A method of producing a crystalline material is provided that may include providing a crystal growth apparatus comprising a chamber, a hot zone, and a muffle. The hot zone may be disposed within the chamber and include at least one heating system, at least one heat removal system, and a crucible containing feedstock. Additionally, the method may include providing a muffle that surrounds at least two sides of the crucible to ensure uniform temperature distribution through the feedstock during crystal growth to allow the crystalline material to be grown with a square or rectangular shaped cross section.

A method of forming crystalline sheets using a Horizontal Ribbon Growth process, where the sheet of material formed in the process is withdrawn from a crucible in a specified manner to reduce instabilities in the process and to regulate crystal growth dynamics.

A method of forming crystalline sheets using a Horizontal Ribbon Growth process, where the sheet of material formed in the process is withdrawn from a crucible in a specified manner to reduce instabilities in the process and to regulate crystal growth dynamics.

A method for manufacturing a sapphire single-crystal, including melting alumina and/or sapphire in a crucible, and bringing the molten alumina and/or sapphire in contact with a monocrystalline sapphire seed to make the molten alumina and/or sapphire crystallise progressively according to a growth direction to form the sapphire single-crystal. The monocrystalline sapphire seed has a rhombohedral crystallographic structure defining three crystallographic axes [A], [C] and [M] perpendicular to each other and respectively perpendicular to the crystallographic planes. The monocrystalline sapphire seed is a plate delimited by two planar faces which extend parallel to and at a distance from each other, is obtained from an initial sapphire single-crystal which is cut so that one of the crystallographic axes of the monocrystalline sapphire plate forms with a normal to the planar faces of the monocrystalline sapphire plate an angle whose value is comprised between 5 and 85°.

A method for manufacturing a sapphire single-crystal, including melting alumina and/or sapphire in a crucible, and bringing the molten alumina and/or sapphire in contact with a monocrystalline sapphire seed to make the molten alumina and/or sapphire crystallise progressively according to a growth direction to form the sapphire single-crystal. The monocrystalline sapphire seed has a rhombohedral crystallographic structure defining three crystallographic axes [A], [C] and [M] perpendicular to each other and respectively perpendicular to the crystallographic planes. The monocrystalline sapphire seed is a plate delimited by two planar faces which extend parallel to and at a distance from each other, is obtained from an initial sapphire single-crystal which is cut so that one of the crystallographic axes of the monocrystalline sapphire plate forms with a normal to the planar faces of the monocrystalline sapphire plate an angle whose value is comprised between 5 and 85°.

A crucible device includes a heating chamber, at least a first crucible in which a first crystal is growable, and at least a second crucible in which a second crystal is growable. The first crucible and the second crucible are arranged within the heating chamber spaced apart from each other along a horizontal and vertical and any orientational direction. The crucible device further comprises a heating system arranged within the heating chamber, wherein the heating system is configured for adjusting a temperature along the horizontal and vertical and any orientational directions.

According to the disclosed embodiments, an advanced crucible support system is described that allows for greater heat flow to and from the bottom of a crucible, preferably while also preventing excessive heat from reaching a heat exchanger. In particular, a support base is described that includes one or more vents enabling improved heat flow throughout the system. Also, according to one or more additional embodiments, the functionality of the crucible support is adapted to be leveraged by a crucible manipulating device. For example, the support plate may have a plurality of slots for insertion of a “lifting arm”, such that the entire support plate assembly, as well as the crucible itself while on the support assembly, may be lifted and transported as a single unit.

According to the disclosed embodiments, an advanced crucible support system is described that allows for greater heat flow to and from the bottom of a crucible, preferably while also preventing excessive heat from reaching a heat exchanger. In particular, a support base is described that includes one or more vents enabling improved heat flow throughout the system. Also, according to one or more additional embodiments, the functionality of the crucible support is adapted to be leveraged by a crucible manipulating device. For example, the support plate may have a plurality of slots for insertion of a “lifting arm”, such that the entire support plate assembly, as well as the crucible itself while on the support assembly, may be lifted and transported as a single unit.

A method and apparatus for measuring a melt back of a seed in a boule are provided. The method includes lifting a boule once it has been produced using an actuating device onto a support table to automatically manipulate the boule from a furnace to the support table. The melt back of the seed is then automatically measured using a vision system that is installed on an imaging device disposed below the boule.

A method and apparatus for measuring a melt back of a seed in a boule are provided. The method includes lifting a boule once it has been produced using an actuating device onto a support table to automatically manipulate the boule from a furnace to the support table. The melt back of the seed is then automatically measured using a vision system that is installed on an imaging device disposed below the boule.