The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

An optical component according to an embodiment of the present invention includes a translucent substrate, one or more intermediate layers stacked on at least one of an incident surface and an exit surface of the substrate, and a surface layer stacked on an outermost layer of the one or more intermediate layers, the surface layer containing diamond-like carbon as a main component. At least one intermediate layer among the one or more intermediate layers contains silicon as a main component, and the intermediate layer containing silicon as a main component has an oxygen content of 10 atomic % or less.

An optical component according to an embodiment of the present invention includes a translucent substrate, one or more intermediate layers stacked on at least one of an incident surface and an exit surface of the substrate, and a surface layer stacked on an outermost layer of the one or more intermediate layers, the surface layer containing diamond-like carbon as a main component. At least one intermediate layer among the one or more intermediate layers contains silicon as a main component, and the intermediate layer containing silicon as a main component has an oxygen content of 10 atomic % or less.

The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

Various embodiments of the present invention are directed towards a system and method relating to depositing vapor in a sample. For example, a device includes a vapor source chamber configured to contain a vapor source material to generate vapor. An activation chamber is configured to contain a sample. The activation chamber is in fluid communication with the vapor source chamber to receive the vapor. A permeable separator divides the vapor source chamber and the activation chamber, and isolates the sample in the activation chamber while allowing vapor to pass between the vapor source chamber and the activation chamber. The device is sealable and configured to apply vacuum to the vapor and sample, to cause deposition of the vapor into the pumice stone samples.

A method for producing a high-temperature includes forming a dimensionally stable green body of the high-temperature component from a matrix material and pyrolizing the matrix material. A material mixture of the matrix material with a carbon material is used to form the high-temperature component, and a thermoplastic is used as the matrix material. The green body is formed by additive manufacturing.

An apparatus for coating specimens includes a reaction chamber and a plurality of reaction modules in the reaction chamber for containing specimens to be coated, where each reaction module includes a module inlet and a module outlet. A plurality of conduits are configured to be in fluid communication with at least one gas source external to the reaction chamber, and each of the conduits terminates in one of the reaction modules for delivery of gaseous reagents to the specimens to be coated. The module outlets are in fluid communication with the reaction chamber for expulsion of gaseous reaction products from the reaction modules.