Patent classifications
C23C18/32
COATED SUBSTRATE SUPPORT ASSEMBLY FOR SUBSTRATE PROCESSING
Embodiments of the present disclosure generally relate to a substrate support having a two-part surface coating which reduces defect formation and back side metal contamination during substrate processing. A support body includes a body having an upper surface and a two-part coating disposed over the upper surface of the body. The two-part coating includes a first coating layer extending a first radial distance from a center of the body. The first coating layer includes at least one of a metal-containing material or alloy. The two-part coating includes a second coating layer disposed over the first coating layer. The second coating layer extends a second radial distance from the center of the body. The first radial distance is greater than the second radial distance. The second coating layer is non-metal.
Additively manufactured thermoset polymers for metal plating and metal plated parts formed therefrom
A thermoset resin for forming parts to be metal plated includes a vat photopolymerization (VPP) thermoset resin and an etchable phase disposed in the VPP thermoset resin. The etchable phase is etched from a surface of a part formed from the VPP thermoset resin such that a plurality of micro-mechanical locking sites is formed on the surface of the part. The etchable phase is at least one of organic particles, organic resins, inorganic particles, and copolymers of the VPP thermoset resin. For example, the etchable phase can be a polybutadiene phase and/or a mineral such as calcium carbonate.
Additively manufactured thermoset polymers for metal plating and metal plated parts formed therefrom
A thermoset resin for forming parts to be metal plated includes a vat photopolymerization (VPP) thermoset resin and an etchable phase disposed in the VPP thermoset resin. The etchable phase is etched from a surface of a part formed from the VPP thermoset resin such that a plurality of micro-mechanical locking sites is formed on the surface of the part. The etchable phase is at least one of organic particles, organic resins, inorganic particles, and copolymers of the VPP thermoset resin. For example, the etchable phase can be a polybutadiene phase and/or a mineral such as calcium carbonate.
Coatings and coated surfaces including low-surface energy inorganic particles
Articles comprising a substrate and a coating are described. In some examples, the coating is disposed on at least one region of the surface and comprises at least one hydrophobic layer. In some instances, the hydrophobic layer comprises a composite comprising a single metallic element or metallic compound and at least one type of surface-modified inorganic particles to provide a metal-based matrix. In certain examples, the at least one type of surface-modified inorganic particles within the metal-based matrix is embedded within the metal-based matrix and is separate from the single metallic element or metallic compound in the metal-based matrix. Processes for producing the coatings and articles are also described.
SEMI-AROMATIC POLYAMIDE RESIN COMPOSITION AND METAL-PLATED MOLDED BODY
To provide a semi-aromatic polyamide resin composition having excellent good plating properties, low water absorption properties, and solder reflow resistance. A semi-aromatic polyamide resin composition of the present invention comprises: 10 to 200 parts by mass of an inorganic filler (B) and 2 to 30 parts by mass of a toughness improver (C) based on 100 parts by mass of a semi-aromatic polyamide (A), wherein the semi-aromatic polyamide resin (A) satisfies the following (a) and (b): (a) a melting point (Tm) measured by differential scanning calorimetry (DSC) is 280° C. or higher; and (b) an equilibrium water absorption rate at 80° C. and 95% RH is 3.5% or less.
Immersion plating treatments for indium passivation
A bonding structure formed on a substrate includes an indium layer and a passivating nickel plating formed on the indium layer. The nickel plating serves to prevent a reaction involving the indium layer.
Immersion plating treatments for indium passivation
A bonding structure formed on a substrate includes an indium layer and a passivating nickel plating formed on the indium layer. The nickel plating serves to prevent a reaction involving the indium layer.
SUBSTRATE LIQUID PROCESSING APPARATUS AND SUBSTRATE LIQUID PROCESSING METHOD
A technique enabling to heat a plating liquid rapidly while suppressing thermal deterioration of the plating liquid is provided. A substrate liquid processing apparatus includes a substrate holder configured to hold a substrate; a plating liquid supply configured to supply the plating liquid on a processing surface of the substrate; and a heating element, configured to heat at least one of the plating liquid on the processing surface or the substrate, including a heater, a liquid flow path through which pure water flows, and a vapor discharge opening which is connected to the liquid flow path and through which water vapor produced as the pure water is vaporized by heat from the heater is ejected.
METHOD FOR FABRICATING ELECTRONIC COMPONENT
A method for fabricating an electronic component includes the steps of: forming a base material layer of, for example, nickel on a base material of copper, copper alloy, aluminium, or aluminium alloy; applying, as a catalyst, one or more metals selected from the group consisting of gold, palladium, platinum, silver, rhodium, cobalt, tin, copper, iridium, osmium, and ruthenium, on the base material layer; and forming a surface layer by an electroless tin plating bath including trivalent titanium as an reducing agent and pyrophosphate salt as a complexing agent. The surface layer has a thickness of 0.5 μm or more.
ELECTROLESS Co-W PLATING FILM AND ELECTROLESS Co-W PLATING SOLUTION
An object of the present invention is to provide a new electroless plating film which can prevent the diffusion of molten solder to a metal material constituting a conductor. The present invention is an electroless Co—W plating film, wherein content of W is in an amount of 35 to 58 mass % and a thickness of the film is 0.05 μm or more.