C03C17/2456

Interface layer for electronic devices

Transparent conducting electrodes incorporate an interface layer located on the transparent conducting oxide (TCO) layer of the electrode. The interface layer offers a suitable surface for deposition of further layers in order to fabricate electronic devices such as electrochromic devices or organic light emitting diodes. Problems such as pinholes and short circuiting, associated with the inherent roughness of the TCO layer, are reduced.

GLAZING PROVIDED WITH A THIN-LAYER STACK FOR SOLAR PROTECTION

A solar protection and/or thermal insulation glazing including a substrate, in particular a glass substrate, provided with a stack of thin layers which act on solar radiation, the stack having the succession of the following layers, starting from the surface of the glass: an underlayer or a set of underlayers, the underlayer(s) having dielectric materials, a layer based on titanium oxide also having silicon, the overall Si/Ti atomic ratio in said layer being between 0.01 and 0.25, and in which Si and Ti represent at least 90% of the atoms other than oxygen, the thickness of the layer being between 20 and 70 nm, an overlayer or a set of overlayers, said overlayer(s) having dielectric materials.

WAVELENGTH CONVERSION ELEMENT, ILLUMINATION DEVICE, PROJECTOR, AND METHOD OF MANUFACTURING WAVELENGTH CONVERSION ELEMENT
20170168379 · 2017-06-15 · ·

A wavelength conversion element according to the invention includes: a base material; a wavelength conversion layer supported by one surface of the base material and containing a wavelength conversion material and an inorganic binder; a light transmitting layer provided in a side of the wavelength conversion layer opposite to the base material and made of an inorganic material; and an antireflection film provided in a side of the light transmitting layer opposite to the wavelength conversion layer.

Glass containers for storing pharmaceutical compositions

Disclosed herein are glass pharmaceutical vials having sidewalls of reduced thickness. In embodiments, the glass pharmaceutical vial may include a glass body comprising a sidewall enclosing an interior volume. An outer diameter D of the glass body is equal to a diameter d.sub.1 of a glass vial of size X as defined by ISO 8362-1, wherein X is one of 2R, 3R, 4R, 6R, 8R, 10R, 15R, 20R, 25R, 30R, 50R, and 100R as defined by ISO 8362-1. However, the sidewall of the glass pharmaceutical vial comprises an average wall thickness T.sub.i that is less than or equal to 0.85*s.sub.1, wherein s.sub.1 is a wall thickness of the glass vial of size X as defined by ISO 8362-1 and X is one of 2R, 3R, 4R, 6R, 8R, 10R, 15R, 20R, 25R, 30R, 50R, and 100R as defined by ISO 8362-1.

DIELECTRIC MIRROR
20170139089 · 2017-05-18 ·

A dielectric mirror includes a coating having alternating high and low index layers. The mirror coating has no metallic reflective layer of Al or Ag in certain example embodiments, and may have film side and/or glass side visible reflection of from about 50-90% (more preferably from about 60-80% and most preferably from about 65-75%) and visible transmission of from about 10-50% (more preferably from about 10-40% or 20-40%) in certain example embodiments.

GLAZING FOR SOLAR PROTECTION PROVIDED WITH THIN-FILM COATINGS
20170088460 · 2017-03-30 · ·

A solar protection glazing includes a substrate covered with a coating of dielectric materials on each of its faces. The substrate is preferably a glass substrate. Each of the coatings consists of a layer based on titanium oxide or of a stack of layers of dielectric materials incorporating such a layer. The thickness of the layers based on titanium oxide in each of the coatings is between 10 and 70 nm.

COATED GLAZING

A coated glazing comprising: a transparent glass substrate, wherein a surface of the substrate is directly or indirectly coated with at least one layer based on a transparent conductive coating (TCC) and/or at least one layer based on a material with a refractive index of at least 1.75, and wherein said surface has an arithmetical mean height of the surface value, Sa, of at least 0.4 nm prior to said coating of said surface.

Dielectric mirror

A dielectric mirror includes a coating having alternating high and low index layers. The mirror coating has no metallic reflective layer of Al or Ag in certain example embodiments, and may have film side and/or glass side visible reflection of from about 50-90% (more preferably from about 60-80% and most preferably from about 65-75%) and visible transmission of from about 10-50% (more preferably from about 10-40% or 20-40%) in certain example embodiments.

OPTICAL COATINGS INCLUDING BUFFER LAYERS
20170066684 · 2017-03-09 ·

An optics system component has a stainable glass substrate, an optical coating comprising alternating layers of dielectric materials, and a buffer layer positioned on the stainable glass substrate between the substrate and the optical coating. The buffer layer comprises a dielectric material and has a thickness of less than about 20 nm.

COATING FILM-EQUIPPED GLASS SUBSTRATE, AND METHOD FOR PRODUCING COATING FILM-EQUIPPED GLASS SUBSTRATE

To provide a glass substrate provided with a coating film having a high refractive index titania layer which is excellent in the heat resistance with cracking or the like by heat treatment suppressed, and a method for producing such a glass substrate provided with a coating film.

A glass substrate provide with a coating film, comprising a glass substrate and a coating film containing at least one TiO.sub.2 layer having a refractive index of at least 2.20 at a wavelength of 632 nm, formed by low temperature plasma CVD method on the glass substrate, and a method for producing a glass substrate provided with a coating film, which comprises a step of forming a TiO.sub.2 layer on a glass substrate by low temperature plasma CVD method using a film-forming material containing at least one member selected from an alkoxide type titanium material, an amide type titanium material and a halide type titanium material, at a plasma power density of at least 55 kW/m at a film-forming rate of from 15 to 200 nm.Math.m/m in.