A detergent composition for metal product, which contains an amine (component A) represented by a general formula (I), a salt (component B′) of a dicarboxylic acid (component B) represented by a general formula (II): HOOC—R.sup.4—COOH (II) and the amine (component A), a salt (component C′) of a monocarboxylic acid (component C) represented by a general formula (III): R.sup.5—COOH (III) and the amine (component A), a nonionic surfactant (component D) represented by a general formula (IV): R.sup.6—O-{(EO)n/(PO)m}-H (IV), and water (component E) and has a pH of more than 7 and 10 or less. The detergent composition for metal product exhibits excellent detergency and metal corrosion suppressing performance.

The present disclosure relates to removal compositions for at least partially removing post-chemical mechanical polishing (post-CMP) residues from the surface of a microelectronic device. The removal compositions comprise an aqueous base composition and various molybdenum etching inhibitors that reduce the amount of molybdenum removed from the surface of the microelectronic device compared to the aqueous base composition.

The present disclosure relates to removal compositions for at least partially removing post-chemical mechanical polishing (post-CMP) residues from the surface of a microelectronic device. The removal compositions comprise an aqueous base composition and various molybdenum etching inhibitors that reduce the amount of molybdenum removed from the surface of the microelectronic device compared to the aqueous base composition.

A solution is provided comprising a strong base, a corrosion inhibitor, wherein the strong base is an alkali metal hydroxide, wherein the corrosion inhibitor is at least one of an organic acid having a-COOH functional group or an alkali metal salt one of an organic acid having a-COOH functional groups.

The present invention discloses a method and a composition for removing metal sulfide scale present on the surface of a metal, said method comprising: providing a liquid composition comprising: a chelating agent and a counterion component selected from the group consisting of: sodium gluconate; gluconic acid; tetrasodium EDTA; EDTA; propylenediaminetetraacetic acid (PDTA); nitrilotriacetic acid (NTA); N-(2-hydroxyethyl) ethylenediaminetriacetic acid (HEDTA); diethylenetriaminepentaacetic acid (DTPA); hydroxyethyliminodiacetic acid (HEIDA); cyclohexylenediaminetetraacetic acid (CDTA); diphenylaminesulfonic acid (DPAS); ethylenediaminedi(o-hydroxyphenylacetic) acid (EDDHA); glucoheptonic acid; gluconic acid; oxalic acid; malonic acid; succinic acid; glutaric acid; adipic acid; pimelic acid; suberic acid; azelaic acid; sebacic acid; phthalic acid; terephthalic acid; aconitic acid; carballylic acid; trimesic acid; isocitric acid; citric acid; L-glutamic acid-N,N-diacetic acid (GLDA); salts thereof; and mixtures thereof; and an aldehyde; and water exposing a surface contaminated with said metal sulfide scale to the liquid composition; allowing sufficient time of exposure to remove said metal sulfide scale from the contaminated surface and sequestration of the sulfur ions from solution.

The present invention discloses a method and a composition for removing metal sulfide scale present on the surface of a metal, said method comprising: providing a liquid composition comprising: a chelating agent and a counterion component selected from the group consisting of: sodium gluconate; gluconic acid; tetrasodium EDTA; EDTA; propylenediaminetetraacetic acid (PDTA); nitrilotriacetic acid (NTA); N-(2-hydroxyethyl) ethylenediaminetriacetic acid (HEDTA); diethylenetriaminepentaacetic acid (DTPA); hydroxyethyliminodiacetic acid (HEIDA); cyclohexylenediaminetetraacetic acid (CDTA); diphenylaminesulfonic acid (DPAS); ethylenediaminedi(o-hydroxyphenylacetic) acid (EDDHA); glucoheptonic acid; gluconic acid; oxalic acid; malonic acid; succinic acid; glutaric acid; adipic acid; pimelic acid; suberic acid; azelaic acid; sebacic acid; phthalic acid; terephthalic acid; aconitic acid; carballylic acid; trimesic acid; isocitric acid; citric acid; L-glutamic acid-N,N-diacetic acid (GLDA); salts thereof; and mixtures thereof; and an aldehyde; and water exposing a surface contaminated with said metal sulfide scale to the liquid composition; allowing sufficient time of exposure to remove said metal sulfide scale from the contaminated surface and sequestration of the sulfur ions from solution.

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

The invention relates to the field of removing various types of deposits from a surface, specifically to means for cleaning metallic and ceramic surfaces of industrial equipment, and can be used for removing deposits, such as oxides of metals (iron, chromium, nickel, etc.), carbonate and salt deposits, asphaltene-resin-paraffin deposits and deposits of a petroleum nature, and deposits of an organic and biological deposits. The proposed solution for removing various types of deposits contains hydrogen peroxide, complexone, an anti-foaming agent, water-soluble calixarene and water in the following ratio: hydrogen peroxide, a catalyst for decomposing peroxide compounds, an antifoaming agent, complexone, water-soluble calixarene and water in the following quantitative ratio: 2-35% by mass of hydrogen peroxide; 2-20% by mass of a catalyst for decomposing peroxide compounds; 3-10% by mass of complexone; 0.1-5% by mass of surface-active agent; 0.01%-1.0% by mass of anti-foaming agent; 0.01-1% by mass of water-soluble calixarene, with the remainder being water. The technical result is an increase in the effectiveness of action of a solution (degree of cleaning) for cleaning surfaces soiled with deposits having a high content of organic substances, while simultaneously extending the field of use of said solution.

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.