C01G23/0536

Semiconductor device comprising work function metal pattern in boundary region and method for fabricating the same

A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region of the substrate to separate the cell region from the core region, a high-k dielectric layer on at least a part of the boundary element isolation layer and the core region of the substrate, a first work function metal pattern comprising a first extension overlapping the boundary element isolation layer on the high-k dielectric layer, and a second work function metal pattern comprising a second extension overlapping the boundary element isolation layer on the first work function metal pattern, wherein a first length of the first extension is different from a second length of the second extension.

SURFACE FUNCTIONALIZED TITANIUM DIOXIDE NANOPARTICLES

The present invention relates to surface functionalized titanium dioxide nanoparticles, a method for its production, a coating composition, comprising the surface functionalized titanium dioxide nanoparticles and the use of the coating composition for coating holo-grams, wave guides and solar panels. Holograms are bright and visible from any angle, when printed with the coating composition, comprising the surface functionalized tita-nium dioxide nanoparticles.

Titanium dioxide / sulfonated graphene oxide / Ag nanoparticle composite membrane and preparation and application thereof
10625214 · 2020-04-21 · ·

Titanium dioxide/sulfonated graphene oxide/silver nanoparticle composite membrane and its preparation method and application are disclosed. Mixing graphene oxide, sodium chloroethanesulfonate, and sodium hydroxide uniformly in the water, and then adding concentrated nitric acid to obtain sulfonated graphene oxide; mixing the aqueous solution of said sulfonated graphene oxide with the aqueous solution of silver nitrate, stirring in the dark, then adding ascorbic acid, and continuing to stir to obtain a silver nanoparticle/sulfonated graphene oxide composite material; dispersing said silver nanoparticle/sulfonated graphene oxide composite material in water, and then deposited on said titanium dioxide nanorods arrays by vacuum deposition, and vacuum dried to obtain titanium dioxide/sulfonated graphene oxide/silver nanoparticle composite membrane. The membrane possessed photocatalytic effect under UV light and special wettability: super-hydrophobic oil under water/super-hydrophobic under oil, which could in situ separation and degradation of oil/water emulsion.

Linear Porous Titanium Dioxide Material And Preparation And Use Thereof
20200071186 · 2020-03-05 ·

The present invention provides a linear porous titanium dioxide material and the preparation and products thereof. The linear porous titanium dioxide material has an anatase phase structure and a single crystal structure, and the structure of the linear porous titanium dioxide material is composed of a plurality of particles having an oriented growth direction. The invention also provides a method of preparing the above material and the use thereof. The long axis of structure of the titanium dioxide porous nanowire of the present invention facilitates effective electron migration.

Recovery Of Chlorine From Hydrogen Chloride Generated In Carbochlorination Processes
20240034638 · 2024-02-01 · ·

The invention relates to a method for recovering chlorine from hydrogen chloride generated in carbochlorination processes. Further, the invention refers to the use of this method for recovering chlorine from hydrogen chloride generated in a carbochlorination process.

TiO2 base coagulant and its application

The present invention provides a TiO.sub.2-based coagulant and use thereof. The TiO.sub.2-based coagulant is obtained by the following steps: uniformly mixing acetylacetone and ethanol and dropwise adding titanium tetrachloride to obtain a solution A; mixing deionized water and ethanol to obtain a solution B; dropwise adding solution B to solution A; stirring to obtain a sol, and then aging the sol to constant weight to obtain the TiO.sub.2-based coagulant. The TiO.sub.2-based coagulant can be used for treating waste water and algae-laden water. The TiO.sub.2-based coagulant exhibits good coagulation effects and high stability, solves the problem of too low effluent pH caused by strong inorganic titanate acidity and is favorable to the subsequent treatment of waste water.

SEMICONDUCTOR DEVICE COMPRISING WORK FUNCTION METAL PATTERN IN BOUNDRY REGION AND METHOD FOR FABRICATING THE SAME

A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region of the substrate to separate the cell region from the core region, a high-k dielectric layer on at least a part of the boundary element isolation layer and the core region of the substrate, a first work function metal pattern comprising a first extension overlapping the boundary element isolation layer on the high-k dielectric layer, and a second work function metal pattern comprising a second extension overlapping the boundary element isolation layer on the first work function metal pattern, wherein a first length of the first extension is different from a second length of the second extension.

Preparation method for directly synthesizing titanium dioxide from titanium-rich organic phase prepared from ilmenite

The present invention relates to a method for directly synthesizing titanium dioxide from a titanium-rich organic phase prepared from ilmenite, and more particularly to a method in which a titanium-rich acidolysis solution is obtained by an efficient ore dissolving technology, titanium ions are transferred to the organic phase by means of an effective titanium extractant to obtain a high-purity and titanium-rich organic phase, and then the titanium dioxide is directly synthesized in the organic phase. With this method, the dissolution rate of ilmenite can be effectively improved, the process flow is shortened and production costs are reduced, and titanium dioxide with high yield and high quality is obtained.

MIXTURE OF VISIBLE LIGHT-RESPONSIVE PHOTOCATALYTIC TITANIUM OXIDE FINE PARTICLES, DISPERSION LIQUID THEREOF, METHOD FOR PRODUCING DISPERSION LIQUID, PHOTOCATALYST THIN FILM, AND MEMBER HAVING PHOTOCATALYST THIN FILM ON SURFACE

Provided are the following: a mixture of visible light-responsive photocatalytic titanium oxide fine particles which can conveniently produce a photocatalyst thin film that exhibits photocatalyst activity even with only visible light (400-800 nm) and that exhibits high transparency; a dispersion liquid of the fine particles; a method for producing the dispersion liquid; a photocatalyst thin film; and a member having the photocatalyst thin film on a surface thereof. The mixture of visible light-responsive photocatalytic titanium oxide fine particles is characterized by containing two kinds of titanium dioxide fine particles: first titanium oxide fine particles, in which a tin component and a transition metal component (excluding an iron group element component) that increases visible light response properties form a solid solution, and second titanium oxide fine particles, in which an iron group element component and a chromium group element component form a solid solution.

Semiconductor device comprising work function metal pattern in boundry region and method for fabricating the same

A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region of the substrate to separate the cell region from the core region, a high-k dielectric layer on at least a part of the boundary element isolation layer and the core region of the substrate, a first work function metal pattern comprising a first extension overlapping the boundary element isolation layer on the high-k dielectric layer, and a second work function metal pattern comprising a second extension overlapping the boundary element isolation layer on the first work function metal pattern, wherein a first length of the first extension is different from a second length of the second extension.