The present disclosure relates to a method of manufacturing a transferable lamella comprising interconnected nanostructures, the method comprising the steps of: a) providing a substrate such as a planar substrate; b) forming at least one superstructure on the substrate, said superstructure comprising a plurality of elongated nanostructures (formed e.g. by growth, deposition, and/or etching); wherein the elongated nanostructures are formed such that at least two of said nanostructures are conductively interconnected, and/or wherein at least a first layer is grown or deposited to conductively interconnect or insulate at least a part of the elongated nanostructures; c) encapsulating at least a portion of said superstructure in an encapsulating material, said portion comprising at least two interconnected nanostructures; and d) cutting the encapsulating material in a direction that intersects at least two interconnected nanostructures, thereby manufacturing a transferable lamella comprising interconnected nanostructures. The present disclosure further relates to an electronic device manufactured from one or more of the lamellas provided by the method.

The present disclosure relates to a method of manufacturing a transferable lamella comprising interconnected nanostructures, the method comprising the steps of: a) providing a substrate such as a planar substrate; b) forming at least one superstructure on the substrate, said superstructure comprising a plurality of elongated nanostructures (formed e.g. by growth, deposition, and/or etching); wherein the elongated nanostructures are formed such that at least two of said nanostructures are conductively interconnected, and/or wherein at least a first layer is grown or deposited to conductively interconnect or insulate at least a part of the elongated nanostructures; c) encapsulating at least a portion of said superstructure in an encapsulating material, said portion comprising at least two interconnected nanostructures; and d) cutting the encapsulating material in a direction that intersects at least two interconnected nanostructures, thereby manufacturing a transferable lamella comprising interconnected nanostructures. The present disclosure further relates to an electronic device manufactured from one or more of the lamellas provided by the method.

The present disclosure relates to a device and method for forming efficient quantum devices, in particular quantum devices that have not been contaminated in ex-situ processes. In particular the presently disclosed method can be applied for manufacturing of a Josephson junction which is an element in a tunable superconducting qubit. One embodiment relates to a method for in-situ production of a barrier/gap in the surface layer(s) of an elongated nanostructure, the method comprising the steps of providing at least one elongated device nanostructure on a substrate in a vacuum chamber having at least one deposition source, providing at least one elongated shadow nanostructure in said vacuum chamber, and depositing at least a first facet layer on at least a part of the device nanostructure(s) and the shadow nanostructure(s) by means of said deposition source, wherein the deposition source, the device nanostructure and the shadow nanostructure during deposition are arranged such that the shadow nanostructure covers and forms a shadow mask on at least a part of the device nanostructure thereby forming a gap in the first facet layer deposited on the device nanostructure.

Methods for producing nanostructures from copper-based catalysts on porous substrates, particularly silicon nanowires on carbon-based substrates for use as battery active materials, are provided. Related compositions are also described. In addition, novel methods for production of copper-based catalyst particles are provided. Methods for producing nanostructures from catalyst particles that comprise a gold shell and a core that does not include gold are also provided.

Methods for producing nanostructures from copper-based catalysts on porous substrates, particularly silicon nanowires on carbon-based substrates for use as battery active materials, are provided. Related compositions are also described. In addition, novel methods for production of copper-based catalyst particles are provided. Methods for producing nanostructures from catalyst particles that comprise a gold shell and a core that does not include gold are also provided.

The present invention refers to a method for preparing a network of nanowires; to a network of nanowires obtainable by said method; to a nonwoven material comprising the network, to an electrode comprising the network, to the use of the network of nanowires and to the use of the nonwoven material.

The present invention refers to a method for preparing a network of nanowires; to a network of nanowires obtainable by said method; to a nonwoven material comprising the network, to an electrode comprising the network, to the use of the network of nanowires and to the use of the nonwoven material.

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second input fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second input fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.

A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on flexible substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films are nearly to entirely free of metal impurities and have widespread application in the manufacture and benefit of photovoltaic and display technologies.