A method of manufacturing silicon carbide seed crystal and method of manufacturing silicon carbide ingot are provided. The silicon carbide seed crystal has a silicon surface and a carbon surface opposite to the silicon surface. A difference D between a basal plane dislocation density BPD1 of the silicon surface BPD1 and a basal plane dislocation density BPD2 of the carbon surface satisfies the following formula (1):

D=(BPD1−BPD2)/BPD1≤25%  (1).

Disclosed is a SiC container (3) in which Si vapor and C vapor are generated in the internal space during the heat treatment. The SiC container may be heated in Si atmosphere to grow an epitaxial layer of single crystalline SiC on the underlying substrate housed in the internal space. The SiC container may be heated in a TaC container of a material including TaC supplemented with a source of Si to grow an epitaxial layer of single crystalline SiC on the underlying substrate housed in the internal space.

A manufacturing device of SiC semiconductor substrates includes a SiC container (3) in which Si vapor and C vapor are generated in the internal space during the heat treatment, and a high-temperature vacuum furnace (11) capable of heating the SiC container in Si atmosphere. The device can further be configured such that the SiC container is housed in Si atmosphere and an underlying substrate (40) is housed in the SiC container, and the high-temperature vacuum furnace is capable of heating with a temperature gradient.

The purpose of the present invention is to provide a novel method and apparatus of manufacturing a semiconductor substrate. Achieved are a method of manufacturing a semiconductor substrate and a manufacturing apparatus therefor, the method comprising: an installation step for installing a plurality of objects to be processed having semiconductor substrates in a stack; and a heating step for heating each of the plurality of objects to be processed such that a temperature gradient is formed in the thickness direction of the semiconductor substrate.

A method of operating a reactor system to provide wafer temperature gradient control is provided. The method includes operating a center temperature sensor, a middle temperature sensor, and an edge temperature sensor to sense a temperature of a center zone of a wafer on a susceptor in reaction chamber of the reactor system, to sense a temperature of a middle zone of the wafer, and to sense a temperature of an edge zone of the wafer. The temperatures of the center, middle, and edge zones of the wafer are processed with a controller to generate control signals based on a predefined temperature gradient for the wafer. First, second, and third sets of heater lamps are operated based on the temperature of the center, middle, and edge zones to heat the center, the middle, and the edge zone of the wafer. Reactor systems are also described.

Systems, methods, and devices of the various embodiments may provide a mechanism to enable the growth of a rhombohedral epitaxy at a lower substrate temperature by energizing the atoms in flux, thereby reducing the substrate temperature to a moderate level. In various embodiments, sufficiently energized atoms provide the essential energy needed for the rhombohedral epitaxy process which deforms the original cubic crystalline structure approximately into a rhombohedron by physically aligning the crystal structure of both materials at a lower substrate temperature.

A method and a system for film deposition, the system comprising a substrate and a negatively biased target, the target being mounted on a magnetron sputtering cathode and located at a distance from the substrate, wherein a laser beam from a pulsed laser is focused on the target, thereby triggering a magnetron plasma or ejecting vaporized and ionized material from the target in an existing magnetron plasma, the magnetron plasma sputtering material from the target depositing on the substrate.

The reaction chamber (100A) is used for a reactor for the deposition of semiconductor material on a substrate (62); it extends in a longitudinal direction and comprises a reaction and deposition zone (10) which extends in the longitudinal direction; this zone (10) is defined by susceptor elements (21A, 21B, 21C, 22A, 22B, 31, 32) adapted to be heated by electromagnetic induction; a first susceptor element (21A, 21B, 21C, 22A, 22B) is opposite to a substrate support element (61) of the chamber and has a hole (20) which extends in the longitudinal direction along its whole length; the first susceptor element (21A, 21B, 21C, 22A, 22B) has a non-uniform cross section that depends on its longitudinal position.

The disclosure provides a silicon carbide seed crystal and a method of manufacturing a silicon carbide ingot. The silicon carbide seed crystal has a silicon surface and a carbon surface opposite to the silicon surface. A difference D between a basal plane dislocation density BPD1 of the silicon surface and a basal plane dislocation density BPD2 of the carbon surface satisfies the following formula (1), a local thickness variation (LTV) of the silicon carbide seed crystal is 2.5 μm or less, and a stacking fault (SF) density of the silicon carbide seed crystal is 10 EA/cm.sup.2 or less:

D=(BPD1−BPD2)/BPD1≤25%  (1).

A method for manufacturing a SiC single crystal having a growth container surrounded by a heat-insulating material, a seed crystal substrate disposed inside a top at a center of the container, a silicon carbide raw material disposed at a bottom of the container to sublimate and grow a SiC crystal to allow a center of the hole to deviate from a center position of the seed substrate to a position on a periphery side, a SiC substrate having a main surface tilted from a {0001} plane wherein a basal plane is used and grown with the seed substrate so that a direction of a component of a normal vector of the basal plane of the seed substrate parallel to the main surface and an eccentric direction of the hole are opposite directions in a cross-sectional view including the center of the seed substrate and the center of the hole.