The problem addressed lies in providing a dielectric composition having a relatively high dielectric constant of 800 or greater when a DC bias of at least 8 V/m is applied, and also in providing a dielectric element employing said dielectric composition, an electronic component, and a laminated electronic component. [Solution] A dielectric composition in which the composition of the main component is in accordance with the following formula (1): (Bi.sub.aNa.sub.bSr.sub.c)(Mg.sub.dTi.sub.1-d)O.sub.3 (1) [where a, b, c and d satisfy the following: 0.10a0.65, 0<b0.45, 0<c0.85, 0<d<0.20, and 0.95a+b+c1.05].

The problem addressed lies in providing a dielectric composition having a relatively high dielectric constant of 800 or greater when a DC bias of at least 8 V/m is applied, and also in providing a dielectric element employing said dielectric composition, an electronic component, and a laminated electronic component. [Solution] A dielectric composition in which the composition of the main component is in accordance with the following formula (1): (Bi.sub.aNa.sub.bSr.sub.c)(Mg.sub.dTi.sub.1-d)O.sub.3 (1) [where a, b, c and d satisfy the following: 0.10a0.65, 0<b0.45, 0<c0.85, 0<d<0.20, and 0.95a+b+c1.05].

A dielectric composition, a dielectric element, an electronic component and a laminated electronic component are disclosed. In various embodiment, the dielectric composition includes a main component represented by (Bi.sub.aNa.sub.bSr.sub.cLn.sub.d)TiO.sub.3, wherein Ln is at least one element selected from the group consisting of: La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho and Yb, and wherein a, b, c and d satisfy the following: 0<a<0.50, 0<b<0.50, 0<c0.80, 0<d0.20, and 0.90a+b+c+d1.05.

A dielectric composition, a dielectric element, an electronic component and a laminated electronic component are disclosed. In various embodiment, the dielectric composition includes a main component represented by (Bi.sub.aNa.sub.bSr.sub.cLn.sub.d)TiO.sub.3, wherein Ln is at least one element selected from the group consisting of: La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho and Yb, and wherein a, b, c and d satisfy the following: 0<a<0.50, 0<b<0.50, 0<c0.80, 0<d0.20, and 0.90a+b+c+d1.05.

Piezoelectric compounds of the formula xNa.sub.mBi.sub.nTiO.sub.3-yK.sub.mBi.sub.nTiO.sub.3-zLi.sub.mBi.sub.nTiO.sub.3-pBaTiO.sub.3 where (0<x1), (0y1), (0z1), (0.3m0.7), (0.3n0.7), (0<p1) (0.9m/n1.1) as well as to doped variations thereof are disclosed. The material is suitable for high power applications.

Piezoelectric compounds of the formula xNa.sub.mBi.sub.nTiO.sub.3-yK.sub.mBi.sub.nTiO.sub.3-zLi.sub.mBi.sub.nTiO.sub.3-pBaTiO.sub.3 where (0<x1), (0y1), (0z1), (0.3m0.7), (0.3n0.7), (0<p1) (0.9m/n1.1) as well as to doped variations thereof are disclosed. The material is suitable for high power applications.

A dielectric porcelain composition with a sintering density of 93% or above, is expressed by the composition formula below: 100[1x(0.94Bi.sub.1/2Na.sub.1/2TiO.sub.30.06BaTiO.sub.3)xK.sub.0.5Na.sub.0.5NbO.sub.3]+CuO+LiF (wherein x is between 0.14 and 0.28, and and meet either (I) is between 0.4 and 1.5, and is between 0 and 2.4, or (II) is between 0 and 1.5, and is between 0.2 and 2.4). The dielectric porcelain composition is Pb-free and can be sintered at low temperature, as well as a dielectric element having such composition.

A dielectric porcelain composition with a sintering density of 93% or above, is expressed by the composition formula below: 100[1x(0.94Bi.sub.1/2Na.sub.1/2TiO.sub.30.06BaTiO.sub.3)xK.sub.0.5Na.sub.0.5NbO.sub.3]+CuO+LiF (wherein x is between 0.14 and 0.28, and and meet either (I) is between 0.4 and 1.5, and is between 0 and 2.4, or (II) is between 0 and 1.5, and is between 0.2 and 2.4). The dielectric porcelain composition is Pb-free and can be sintered at low temperature, as well as a dielectric element having such composition.

LTCC devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a matrix of titanates of alkaline earth metals, the matrix doped with at least one selected from rare-earth element, aluminum oxide, silicon oxide and bismuth oxide.

LTCC devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a matrix of titanates of alkaline earth metals, the matrix doped with at least one selected from rare-earth element, aluminum oxide, silicon oxide and bismuth oxide.