The present application relates to a large-size, high-dielectric breakdown strength titanium oxide based dielectric ceramic material, a preparation method and application thereof. The composition of the titanium oxide based dielectric ceramic material comprises: a CaTiO.sub.3+b SrTiO.sub.3+c TiO.sub.2+d Al.sub.2TiO.sub.5+e SiO.sub.2, wherein a, b, c, d, and e are the mole percentage of each component, 15a35 mol %, 0b2 mol %, 30c84 mol %, 0.5d25 mol %, 0.5e15 mol %, and a+b+c+d+e=100 mol %.

A ceramic device including a ceramic material, a patterned metal structure, and a surface activation material is provided. A surface of the ceramic material at least includes a first surface and a second surface that are not coplanar. The ceramic material has recesses on the surface thereof. The patterned metal structure is disposed on the first surface and the second surface. The surface activation material is disposed on a surface of the recesses and located at an interface between the ceramic material and the patterned metal structure.

A ceramic device including a ceramic material, a patterned metal structure, and a surface activation material is provided. A surface of the ceramic material at least includes a first surface and a second surface that are not coplanar. The ceramic material has recesses on the surface thereof. The patterned metal structure is disposed on the first surface and the second surface. The surface activation material is disposed on a surface of the recesses and located at an interface between the ceramic material and the patterned metal structure.

A ceramic device including a ceramic material, a patterned metal structure, and a surface activation material is provided. A surface of the ceramic material at least includes a first surface and a second surface that are not coplanar. The ceramic material has recesses on the surface thereof. The patterned metal structure is disposed on the first surface and the second surface. The surface activation material is disposed on a surface of the recesses and located at an interface between the ceramic material and the patterned metal structure.

A piezoelectric thin film does not easily generate a heterogeneous phase and exhibits good piezoelectric characteristics. The piezoelectric thin film contains a composition represented by a general formula: (1-n) (K.sub.1-xNa.sub.x).sub.mNbO.sub.3-nCaTiO.sub.3, wherein m, n, and x in the general formula are within the ranges of 0.87?m?0.97, 0?n?0.065, and 0?x?1.

A piezoelectric thin film does not easily generate a heterogeneous phase and exhibits good piezoelectric characteristics. The piezoelectric thin film contains a composition represented by a general formula: (1-n) (K.sub.1-xNa.sub.x).sub.mNbO.sub.3-nCaTiO.sub.3, wherein m, n, and x in the general formula are within the ranges of 0.87?m?0.97, 0?n?0.065, and 0?x?1.

Proposed are a metal-substituted titanium oxide which has a composition other than conventional Ti.sub.3O.sub.5 while having a property of being able to undergo phase transition from a crystal structure in a paramagnetic metal state to a crystal structure of a nonmagnetic semiconductor upon application of pressure or light and which can also be used in fields other than conventional technical fields, and a method for producing a metal-substituted titanium oxide sintered body. According to the present invention, it is possible to provide a metal-substituted titanium oxide having a crystal structure which does not undergo phase transition to a crystal structure having the properties of a nonmagnetic semiconductor even at 460 [K] or lower but maintains a paramagnetic metal state over the entire temperature range of 0 to 800 [K] and which undergoes phase transition to a crystal structure of a nonmagnetic semiconductor upon application of pressure or light, the metal-substituted titanium oxide having a composition in which some of Ti sites of Ti.sub.3O.sub.5 are substituted with any one of Mg, Mn, Al, V and Nb.

The present disclosure provides a multilayer electronic component which may improve a break down voltage (BDV) characteristic by adjusting a ratio of a content of an element included in a first or second region of a dielectric layer to reduce a difference in dielectric grain size dispersion and grain density in the first or second region.

A conductive paste included in inner electrodes of a multilayer ceramic capacitor is fired and includes a conductive metal powder, a ceramic powder, an organic solvent, and an organic binder. The conductive metal powder includes copper, and at least a portion of the ceramic powder is a powder of at least one oxide of an ABO.sub.3 type with a specified ionic radius in which a ratio of a six-coordinate ionic radius of an A-site element in ABO.sub.3 to a six-coordinate ionic radius of copper is about 0.96 or greater and about 1.04 or less.

A conductive paste included in inner electrodes of a multilayer ceramic capacitor is fired and includes a conductive metal powder, a ceramic powder, an organic solvent, and an organic binder. The conductive metal powder includes copper, and at least a portion of the ceramic powder is a powder of at least one oxide of an ABO.sub.3 type with a specified ionic radius in which a ratio of a six-coordinate ionic radius of an A-site element in ABO.sub.3 to a six-coordinate ionic radius of copper is about 0.96 or greater and about 1.04 or less.