A method includes a graphene precursor formation process of: heating a SiC substrate to sublimate Si atoms in a Si surface of the SiC substrate so that a graphene precursor is formed; and stopping the heating before the graphene precursor is covered with graphene. A SiC substrate to be treated in the graphene precursor formation process is provided with a step including a plurality of molecular layers. The step has a stepped structure in which a molecular layer whose C atom has two dangling bonds is disposed closer to the surface than a molecular layer whose C atom has one dangling bond.

In a state in which a SiC container (3) of a material including polycrystalline SiC is housed in a TaC container (2) of a material including TaC and in which an underlying substrate (40) is housed in the SiC container (3), the TaC container (2) is heated in an environment where a temperature gradient occurs in such a manner that inside of the TaC container (2) is at a Si vapor pressure. Consequently, C atoms sublimated by etching of the inner surface of the SiC container (3) are bonded to Si atoms in an atmosphere so that an epitaxial layer (41) of single crystalline 3C-SiC thereby grows on the underlying substrate (40).

A deposition system is disclosed that allows for growth of inclined c-axis piezoelectric material structures. The system integrates various sputtering modules to yield high quality films and is designed to optimize throughput lending it to a high-volume in manufacturing environment. The system includes two or more process modules including an off-axis module constructed to deposit material at an inclined c-axis and a longitudinal module constructed to deposit material at normal incidence; a central wafer transfer unit including a load lock, a vacuum chamber, and a robot disposed within the vacuum chamber and constructed to transfer a wafer substrate between the central wafer transfer unit and the two or more process modules; and a control unit operatively connected to the robot.

A method of single crystal growth includes disposing a polycrystalline source material in a chamber of a single crystal growth apparatus, disposing a seed layer in the chamber of the single crystal growth apparatus, wherein the seed layer is fixed below a lid of the single crystal growth apparatus, heating the polycrystalline source material by a heater of the single crystal growth apparatus to deposit a semiconductor material layer on the seed layer, and after depositing the semiconductor material layer, providing a coolant gas at a backside of the lid to cool down the seed layer and the semiconductor material layer.

An object of the present invention is to provide a novel technique capable of manufacturing a large-diameter AlN substrate.

The present invention is a method for manufacturing an AlN substrate, including a crystal growth step S30 of forming an AlN layer 20 on a SiC underlying substrate 10 having through holes 11. In addition, the present invention is a method for forming an AlN layer including the through hole formation step S20 of forming the through holes 11 in the SiC underlying substrate 10 before forming the AlN layer 20 on the SiC underlying substrate 10.

A silicon carbide seed crystal and method of manufacturing the same, and method of manufacturing silicon carbide ingot are provided. The silicon carbide seed crystal has a silicon surface and a carbon surface opposite to the silicon surface. A difference D between a basal plane dislocation density BPD1 of the silicon surface BPD1 and a basal plane dislocation density BPD2 of the carbon surface satisfies the following formula (1):

D=(BPD1−BPD2)/BPD1≤25%  (1).

A method for manufacturing a SiC single crystal reducing crystallinity degradation at a wafer central portion wherein a growth container surrounds a heat-insulating material with a top temperature measurement hole, a seed crystal substrate at an upper portion inside the container, and a silicon carbide raw material at a lower portion of the container and sublimated to grow a SiC single crystal on the seed crystal substrate. A center position hole deviates from a center position of the seed crystal substrate and moves to the periphery side of the center of the seed crystal substrate. A SiC single crystal substrate surface is tilted by a {0001} plane and used as the seed crystal substrate. The SiC single crystal grows with the seed crystal substrate directed to a normal vector of the seed crystal substrate basal plane parallel to the main surface and identical to the hole in a cross-sectional view.

A silicon carbide seed crystal and method of manufacturing the same, and method of manufacturing silicon carbide ingot are provided. The silicon carbide seed crystal has a silicon surface and a carbon surface opposite to the silicon surface. A difference D between a basal plane dislocation density BPD1 of the silicon surface BPD1 and a basal plane dislocation density BPD2 of the carbon surface satisfies the following formula (1):
D=(BPD1−BPD2)/BPD1≤25%  (1).

Methods and systems of heating a substrate in a vacuum deposition process include a resistive heater having a resistive heating element. Radiative heat emitted from the resistive heating element has a wavelength in a mid-infrared band from 5 μm to 40 μm that corresponds to a phonon absorption band of the substrate. The substrate comprises a wide bandgap semiconducting material and has an uncoated surface and a deposition surface opposite the uncoated surface. The resistive heater and the substrate are positioned in a vacuum deposition chamber. The uncoated surface of the substrate is spaced apart from and faces the resistive heater. The uncoated surface of the substrate is directly heated by absorbing the radiative heat.

Methods for depositing films using crystals or powders as a source material are provided. The films can have a thickness of at least 100 nanometers and can be inorganic (e.g., inorganic perovskite) films, and the source material can be the same composition and/or stoichiometry as the deposited film. The deposition process can be a single-step thermal process using a close space sublimation (CSS) process.