Provided is a piezoelectric material excellent in piezoelectricity. The piezoelectric material includes a perovskite-type complex oxide represented by the following General Formula (1).
A(Zn.sub.xTi.sub.(1-x)).sub.yM.sub.(1-y)O.sub.3(1)
wherein A represents at least one kind of element containing at least a Bi element and selected from a trivalent metal element; M represents at least one kind of element of Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value satisfying 0.4x0.6; and y represents a numerical value satisfying 0.1y0.9.

Provided is a piezoelectric composition containing a major component that is a perovskite-type oxide which is represented by the general formula ABO.sub.3, which contains no Pb, and which has A-sites containing Bi, Na, and K and B-sites containing Ti. The Ti is partly substituted with a transition metal element Me that is at least one selected from the group consisting of Mn, Cr, Fe, and Co. The content of Bi and the transition metal element Me in the perovskite-type oxide, which is the major component, is 6 mole percent to 43 mole percent in terms of Bi.sub.u1MeO.sub.3.

Provided is a piezoelectric composition containing a major component that is a perovskite-type oxide which is represented by the general formula ABO.sub.3, which contains no Pb, and which has A-sites containing Bi, Na, and K and B-sites containing Ti. The Ti is partly substituted with a transition metal element Me that is at least one selected from the group consisting of Mn, Cr, Fe, and Co. The content of Bi and the transition metal element Me in the perovskite-type oxide, which is the major component, is 6 mole percent to 43 mole percent in terms of Bi.sub.u1MeO.sub.3.

Provided is a dielectric thin film including a metal oxide. The metal oxide includes bismuth, sodium, barium, and titanium, at least a part of the metal oxide is a tetragonal crystal having a perovskite structure, and a (100) plane of at least a part of the tetragonal crystal is oriented in a normal direction of a surface of the dielectric thin film.

Provided is a dielectric thin film including a metal oxide. The metal oxide includes bismuth, sodium, barium, and titanium, at least a part of the metal oxide is a tetragonal crystal having a perovskite structure, and a (100) plane of at least a part of the tetragonal crystal is oriented in a normal direction of a surface of the dielectric thin film.

Disclosed are a bismuth sodium potassium titanate-barium titanate (BNKT-BT)-based composite ceramic material with high depolarization temperature and a preparation method thereof, belonging to the technical field of piezoelectric ceramics of electronic materials. The chemical general formula of the BNKT-BT based composite ceramic material is: 0.85(Bi.sub.0.5Na.sub.0.5)TiO.sub.3-0.11(Bi.sub.0.5K.sub.0.5)TiO.sub.3-0.04BaTiO.sub.3-xZnO, where 0.1x0.3. The composite ceramic material takes BNKT-BT ceramics as the substrate, and single-phase ZnO is embedded in the middle of the substrate to form a 0-3 composite structure.

Disclosed are a bismuth sodium potassium titanate-barium titanate (BNKT-BT)-based composite ceramic material with high depolarization temperature and a preparation method thereof, belonging to the technical field of piezoelectric ceramics of electronic materials. The chemical general formula of the BNKT-BT based composite ceramic material is: 0.85(Bi.sub.0.5Na.sub.0.5)TiO.sub.3-0.11(Bi.sub.0.5K.sub.0.5)TiO.sub.3-0.04BaTiO.sub.3-xZnO, where 0.1x0.3. The composite ceramic material takes BNKT-BT ceramics as the substrate, and single-phase ZnO is embedded in the middle of the substrate to form a 0-3 composite structure.

A method of manufacturing ceramic composite material comprises forming a combination of flowable metal oxide precursor (102), which is water-insoluble, and electroceramic powder (104) for covering surfaces of the electroceramic particles (500) with the metal oxide precursor (102), the electroceramic powder (104). A major fraction of the particles (500) has particle diameters within a range 50 m to 200 m, and a minor fraction of the particles has diameters smaller than the lower limit of said range, the major fraction having a variety of particle diameters. Then pressure 100 MPa to 500 MPa is applied to said combination, and said combination is exposed, under the pressure, to a heat treatment, which has a maximum temperature within 100 C. to 500 C. for a predefined period for forming the ceramic composite material.