The present invention provides a method of tin-plating a copper alloy for electric or electronic parts and automobile parts which has excellent insertion force, heat-resistant peeling, and solderability, and a tin-plating material of a copper alloy manufactured therefrom.

The present invention provides a method of tin-plating a copper alloy for electric or electronic parts and automobile parts which has excellent insertion force, heat-resistant peeling, and solderability, and a tin-plating material of a copper alloy manufactured therefrom.

A plating solution including a soluble salt containing at least a stannous salt; an acid selected from organic acid and inorganic acid or a salt thereof; and an additive containing a specific ammonium salt is provided.

A plating solution including a soluble salt containing at least a stannous salt; an acid selected from organic acid and inorganic acid or a salt thereof; and an additive containing a specific ammonium salt is provided.

Systems for cleaning electroplating system components may include an electroplating apparatus including a plating bath vessel. The electroplating apparatus may include a rinsing frame extending above the plating bath vessel. The rinsing frame may include a rim extending circumferentially about an upper surface of the plating bath vessel and defining a rinsing channel between the rim and the upper surface of the plating bath vessel. The electroplating apparatus may also include a rinsing assembly including a splash guard that is translatable from a recessed first position to a second position extending at least partially across an access to the plating bath vessel. The rinsing assembly may also include a fluid nozzle extending from the rinsing frame.

The surface of a substrate made of stainless-steel foil is coated with a Sn alloy layer, with a strike layer in between. The coverage of the strike layer on the substrate is 2% to 70%.

The surface of a substrate made of stainless-steel foil is coated with a Sn alloy layer, with a strike layer in between. The coverage of the strike layer on the substrate is 2% to 70%.

The Sn-based alloy plated steel sheet of this disclosure includes: a steel sheet; a composite plating layer formed on at least one side of the steel sheet and including an FeNiSn alloy layer and an island-shaped Sn layer located on the FeNiSn alloy layer; and a coating layer formed on the surface of the composite plating layer and containing zirconium oxide and tin oxide, and the composite plating layer contains a predetermined amount of Ni and a predetermined amount of Sn, a content of the zirconium oxide in the coating layer is from 0.2 mg/m.sup.2 to 50 mg/m.sup.2 in terms of metal Zr amount, and a peak position of binding energy of Sn3d.sub.5/2 according to X-ray photoelectron spectroscopy of the tin oxide in the coating layer is 1.6 eV or higher than a peak position of binding energy of the metal Sn.

The Sn-based alloy plated steel sheet of this disclosure includes: a steel sheet; a composite plating layer formed on at least one side of the steel sheet and including an FeNiSn alloy layer and an island-shaped Sn layer located on the FeNiSn alloy layer; and a coating layer formed on the surface of the composite plating layer and containing zirconium oxide and tin oxide, and the composite plating layer contains a predetermined amount of Ni and a predetermined amount of Sn, a content of the zirconium oxide in the coating layer is from 0.2 mg/m.sup.2 to 50 mg/m.sup.2 in terms of metal Zr amount, and a peak position of binding energy of Sn3d.sub.5/2 according to X-ray photoelectron spectroscopy of the tin oxide in the coating layer is 1.6 eV or higher than a peak position of binding energy of the metal Sn.

A microelectronic device includes a reflow structure. The reflow structure has a copper-containing member and a solder member, and a barrier layer between them. The barrier layer has metal grains, with a diffusion barrier filler between the metal grains. The metal grains include at least a first metal and a second metal, each selected from nickel, cobalt, lanthanum, and cerium, with each having a concentration in the metal grains of at least 10 weight percent. The diffusion barrier filler includes at least a third metal, selected from tungsten and molybdenum. A combined concentration of tungsten and molybdenum in the diffusion barrier filler is higher than in the metal grains to provide a desired resistance to diffusion of copper. The barrier layer includes 2 weight percent to 15 weight percent of the combined concentration of tungsten, and molybdenum. A bump bond structure and a lead frame package are disclosed.