The embodiments herein provide a system and a method for the synthesis of Graphene Quantum Dots (GQDs) for use in applications like nano-electronics, photonics, bio-imaging, energy storage, quantum computing, etc. Cu substrate is placed inside the CVD tube, and the CVD Chamber is sealed. The process parameters for CVD process are set up. Precursor gases injected inside the tube are dissociated to form carbon dimers and trimmers. Upon cooling semi-crystalline carbon film deposits inside the CVD tube. Oxidizing gas mixture is injected to convert amorphous C in semi-crystalline carbon film to CO.sub.2/CO. Graphene Quantum Dots (GQDs) so formed are carried with the gas flow and deposited at the cooler end of tube. The scrapper assembly is inserted in the CVD Tube and the reagent is sprayed inside the tube to disperse these GQDs in the reagent. This dispersion is pumped out of the CVD Chamber.

The embodiments herein provide a system and a method for the synthesis of Graphene Quantum Dots (GQDs) for use in applications like nano-electronics, photonics, bio-imaging, energy storage, quantum computing, etc. Cu substrate is placed inside the CVD tube, and the CVD Chamber is sealed. The process parameters for CVD process are set up. Precursor gases injected inside the tube are dissociated to form carbon dimers and trimmers. Upon cooling semi-crystalline carbon film deposits inside the CVD tube. Oxidizing gas mixture is injected to convert amorphous C in semi-crystalline carbon film to CO.sub.2/CO. Graphene Quantum Dots (GQDs) so formed are carried with the gas flow and deposited at the cooler end of tube. The scrapper assembly is inserted in the CVD Tube and the reagent is sprayed inside the tube to disperse these GQDs in the reagent. This dispersion is pumped out of the CVD Chamber.

A process of controlling the morphology of graphite in a process for the production of graphite, the process comprising: contacting at elevated temperature, a metal-containing catalyst with a hydrocarbon gas to catalytically convert at least a portion of the hydrocarbon gas to hydrogen and carbon; wherein the temperature is between 600° C. and 1000° C. and a pressure between 0 bar(g) and 100 bar(g), and wherein both the temperature and the pressure are set within predetermined value ranges to selectively synthesise graphitic material with a desired morphology.

A process of controlling the morphology of graphite in a process for the production of graphite, the process comprising: contacting at elevated temperature, a metal-containing catalyst with a hydrocarbon gas to catalytically convert at least a portion of the hydrocarbon gas to hydrogen and carbon; wherein the temperature is between 600° C. and 1000° C. and a pressure between 0 bar(g) and 100 bar(g), and wherein both the temperature and the pressure are set within predetermined value ranges to selectively synthesise graphitic material with a desired morphology.

A technique that enables production of pellicle membranes that are better resistant to breakage when subjected to force exerted thereon in the thickness direction thereof and that have high transmittance to light. A pellicle membrane of the present invention includes a plurality of laminated layers, where at least one of the layers is provided with at least one hole having a width or diameter of 10 nm to 500 nm.

Methods for the bottom-up growth of graphene nanoribbons are provided. The methods utilize small aromatic molecular seeds to initiate the anisotropic chemical vapor deposition (CVD) growth of graphene nanoribbons having low size polydispersities on the surface of a growth substrate. The aromatic molecular seeds include polycyclic aromatic hydrocarbons (PAHs), functionalized derivatives of PAHs, heterocyclic aromatic molecules, and metal complexes of heterocyclic aromatic molecules.

Methods for the bottom-up growth of graphene nanoribbons are provided. The methods utilize small aromatic molecular seeds to initiate the anisotropic chemical vapor deposition (CVD) growth of graphene nanoribbons having low size polydispersities on the surface of a growth substrate. The aromatic molecular seeds include polycyclic aromatic hydrocarbons (PAHs), functionalized derivatives of PAHs, heterocyclic aromatic molecules, and metal complexes of heterocyclic aromatic molecules.

Provided are a 2-dimensional microporous graphene and a method for preparing the same. The 2-dimensional microporous graphene has an average pore size of about 0.1 nm to about 2 nm, interpore spacing of about 0.3 nm to about 10 nm, and a standard deviation of the interpore spacing of less than or equal to about 5 nm.

Provided are a 2-dimensional microporous graphene and a method for preparing the same. The 2-dimensional microporous graphene has an average pore size of about 0.1 nm to about 2 nm, interpore spacing of about 0.3 nm to about 10 nm, and a standard deviation of the interpore spacing of less than or equal to about 5 nm.

The present disclosure provides a method for preparing patterned graphene, and the method includes using a silicon carbide base as a solid-state carbon source, decomposing the silicon carbide under the action of high temperature and catalyst, to directly grow graphene on an insulating substrate. Through a first patterned trench and a second patterned trench in an accommodating passage, the pattern of the formed graphene can be directly controlled. Therefore, the present disclosure can accurately locate the position of the patterned graphene on the insulating substrate, it does not require transferring the graphene one more time, thereby avoiding contaminating the graphene and damaging its structure, and there is no need for photo-lithography, ion etching and other processes to treat the graphene in order to obtain patterned graphene, which further avoids damages to the graphene.