A laser activated luminescence system is provided. Another aspect pertains to a system employing a plasma assisted vapor deposition reactor which creates diamond layers on a substrate, in combination with a laser system to at least photoactivate and anneal the diamond layers. Yet another aspect of the present system uses a laser to assist with placement of color centers, such as nitrogen vacancy centers, in diamond. The present method uses lasers to manufacture more than two activated nitrogen vacancy center nodes in a diamond substrate, with nanometer spatial resolution and at a predetermined depth.

An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10.sup.−5 Å or less is observed.

A method of manufacturing a group III nitride crystal includes: preparing a seed substrate; causing surface roughness on the surface of the seed substrate; and supplying a group III element oxide gas and a nitrogen element-containing gas to grow a group III nitride crystal on the seed substrate.

A method for forming a laterally-grown group III metal nitride crystal includes providing a substrate, the substrate including one of sapphire, silicon carbide, gallium arsenide, silicon, germanium, a silicon-germanium alloy, MgAl.sub.2O.sub.4 spinel, ZnO, ZrB.sub.2, BP, InP, AlON, ScAlMgO.sub.4, YFeZnO.sub.4, MgO, Fe.sub.2NiO.sub.4, LiGa.sub.5O.sub.8, Na.sub.2MoO.sub.4, Na.sub.2WO.sub.4, In.sub.2CdO.sub.4, lithium aluminate (LiAlO.sub.2), LiGaO.sub.2, Ca.sub.8La.sub.2(PO.sub.4).sub.6O.sub.2, gallium nitride, or aluminum nitride (AlN), forming a pattern on the substrate, the pattern comprising growth centers having a minimum dimension between 1 micrometer and 100 micrometers, and being characterized by at least one pitch dimension between 20 micrometers and 5 millimeters, growing a group III metal nitride from the pattern of growth centers vertically and laterally, and removing the laterally-grown group III metal nitride layer from the substrate. A laterally-grown group III metal nitride layer coalesces, leaving an air gap between the laterally-grown group III metal nitride layer and the substrate or a mask thereupon.

An object of the present invention is to provide a novel technology capable of achieving high-quality SiC seed crystal, SiC ingot, SiC wafer and SiC wafer with an epitaxial film. The present invention, which solves the above object, is a method for producing a SiC seed crystal for growth of a SiC ingot, the method including a heat treatment step of heat-treating a SiC single crystal in an atmosphere containing Si element and C element. As described above, by heat-treating the SiC single crystal in an atmosphere containing the Si element and the C element, it is possible to produce a high-quality SiC seed crystal in which strain and crystal defects are suppressed.

Disclosed herein methods of forming an Al—Ga containing film comprising: a) exposing a substrate comprising a β-Ga.sub.2O.sub.3, wherein the substrate has a (100) or (−201) orientation, to a vapor phase comprising an aluminum precursor and a gallium precursor; and b) forming a β-(Al.sub.xGa.sub.1-x).sub.2O.sub.3 thin film by a chemical vapor deposition at predetermined conditions and wherein x is 0.01≤x≤0.7. Also disclosed herein are devices comprising the inventive films.

Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a SORI value of 2.5 μm or less, as measured with the back surface of the indium phosphide substrate facing upward.

Generally, examples described herein relate to methods and semiconductor processing systems for anisotropically epitaxially growing a material on a silicon germanium (SiGe) surface. In an example, a surface of silicon germanium is formed on a substrate. Epitaxial silicon germanium is epitaxially grown on the surface of silicon germanium. A first growth rate of the epitaxial silicon germanium is in a first direction perpendicular to the surface of silicon germanium, and a second growth rate of the epitaxial silicon germanium is in a second direction perpendicular to the first direction. The first growth rate is at least 5 times greater than the second growth rate.

A laminated structure includes a crystalline substrate and a crystalline oxide film containing gallium as a main component and having a β-gallia structure, wherein the crystalline substrate is a crystalline substrate containing lithium tantalate as a main component. This provides an inexpensive laminated structure having a thermally stable crystalline oxide film.

A transparent display includes a display including a transparent substrate and a patterned diamond layer formed on the transparent substrate to at least in part define a diamond waveguide. At least two electronic devices can be connected by the diamond waveguide, and can include a sensor, a transducer, or electronic circuitry, including communication, control, or data processing electronic circuitry.