A piezoelectric/electrostrictive material is composed of Mn and a compound of Pb(Zn, Nb)O.sub.3Pb(Ni, Nb)O.sub.3Pb(Zr, Ti)O.sub.3. A ratio of a molar amount of Mn relative to a sum of respective molar amounts of Ni, Zn, Ti, Zr, Nb and Mn is at least 0.001 to no more than 0.015. A ratio of a molar amount of Nb relative to a sum of respective molar amounts of Ni and Zn is at least 2.007 to no more than 2.125.

A piezoelectric/electrostrictive material is composed of Mn and a compound of Pb(Zn, Nb)O.sub.3Pb(Ni, Nb)O.sub.3Pb(Zr, Ti)O.sub.3. A ratio of a molar amount of Mn relative to a sum of respective molar amounts of Ni, Zn, Ti, Zr, Nb and Mn is at least 0.001 to no more than 0.015. A ratio of a molar amount of Nb relative to a sum of respective molar amounts of Ni and Zn is at least 2.007 to no more than 2.125.

Disclosed are methods of forming a dielectric material. One method comprises modifying a tungsten bronze crystal structure by substituting one or more lattice sites with one or more elements selected to increase a quality factor (Q) of the dielectric material.

Disclosed are methods of forming a dielectric material. One method comprises modifying a tungsten bronze crystal structure by substituting one or more lattice sites with one or more elements selected to increase a quality factor (Q) of the dielectric material.

Provided is a piezoelectric film having a perovskite type crystal structure represented by the following Formula (P), in which a piezoelectric constant d.sub.31 (pm/V), a relative dielectric constant (), and a dielectric loss tan () satisfy (d.sub.31).sup.2/(tan 1000)>3. In addition, a method for manufacturing the above piezoelectric film is provided.

Pb.sub.x[(Zr.sub.aTi.sub.1-a).sub.1-yNb.sub.y]O.sub.z(P)

(in Formula (P), x represents a lead content, y represents a Nb content (B site doping amount), z represents an oxygen content, a represents a Zr/Ti ratio, and y>0.14, and although x=1.0 and z=3 is standard, numerical values of x and z may deviate from 1.0 and 3, respectively, within a range where a perovskite structure can be adopted.)

Provided is a piezoelectric film having a perovskite type crystal structure represented by the following Formula (P), in which a piezoelectric constant d.sub.31 (pm/V), a relative dielectric constant (), and a dielectric loss tan () satisfy (d.sub.31).sup.2/(tan 1000)>3. In addition, a method for manufacturing the above piezoelectric film is provided.

Pb.sub.x[(Zr.sub.aTi.sub.1-a).sub.1-yNb.sub.y]O.sub.z(P)

(in Formula (P), x represents a lead content, y represents a Nb content (B site doping amount), z represents an oxygen content, a represents a Zr/Ti ratio, and y>0.14, and although x=1.0 and z=3 is standard, numerical values of x and z may deviate from 1.0 and 3, respectively, within a range where a perovskite structure can be adopted.)

Disclosed are embodiments of tungsten bronze crystal structures that can have both a high dielectric constant and low temperature coefficient, making them advantageous for applications that experience temperature changes and gradients. In particular, tantalum can be substituted into the crystal structure to improve properties. Embodiments of the material can be useful for radiofrequency applications such as resonators and antennas.

Disclosed are embodiments of tungsten bronze crystal structures that can have both a high dielectric constant and low temperature coefficient, making them advantageous for applications that experience temperature changes and gradients. In particular, tantalum can be substituted into the crystal structure to improve properties. Embodiments of the material can be useful for radiofrequency applications such as resonators and antennas.

A piezoelectric PTZT film is formed of a metal oxide having a perovskite structure including Pb, Ta, Zr, and Ti, in which the metal oxide further includes carbon, and a content of the carbon is 80 to 800 ppm by mass. In a process for producing a liquid composition for forming a piezoelectric film, a Ta alkoxide, a Zr alkoxide, -diketones, and a diol are refluxed, a Ti alkoxide is added into a first synthesis solution obtained by the refluxing, and then refluxing is performed again, a Pb compound is added into a second synthesis solution obtained by performing the additional refluxing, and then refluxing is performed again, a solvent is removed from a third synthesis solution obtained by performing the additional refluxing, and then, dilution with alcohol is performed, to produce the liquid composition for forming a piezoelectric PTZT film.

A piezoelectric PTZT film is formed of a metal oxide having a perovskite structure including Pb, Ta, Zr, and Ti, in which the metal oxide further includes carbon, and a content of the carbon is 80 to 800 ppm by mass. In a process for producing a liquid composition for forming a piezoelectric film, a Ta alkoxide, a Zr alkoxide, -diketones, and a diol are refluxed, a Ti alkoxide is added into a first synthesis solution obtained by the refluxing, and then refluxing is performed again, a Pb compound is added into a second synthesis solution obtained by performing the additional refluxing, and then refluxing is performed again, a solvent is removed from a third synthesis solution obtained by performing the additional refluxing, and then, dilution with alcohol is performed, to produce the liquid composition for forming a piezoelectric PTZT film.