A dielectric composition containing a complex oxide represented by the formula of xAO-yBO-zC.sub.2O.sub.5 as the main component, wherein A represents at least one element selected from the group including Ba, Ca and Sr, B represents Mg, and C represents at least one element selected from the group including Nb and Ta, and x, y and z meet the following conditions, x+y+z=1.000, 0.198≦x≦0.375, 0.389≦y≦0.625, and x/3≦z≦x/3+1/9.

A method for preparing an infrared radiation ceramic material includes mixing and ball milling raw materials of Fe.sub.2O.sub.3, MnO.sub.2 and CuO in a mass ratio to obtain a mixed powder; pressing the mixed powder; adjusting laser spot, laser power and laser sintering time of a laser; irradiating or sintering by a first laser the pressed mixed powder in a crucible for a high-temperature solid-phase reaction to obtain an AB.sub.2O.sub.4 type ferrite powder; obtaining a first mixture by mixing the AB.sub.2O.sub.4 type ferrite powder and a cordierite powder in a mass ratio; adding a sintering aid and a nucleating agent for ball milling; obtaining a second mixture by mixing the first mixture and a binder for aging; pressing the second mixture; and irradiating or sintering the pressed second mixture by a second laser to obtain the infrared radiation ceramic material.

A semiconductor ceramic composition represented by formula (1),

(Ba.sub.vBi.sub.xA.sub.yRE.sub.w).sub.m(Ti.sub.uTM.sub.z)O.sub.3  (1),

wherein, A represents at least one element selected from Na and K, RE represents at least one element selected from Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er;

0.750y≦x≦1.50y  (2),

0.007≦y≦0.125  (3),

0≦(w+z)≦0.010  (4),

v+x+y+w=1  (5),

u+z=1  (6),

0.950≦m≦1.050  (7),

0.001 to 0.055 mol of Ca is contained, and 0.0005 to 0.005 mol of at least one selected from Mg, Al, Fe, Co, Cu and Zn is contained.

A method for the additive production of a ceramic main part has the following steps: providing a slip of ceramic base material particles suspended in a liquid phase; producing a slip layer; orienting the radiation of a laser light source onto a section of the slip layer; evaporating liquid phase out of the slip layer in the section of the slip layer onto which the radiation of the laser light source is oriented or was oriented; forming a section of the ceramic main part in the slip layer in a sinter-free manner; optionally repeating the steps of producing a slip layer, orienting the radiation, evaporating the liquid phase, and forming a section of the main part in a sinter-free manner until the ceramic main part is provided; and separating the ceramic main part from the slip.

A sintered MnZn ferrite body containing main components comprising 53.30-53.80% by mol of Fe calculated as Fe.sub.2O.sub.3, 6.90-9.50% by mol Zn calculated as ZnO, and the balance of Mn calculated as MnO, and sub-components comprising 0.003-0.020 parts by mass of Si calculated as SiO.sub.2, more than 0 parts and 0.35 parts or less by mass of Ca calculated as CaCO.sub.3, 0.30-0.50 parts by mass of Co calculated as Co.sub.3O.sub.4, 0.03-0.10 parts by mass of Zr calculated as ZrO.sub.2, and 0-0.05 parts by mass of Ta calculated as Ta.sub.2O.sub.5, pre 100 parts by mass in total of the main components (calculated as the oxides), and having an average crystal grain size of 3 μm or more and less than 8 μm and a density of 4.65 g/cm.sup.3 or more.

The invention relates to a coloured zirconia ceramic dental mill blank having fluorescing properties, processes of production such a mill blank and uses thereof, in particular for producing zirconia ceramic dental restorations.

The dental mill blank having a shape allowing the dental mill blank to be attached or fixed to a machining device, the dental mill blank comprising a porous zirconia material, the porous zirconia material comprising the oxides Zr oxide calculated as ZrO.sub.2: from about 80 to about 97 wt.-%, Al oxide calculated as Al.sub.2O.sub.3: from about 0 to about 0.15 wt.-%, Y oxide calculated as Y.sub.2O.sub.3: from about 1 to about 10 wt.-%, Bi oxide calculated as Bi.sub.2O.sub.3: from about 0.01 to about 0.20 wt.-%, Tb oxide calculated as Tb.sub.2O.sub.3: from about 0.01 to about 0.8 wt.-%, and optionally one or two of the following oxides: Er oxide calculated as Er.sub.2O.sub.3: from about 0.01 to about 3.0 wt.-%, Mn oxide calculated as MnO.sub.2: from about 0.0001 to about 0.08 wt.-%, wt.-% with respect to the weight of the porous zirconia material.

A method for manufacturing a ceramic article including (i) a step of irradiating a powder mainly containing a ceramic material with an energy beam to sinter or melt and solidify the powder into a solidified portion, wherein the step is repeated a predetermined number of times to sequentially bond the resulting solidified portions together to obtain a ceramic modeling object, (ii) a step of allowing the shaped ceramic object to absorb a metal component-containing liquid that contains inorganic particles containing a metal element; and (iii) a step of heating the shaped ceramic object that has absorbed the metal component-containing liquid.

The present invention provides an energy storage device comprising a cathode region or other element. The device has a major active region comprising a plurality of first active regions spatially disposed within the cathode region. The major active region expands or contracts from a first volume to a second volume during a period of a charge and discharge. The device has a catholyte material spatially confined within a spatial region of the cathode region and spatially disposed within spatial regions not occupied by the first active regions. In an example, the catholyte material comprises a lithium, germanium, phosphorous, and sulfur (“LGPS”) containing material configured in a polycrystalline state. The device has an oxygen species configured within the LGPS containing material, the oxygen species having a ratio to the sulfur species of 1:2 and less to form a LGPSO material. The device has a protective material formed overlying exposed regions of the cathode material to substantially maintain the sulfur species within the catholyte material. Also included is a novel dopant configuration of the Li.sub.aMP.sub.bS.sub.c (LMPS) [M=Si, Ge, and/or Sn] containing material.

A transparent complex oxide sintered body is manufactured by sintering a compact in an inert atmosphere or vacuum, and HIP treating the sintered compact, provided that the compact is molded from a source powder based on a rare earth oxide: (Tb.sub.xY.sub.1-x).sub.2O.sub.3 wherein 0.4≤x≤0.6, and the compact, when heated in air from room temperature at a heating rate of 15° C./min, exhibits a weight gain of at least y % due to oxidative reaction, y being determined by the formula: y=2x+0.3. The sintered body has a long luminescent lifetime as a result of controlling the valence of Tb ion.

The object of the present invention is to provide a large-sized gallium nitride-based sintered body having a small oxygen amount and high strength, a large-sized gallium nitride-based sintered body having a small oxygen amount and containing a dopant, to obtain a highly crystalline gallium nitride thin film which has become a n-type or p-type semiconductor by a dopant, and methods for producing them.

A gallium nitride-based sintered body, which has an oxygen content of at most 1 atm % and an average particle size (D50) of at least 1 μm and at most 150 μm.