Described herein is a nanostructured silicon carbonaceous composite material and methods for producing the same. The methods include formation of a metal organic framework/silica (MOF/SiO.sub.2) intermediate material and conversion of the MOF/SiO.sub.2 intermediate material to the nanostructured silicon carbonaceous composite material. Relatively inexpensive and/or recycled materials can be used as precursors in manufacturing the nanostructured silicon carbon composition material, which can be used in various applications, including as silicon anode material in a lithium-ion battery.

Described herein is a nanostructured silicon carbonaceous composite material and methods for producing the same. The methods include formation of a metal organic framework/silica (MOF/SiO.sub.2) intermediate material and conversion of the MOF/SiO.sub.2 intermediate material to the nanostructured silicon carbonaceous composite material. Relatively inexpensive and/or recycled materials can be used as precursors in manufacturing the nanostructured silicon carbon composition material, which can be used in various applications, including as silicon anode material in a lithium-ion battery.

The invention relates to a method for the production of high-purity elementary silicon from a starting material containing silicon dioxide, which includes the steps of: a) thermal pre-purification of the starting material, wherein impurities from the group consisting of boron and phosphorus are separated essentially completely and a pre-purified silicon dioxide is obtained; b) reduction of the pre-purified silicon dioxide to elementary silicon; and c) removal of impurities remaining in the pre-purified silicon dioxide after step a) during and/or after step b).

The invention relates to a method for the production of high-purity elementary silicon from a starting material containing silicon dioxide, which includes the steps of: a) thermal pre-purification of the starting material, wherein impurities from the group consisting of boron and phosphorus are separated essentially completely and a pre-purified silicon dioxide is obtained; b) reduction of the pre-purified silicon dioxide to elementary silicon; and c) removal of impurities remaining in the pre-purified silicon dioxide after step a) during and/or after step b).

A carbon negative clean fuel production system includes: a main platform; a heat collection device for capturing heat from a hydrothermal emissions from a hydrothermal vent on a floor of an ocean; a heat-driven electric generator; a heat distribution system including a heat absorbing material and a heat transporting pipe; anchor platforms tethered to the main platform; a mineral separator; a seawater filtration unit; a water splitting device; a sand refinery machine; a carbon removal system; and a chemical production system for producing hydrides, halides and silane. Also disclosed is a method for carbon negative clean fuel production, including: capturing heat; producing electric energy; separating minerals; filtering seawater; splitting water; refining sand; removing carbon dioxide; and producing hydrides, halides, and silane.

In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.

In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.

In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.

In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.

A carbon negative clean fuel production system includes: a main platform; a heat collection device for capturing heat from a hydrothermal emissions from a hydrothermal vent on a floor of an ocean; a heat driven electric generator; a heat distribution system including a heat absorbing material and a heat transporting pipe; anchor platforms tethered to the main platform; a mineral separator; a seawater filtration unit; a water splitting device; a sand refinery machine; a carbon removal system; and a chemical production system for producing hydrides, halides and silane. Also disclosed is a method for carbon negative clean fuel production, including: capturing heat; producing electric energy; separating minerals; filtering seawater; splitting water; refining sand; removing carbon dioxide; and producing hydrides, halides, and silane.