Patent classifications
C25D3/32
Tin plating solution, tin plating equipment, and method for fabricating semiconductor device using the tin plating solution
A tin plating solution and a method for fabricating a semiconductor device are provided. The tin plating solution comprises tin ions supplied from a soluble tin electrode, an aliphatic sulfonic acid having a carbon number of 1 to 10, an anti-oxidant, a wetting agent, and a grain refiner that is an aromatic carbonyl compound.
Sn PLATING STEEL SHEET, CHEMICAL TREATMENT STEEL SHEET, AND METHOD OF MANUFACTURING THE SAME
The chemical treatment steel sheet includes a steel sheet, a mat finished Sn plating layer that is provided as an upper layer of the steel sheet and is formed of a β-Sn, and a chemical treatment layer that is provided as an upper layer of the Sn plating layer. The Sn plating layer contains the β-Sn of 0.10 g/m.sup.2 to 20.0 g/m.sup.2 in terms of an amount of metal Sn. A crystal orientation index of a (100) plane group of the Sn plating layer is higher than crystal orientation indexes of other crystal orientation planes. The chemical treatment layer includes a Zr compound containing Zr of 0.50 mg/m.sup.2 to 50.0 mg/m.sup.2 in terms of an amount of metal Zr, and a phosphate compound.
Sn PLATING STEEL SHEET, CHEMICAL TREATMENT STEEL SHEET, AND METHOD OF MANUFACTURING THE SAME
The chemical treatment steel sheet includes a steel sheet, a mat finished Sn plating layer that is provided as an upper layer of the steel sheet and is formed of a β-Sn, and a chemical treatment layer that is provided as an upper layer of the Sn plating layer. The Sn plating layer contains the β-Sn of 0.10 g/m.sup.2 to 20.0 g/m.sup.2 in terms of an amount of metal Sn. A crystal orientation index of a (100) plane group of the Sn plating layer is higher than crystal orientation indexes of other crystal orientation planes. The chemical treatment layer includes a Zr compound containing Zr of 0.50 mg/m.sup.2 to 50.0 mg/m.sup.2 in terms of an amount of metal Zr, and a phosphate compound.
Sn-based plated steel sheet
To provide a Sn-based plated steel sheet capable of exhibiting superior corrosion resistance, yellowing resistance, coating film adhesiveness, and sulphide stain resistance without using a chromate film. A Sn-based plated steel sheet of the present invention includes: a steel sheet; a Sn-based plating layer located on at least one surface of the steel sheet; and a coating layer located on the Sn-based plating layer, wherein the Sn-based plating layer contains 1.0 g/m.sup.2 to 15.0 g/m.sup.2 of Sn per side in terms of metal Sn, the coating layer contains zirconium oxide, and a content of the zirconium oxide is 1.0 mg/m.sup.2 to 10.0 mg/m.sup.2 per side in terms of metal Zr, the zirconium oxide includes zirconium oxide with an amorphous structure, and a crystalline layer whose main component is zirconium oxide with a crystalline structure is present on an upper layer of the zirconium oxide with the amorphous structure.
Porous Materials
A porous membrane material comprising a porous membrane substrate coated with a thin, uniform coating of a metal or metal alloy. The membrane material can have high electrical conductivity. The membrane material can exhibit a very high ratio of electrical conductivity to thermal conductivity. The porous membrane substrate may be removed to form the membrane.
Porous Materials
A porous membrane material comprising a porous membrane substrate coated with a thin, uniform coating of a metal or metal alloy. The membrane material can have high electrical conductivity. The membrane material can exhibit a very high ratio of electrical conductivity to thermal conductivity. The porous membrane substrate may be removed to form the membrane.
Additives for electroplating baths
Reaction products of halogenated pyrimidines and nucleophilic linker units are included in metal electroplating baths to provide good throwing power. The electroplating baths can be used to plate metal, such as copper, tin and alloys thereof on printed circuit boards and semiconductors and fill through-holes and vias.
Additives for electroplating baths
Reaction products of halogenated pyrimidines and nucleophilic linker units are included in metal electroplating baths to provide good throwing power. The electroplating baths can be used to plate metal, such as copper, tin and alloys thereof on printed circuit boards and semiconductors and fill through-holes and vias.
Composition for tin or tin alloy electroplating comprising suppressing agent
The present invention provides an aqueous composition comprising tin ions and at least one compound of formula I wherein X.sub.1 is selected from a linear or branched C.sub.1-C.sub.12 alkanediyl, which may optionally be interrupted by O or S or a C.sub.5 to C.sub.12 aromatic moiety, R.sup.11 is a copolymer of ethylene oxide and a further C.sub.3 to C.sub.6 alkylene oxide, wherein the content of ethylene oxide is from 5 to 30% by weight, R.sup.12 is selected from H, R.sup.11, R.sup.40, R.sup.13, R.sup.14, are (a) independently selected from H, R.sup.11, R.sup.40, or (b) may together form a divalent group X.sup.13; X.sup.13 is selected from a linear or branched C.sub.1-C.sub.12 alkanediyl, which may optionally be interrupted by O, S or NR.sup.43; R.sup.40 is H or a linear or branched C.sub.1-C.sub.20 alkyl, R.sup.43 is selected from H, R.sup.11 and a linear or branched C.sub.1-C.sub.20 alkyl. ##STR00001##
Composition for tin or tin alloy electroplating comprising suppressing agent
The present invention provides an aqueous composition comprising tin ions and at least one compound of formula I wherein X.sub.1 is selected from a linear or branched C.sub.1-C.sub.12 alkanediyl, which may optionally be interrupted by O or S or a C.sub.5 to C.sub.12 aromatic moiety, R.sup.11 is a copolymer of ethylene oxide and a further C.sub.3 to C.sub.6 alkylene oxide, wherein the content of ethylene oxide is from 5 to 30% by weight, R.sup.12 is selected from H, R.sup.11, R.sup.40, R.sup.13, R.sup.14, are (a) independently selected from H, R.sup.11, R.sup.40, or (b) may together form a divalent group X.sup.13; X.sup.13 is selected from a linear or branched C.sub.1-C.sub.12 alkanediyl, which may optionally be interrupted by O, S or NR.sup.43; R.sup.40 is H or a linear or branched C.sub.1-C.sub.20 alkyl, R.sup.43 is selected from H, R.sup.11 and a linear or branched C.sub.1-C.sub.20 alkyl. ##STR00001##