Proposed are a layered Group III-V compound containing phosphorus, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound represented by [Formula 1] M.sub.x-mA.sub.yP.sub.z (Where M is at least one of Group II elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x).

A composite nitride-based film structure includes a bulk single crystal, a plurality of nitride microcrystals, and an amorphous nitride thin film. The plurality of nitride microcrystals is provided on the bulk single crystal, and has a specific orientation relationship with a crystal structure of the bulk single crystal. The nitride thin film is provided on the bulk single crystal, surrounds the nitride microcrystal, and covers a surface of the bulk single crystal.

A composite nitride-based film structure includes a bulk single crystal, a plurality of nitride microcrystals, and an amorphous nitride thin film. The plurality of nitride microcrystals is provided on the bulk single crystal, and has a specific orientation relationship with a crystal structure of the bulk single crystal. The nitride thin film is provided on the bulk single crystal, surrounds the nitride microcrystal, and covers a surface of the bulk single crystal.

The invention relates to a method for producing an optoelectronic semiconductor chip (100) comprising the steps: A) providing a surface (2) in a chamber (5), B) providing at least one organic first precursor (3) and one second precursor (4) in the chamber (5), wherein the organic first precursor (3) comprises a gaseous III-compound material (3), wherein the second precursor (4) comprises a gaseous phosphorus-containing compound material (41), C) epitaxial deposition of the first and the second precursor (3, 4) at a temperature between 540 C. inclusive and 660 C. inclusive and a pressure between 30 mbar inclusive and 300 mbar inclusive onto the surface (2) in the chamber (5) to form a first layer (12), comprising a phosphide compound semiconductor material (6), wherein the ratio between the second and the first precursor (3, 4) is between 5 inclusive and 200 inclusive, wherein the phosphide compound semiconductor material (6) produced is doped with carbon, wherein the carbon doping concentration is at least 410.sup.19 cm.sup.3.

The invention relates to a method for producing an optoelectronic semiconductor chip (100) comprising the steps: A) providing a surface (2) in a chamber (5), B) providing at least one organic first precursor (3) and one second precursor (4) in the chamber (5), wherein the organic first precursor (3) comprises a gaseous III-compound material (3), wherein the second precursor (4) comprises a gaseous phosphorus-containing compound material (41), C) epitaxial deposition of the first and the second precursor (3, 4) at a temperature between 540 C. inclusive and 660 C. inclusive and a pressure between 30 mbar inclusive and 300 mbar inclusive onto the surface (2) in the chamber (5) to form a first layer (12), comprising a phosphide compound semiconductor material (6), wherein the ratio between the second and the first precursor (3, 4) is between 5 inclusive and 200 inclusive, wherein the phosphide compound semiconductor material (6) produced is doped with carbon, wherein the carbon doping concentration is at least 410.sup.19 cm.sup.3.

The present invention discloses a method for carrying out phosphide in-situ injection synthesis by carrier gas, relating to a synthetic method of semiconductor crystal: step A, shielding inert gas is introduced into a furnace body through a carrier gas intake conduit; step B, a crucible is heated in the furnace body to melt a pre-synthesized raw material in the crucible; step C, the heated shielding inert gas is introduced into the furnace body through the carrier gas intake conduit; step D, a phosphorus source furnace loaded with red phosphorus is moved downwards until an injection conduit of the phosphorus source furnace is submerged in the melt; step E, the red phosphorus is heated by the phosphorus source furnace to produce phosphorus gas, and the phosphorus gas is mixed with the shielding inert gas and then injected into the melt through the injection conduit, and the phosphorus gas reacts with the melt to produce phosphide; and step F, each device is turned off after the synthesis is finished. In the present invention in the synthesis process, the shielding inert gas is introduced through the carrier gas intake conduit to enable the phosphorus gas to be stably injected into the melt, so that the melt is prevented from being sucked back into the phosphorus source furnace after the volatile element gas is completely absorbed.

The present invention discloses a method for carrying out phosphide in-situ injection synthesis by carrier gas, relating to a synthetic method of semiconductor crystal: step A, shielding inert gas is introduced into a furnace body through a carrier gas intake conduit; step B, a crucible is heated in the furnace body to melt a pre-synthesized raw material in the crucible; step C, the heated shielding inert gas is introduced into the furnace body through the carrier gas intake conduit; step D, a phosphorus source furnace loaded with red phosphorus is moved downwards until an injection conduit of the phosphorus source furnace is submerged in the melt; step E, the red phosphorus is heated by the phosphorus source furnace to produce phosphorus gas, and the phosphorus gas is mixed with the shielding inert gas and then injected into the melt through the injection conduit, and the phosphorus gas reacts with the melt to produce phosphide; and step F, each device is turned off after the synthesis is finished. In the present invention in the synthesis process, the shielding inert gas is introduced through the carrier gas intake conduit to enable the phosphorus gas to be stably injected into the melt, so that the melt is prevented from being sucked back into the phosphorus source furnace after the volatile element gas is completely absorbed.

The present invention discloses a method for carrying out phosphide in-situ injection synthesis by carrier gas, relating to a synthetic method of semiconductor crystal: step A, shielding inert gas is introduced into a furnace body through a carrier gas intake conduit; step B, a crucible is heated in the furnace body to melt a pre-synthesized raw material in the crucible; step C, the heated shielding inert gas is introduced into the furnace body through the carrier gas intake conduit; step D, a phosphorus source furnace loaded with red phosphorus is moved downwards until an injection conduit of the phosphorus source furnace is submerged in the melt; step E, the red phosphorus is heated by the phosphorus source furnace to produce phosphorus gas, and the phosphorus gas is mixed with the shielding inert gas and then injected into the melt through the injection conduit, and the phosphorus gas reacts with the melt to produce phosphide; and step F, each device is turned off after the synthesis is finished. In the present invention in the synthesis process, the shielding inert gas is introduced through the carrier gas intake conduit to enable the phosphorus gas to be stably injected into the melt, so that the melt is prevented from being sucked back into the phosphorus source furnace after the volatile element gas is completely absorbed.

The present invention discloses a method for carrying out phosphide in-situ injection synthesis by carrier gas, relating to a synthetic method of semiconductor crystal: step A, shielding inert gas is introduced into a furnace body through a carrier gas intake conduit; step B, a crucible is heated in the furnace body to melt a pre-synthesized raw material in the crucible; step C, the heated shielding inert gas is introduced into the furnace body through the carrier gas intake conduit; step D, a phosphorus source furnace loaded with red phosphorus is moved downwards until an injection conduit of the phosphorus source furnace is submerged in the melt; step E, the red phosphorus is heated by the phosphorus source furnace to produce phosphorus gas, and the phosphorus gas is mixed with the shielding inert gas and then injected into the melt through the injection conduit, and the phosphorus gas reacts with the melt to produce phosphide; and step F, each device is turned off after the synthesis is finished. In the present invention in the synthesis process, the shielding inert gas is introduced through the carrier gas intake conduit to enable the phosphorus gas to be stably injected into the melt, so that the melt is prevented from being sucked back into the phosphorus source furnace after the volatile element gas is completely absorbed.

The invention provides a device and method for continuous VGF crystal growth through rotation after horizontal injection synthesis, and belongs to the technical field of semiconductor crystal synthesis and growth. According to the used technical scheme, the device comprises a furnace body, a synthesis and crystal growth system positioned in a furnace cavity, and a heating system, a temperature measuring system, a heat preservation system and a control system matched therewith, wherein the synthesis and crystal growth system comprises a crucible and a volatile element carrier arranged on a horizontal side of the crucible, and the volatile element carrier is communicated with the crucible through an injection pipe to realize horizontal injection synthesis; the furnace body has a rotational freedom degree by means of a matched rotating mechanism, so that after the direct horizontal injection synthesis of a volatile element and a pure metal element, the entire furnace body is controlled by the rotating mechanism to slowly rotate, such that a high-purity compound semiconductor crystal is prepared through continuous VGF crystal growth after crystal synthesis, and the condition that a seed crystal is molten by the pure metal before VGF crystal growth can be avoided; and the method has characteristics of simple steps, easy operation and control, and is suitable for the industrial production of semiconductor crystals.