A ScAlMgO.sub.4 monocrystalline substrate that is highly cleavable and that does not easily cause cracking in the GaN film id grown on the substrate and a method for manufacturing such a ScAlMgO.sub.4 monocrystalline substrate are provided. The ScAlMgO.sub.4 monocrystalline substrate has a crystal oxygen concentration of 57 atom % or less as measured by inductively coupled plasma atomic emission spectroscopy analysis.

Disclosed is a method of manufacturing an epitaxy oxide thin film of enhanced crystalline quality, and an epitaxy oxide thin film manufactured thereby according to the present invention. With respect to the manufacturing method of the epitaxy oxide thin film, which epitaxially grows an orientation film with an oxide capable of being oriented to (001), (110), and (111) on a single crystal Si substrate, because time required for raising a temperature of the orientation film up to an annealing temperature at room temperature is extremely minimized, thermal stress arising from the large difference in thermal expansion coefficients between the substrate and the orientation film is controlled, so crystalline quality of the epitaxy oxide thin film can be enhanced. Moreover, various epitaxial functional oxides are integrated into the thin film of enhanced crystalline quality so that a novel electronic device can be embodied.

Disclosed is a method of manufacturing an epitaxy oxide thin film of enhanced crystalline quality, and an epitaxy oxide thin film manufactured thereby according to the present invention. With respect to the manufacturing method of the epitaxy oxide thin film, which epitaxially grows an orientation film with an oxide capable of being oriented to (001), (110), and (111) on a single crystal Si substrate, because time required for raising a temperature of the orientation film up to an annealing temperature at room temperature is extremely minimized, thermal stress arising from the large difference in thermal expansion coefficients between the substrate and the orientation film is controlled, so crystalline quality of the epitaxy oxide thin film can be enhanced. Moreover, various epitaxial functional oxides are integrated into the thin film of enhanced crystalline quality so that a novel electronic device can be embodied.

A single-crystal-type multi-element positive electrode material, and a preparation method therefor and an application thereof.

Disclosed is a (K,Na)NbO.sub.3 (abbreviated by “KNN”)-based single crystal ceramic. The KNN-based single crystal ceramic according to the present disclosure is formulated by (K.sub.0.5−x/2Na.sub.0.5−x/2−y□.sub.y/2M.sub.x+y/2)Nb.sub.1−x/3+yO.sub.3, wherein M indicates a metal having a different valence from Na, and □ indicates a metal vacancy. The above formulated KNN-based single crystal ceramic allows compensating for the volatilization of Na in a growing grain due to the addition of M.sup.2+ ions, and substituting M.sup.2+ ions for Na.sup.+ ions to form metal vacancies, thereby making possible the single crystal growth.

Disclosed is a (K,Na)NbO.sub.3 (abbreviated by “KNN”)-based single crystal ceramic. The KNN-based single crystal ceramic according to the present disclosure is formulated by (K.sub.0.5−x/2Na.sub.0.5−x/2−y□.sub.y/2M.sub.x+y/2)Nb.sub.1−x/3+yO.sub.3, wherein M indicates a metal having a different valence from Na, and □ indicates a metal vacancy. The above formulated KNN-based single crystal ceramic allows compensating for the volatilization of Na in a growing grain due to the addition of M.sup.2+ ions, and substituting M.sup.2+ ions for Na.sup.+ ions to form metal vacancies, thereby making possible the single crystal growth.

A superconducting article includes a substrate and a superconducting metal oxide film formed on the substrate. The metal oxide film including ions of an alkali metal, ions of a transition metal, and ions of an alkaline earth metal or a rare earth metal. For instance, the metal oxide film can include Rb ions, La ions, and Cu ions. The superconducting metal oxide film can have a critical temperature for onset of superconductivity of greater than 250 K, e.g., greater than room temperature.

A superconducting article includes a substrate and a superconducting metal oxide film formed on the substrate. The metal oxide film including ions of an alkali metal, ions of a transition metal, and ions of an alkaline earth metal or a rare earth metal. For instance, the metal oxide film can include Rb ions, La ions, and Cu ions. The superconducting metal oxide film can have a critical temperature for onset of superconductivity of greater than 250 K, e.g., greater than room temperature.

A sputtering target including an oxide with a low impurity concentration is provided. Provided is a method for manufacturing a sputtering target, including a first step of preparing a mixture including indium, zinc, an element M (the element M is aluminum, gallium, yttrium, or tin), and oxygen; a second step of raising a temperature of the mixture from a first temperature to a second temperature in a first atmosphere containing nitrogen at a concentration of higher than or equal to 90 vol % and lower than or equal to 100 vol %; and a third step of lowering the temperature of the mixture from the second temperature to a third temperature in a second atmosphere containing oxygen at a concentration of higher than or equal to 10 vol % and lower than or equal to 100 vol %.

The present invention provides an oxide-base scintillator single crystal having an extremely large energy of light emission, adoptable to X-ray CT and radioactive ray transmission inspection apparatus, and more specifically to provide a Pr-containing, garnet-type oxide single crystal, a Pr-containing perovskite-type oxide single crystal, and a Pr-containing silicate oxide single crystal allowing detection therefrom light emission supposedly ascribable to 5d-4f transition of Pr.