The present invention relates to a method of manufacturing a metal-polymer resin bonded body, including: degreasing metal using a degreasing solution; etching the metal using an etching solution; electrolyzing the metal using an electrolyte solution; and performing a polymer resin injection to bond a polymer resin to the metal, wherein the electrolyte solution includes a compound containing distilled water, oxalic acid, sulfuric acid, and carboxylic acid.

The present invention relates to a method of manufacturing a metal-polymer resin bonded body, including: degreasing metal using a degreasing solution; etching the metal using an etching solution; electrolyzing the metal using an electrolyte solution; and performing a polymer resin injection to bond a polymer resin to the metal, wherein the electrolyte solution includes a compound containing distilled water, oxalic acid, sulfuric acid, and carboxylic acid.

An etching solution contains a quaternary ammonium compound as a main component, by which an etching rate for silicon is improved, no adhered substances are formed on an etching surface during etching, and the etching rate does not decrease even after continuous use for a long time. The silicon etching solution contains a phenol compound represented by the following Formula (1), a quaternary ammonium compound, and water, and has a pH of 12.5 or more.

##STR00001## wherein R.sup.1 is a hydrogen atom, a hydroxy group, an alkyl group, an alkoxy group, or an amino group. R.sup.2 is a hydrogen atom, a hydroxy group, an alkoxy group, or an amino group. R.sup.1 and R.sup.2 are not hydrogen atoms at the same time. When R.sup.1 is a hydrogen atom, R.sup.2 is not a hydroxy group. When R.sup.1 is an alkyl group or a hydroxy group, R.sup.2 is not a hydrogen atom.

The hydrophobic and corrosion resistive film of cross-linked poly(hexafluoroisopropyl methacrylate) was prepared by photopolymerization. The starting materials were a monomer of 1,1,1,3,3,3-hexafluoroisopropyl methacrylate, a photoinitiator of hydroxycyclohexyl phenyl ketone, and a cross-linker of poly(ethyleneglycol diacrylate). Photopolymerization was used to start polymerization and to cure the polymer film on an aluminum surface. Drop-casting was used to deposit the fluoropolymer onto an aluminum substrate (AA 3003). The fluoropolymer film has high corrosion protection when measured by potentiodynamic polarization and open circuit potential techniques in an aqueous solution of 3.5% NaCl. Fourier-transform infrared spectroscopy was used to monitor the polymerization process. The dynamic contact angle technique was used to measure the hydrophobicity for the fluorinated polymer coating. Thermal stability of the fluorinated polymer was measured using thermogravimetric analysis. Treatment with strong acid followed by contact angle measurements before and after the treatment confirmed the chemical resistance for the coated aluminum.

Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which a substrate comprising a metal, metal oxide, metal nitride or metal oxynitride layer is contacted with an etch reactant comprising an vapor-phase N-substituted derivative of amine compound. In some embodiments the etch reactant reacts with the substrate surface to form volatile species including metal atoms from the substrate surface. In some embodiments a metal or metal nitride surface is oxidized as part of the ALE cycle. In some embodiments a substrate surface is contacted with a halide as part of the ALE cycle. In some embodiments a substrate surface is contacted with a plasma reactant as part of the ALE cycle.

Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which a substrate comprising a metal, metal oxide, metal nitride or metal oxynitride layer is contacted with an etch reactant comprising an vapor-phase N-substituted derivative of amine compound. In some embodiments the etch reactant reacts with the substrate surface to form volatile species including metal atoms from the substrate surface. In some embodiments a metal or metal nitride surface is oxidized as part of the ALE cycle. In some embodiments a substrate surface is contacted with a halide as part of the ALE cycle. In some embodiments a substrate surface is contacted with a plasma reactant as part of the ALE cycle.

Compositions and methods for etching a nanoscale geometry on a metal or metal alloy surface are disclosed. Such surfaces, when included on an implantable medical device, enhance healing after surgery. When included on a bone contacting medical implant, the nanoscale geometry may enhance osseointegration. When included on a tissue contacting device, the nanoscale geometry may enhance endothelial cell attachment, proliferation, and restoration of a healthy endothelial surface.

A method and a device are provided for removing surface oxides on nodules of a metal powder, before the nodules of the metal powder are used in an industrial process in which the nodules of the metal powder are assembled via a solid route or via a liquid route. In the method and the device, the surface oxides are stripped from the nodules of the metal powder by bringing the nodules of the metal powder into contact with vapour from at least one of: sublimation of a stripping solid material, and sublimation of the stripping solid material followed by a chemical transformation of a product of the sublimation.

A method and a device are provided for removing surface oxides on nodules of a metal powder, before the nodules of the metal powder are used in an industrial process in which the nodules of the metal powder are assembled via a solid route or via a liquid route. In the method and the device, the surface oxides are stripped from the nodules of the metal powder by bringing the nodules of the metal powder into contact with vapour from at least one of: sublimation of a stripping solid material, and sublimation of the stripping solid material followed by a chemical transformation of a product of the sublimation.

The present invention provides a chemical liquid that causes a small variation in a dissolving amount of a first metal-containing substance in a case where the chemical liquid is applied to an object to be treated containing the first metal-containing substance. The present invention also provides a method for treating an object to be treated. The chemical liquid according to an embodiment of the present invention contains water, a hydroxylamine compound selected from the group consisting of hydroxylamine and a hydroxylamine salt, and a specific compound represented by Formula (1).

##STR00001##