A method of finishing a metallic surface includes the steps of: disposing a mask layer onto an initial metallic surface of a substrate, etching at least a portion of the initial metallic surface with an etchant to provide an etched surface, and separating the etchant from the etched surface. The etched surface is smoother than the initial metallic surface. On a depth basis: the etchant etches said at least a portion of the mask layer and said at least a portion of the initial metallic surface at substantially the same rate; and/or the etchant penetrates said at least a portion of the mask layer and etches said at least a portion of the initial metallic surface at substantially the same rate. A substrate finished by the disclosed method and a kit for practicing the method are also disclosed.

A method for removing a metal compound capable of selectively removing an oxide of a metal, a nitride of a metal, or an oxynitride of a metal while suppressing the removal of silicon dioxide, silicon nitride, polysilicon, a simple substance of a metal, or the like. The method includes bringing at least one metal compound selected from oxides of a metal, nitrides of a metal, and oxynitrides of a metal into contact with a treatment liquid to remove it from a treatment object. The metal is at least one selected from tungsten, cobalt, nickel, tantalum, titanium, iron, copper, and molybdenum. The treatment liquid is an aqueous solution containing at least one compound for removal selected from carboxylic acids and salts thereof and contains the compound(s) for removal at a total concentration of 2 mass % or more.

Provided is a treatment liquid for etching a transition metal on a semiconductor wafer, the treatment liquid comprising: (A) a hypohalite ion or periodate ion; and (B) an alkylammonium salt represented by the following Formula (1).

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(wherein a is an integer from 6 to 20, R.sup.1, R.sup.2, and R.sup.3 are independently a hydrogen atom or an alkyl group having carbon number from 1 to 20, and X.sup.− is a bromine-containing ion), and a method of etching a transition metal by bringing the treatment liquid for semiconductor wafers into contact with the transition metal used in a semiconductor formation process.

Treatment solutions and methods for improving adhesion of gold electroplating onto metal surfaces are provided herein. More specifically, the disclosure relates to micro-etching stainless steel surfaces using to remove any organic contamination and chromium oxide formed on the surface, neutralize and strip the surface of any iron content, and repassivate the surface with a thin chromium oxide layer, prior to gold electroplating of the stainless steel surfaces.

Described herein is an etching solution suitable for the selective removal of TiSiN over hafnium oxide from a micro-electronic device, which consists essentially of: water; at least one alkaline ammonium compound selected from the group consisting of ammonium hydroxide, a quaternary ammonium hydroxide, ammonium fluoride, and a quaternary ammonium fluoride; at least one peroxide compound; a water-miscible organic solvent; at least one nitrogen containing compound selected from the group consisting of a C.sub.4-12 alkylamine, a polyalkylenimine, and a polyamine; and optionally at least one chelating agent.

Described herein is an etching solution suitable for the selective removal of TiSiN over hafnium oxide from a micro-electronic device, which consists essentially of: water; at least one alkaline ammonium compound selected from the group consisting of ammonium hydroxide, a quaternary ammonium hydroxide, ammonium fluoride, and a quaternary ammonium fluoride; at least one peroxide compound; a water-miscible organic solvent; at least one nitrogen containing compound selected from the group consisting of a C.sub.4-12 alkylamine, a polyalkylenimine, and a polyamine; and optionally at least one chelating agent.

A negative electrode for a lithium secondary battery including a lithium metal layer and a protective layer including a three-dimensional structural body made of metal and lithium nitride on the lithium metal layer. The protective layer induces uniform ionic conductivity and electrical conductivity on the surface of the negative electrode. A method for manufacturing method a negative electrode for a lithium secondary battery including the steps of forming a metal hydroxide having a three-dimensional structure, forming a metal nitride having a three-dimensional structure by a nitridation reaction of the metal hydroxide of the three-dimensional structure; and transferring the metal nitride having the three-dimensional structure onto a lithium metal layer to form a protective layer. A lithium secondary battery including the negative electrode for a lithium secondary battery.

A negative electrode for a lithium secondary battery including a lithium metal layer and a protective layer including a three-dimensional structural body made of metal and lithium nitride on the lithium metal layer. The protective layer induces uniform ionic conductivity and electrical conductivity on the surface of the negative electrode. A method for manufacturing method a negative electrode for a lithium secondary battery including the steps of forming a metal hydroxide having a three-dimensional structure, forming a metal nitride having a three-dimensional structure by a nitridation reaction of the metal hydroxide of the three-dimensional structure; and transferring the metal nitride having the three-dimensional structure onto a lithium metal layer to form a protective layer. A lithium secondary battery including the negative electrode for a lithium secondary battery.

A substrate processing liquid is used to etch a substrate in which at least either a bottom wall or a side wall forming a trench structure is an etched layer made of metal or a metal compound. The substrate processing liquid includes a chemical liquid containing H.sub.2O.sub.2 molecules or HO.sub.2.sup.− functioning as an etchant for etching the metal, and a complex forming agent containing NH.sub.4.sup.+ and forming a complex with ions of the metal and is adjusted to a pH of 5 or more.

Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which a substrate comprising a metal, metal oxide, metal nitride or metal oxynitride layer is contacted with an etch reactant comprising an vapor-phase N-substituted derivative of amine compound. In some embodiments the etch reactant reacts with the substrate surface to form volatile species including metal atoms from the substrate surface. In some embodiments a metal or metal nitride surface is oxidized as part of the ALE cycle. In some embodiments a substrate surface is contacted with a halide as part of the ALE cycle. In some embodiments a substrate surface is contacted with a plasma reactant as part of the ALE cycle.