A process for making low resistivity CVC silicon carbide. Applicants have developed a better process for adding nitrogen to silicon carbide which has the safety economic advantages of doping with N.sub.2 with the ease of N.sub.2 release advantages of using NH.sub.3. Preferred embodiments of the present invention include a NH.sub.3 generator with a source of H.sub.2 and a source of N.sub.2 and an arc discharge apparatus adapted to produce NH.sub.3 gas from a combination of the H.sub.2 and N.sub.2 sources.

Provided is a silicon carbide-tantalum carbide composite having excellent durability. A silicon carbide-tantalum carbide composite (1) includes: a body (10) whose surface layer is at least partly formed of a first silicon carbide layer (12); a tantalum carbide layer (20); and a second silicon carbide layer (13). The tantalum carbide layer (20) is disposed over the first silicon carbide layer (12). The second silicon carbide layer (13) is interposed between the tantalum carbide layer (20) and the first silicon carbide layer (12). The second silicon carbide layer (13) has a C/Si composition ratio of not less than 1.2 as measured by X-ray photoelectron spectroscopy. The second silicon carbide layer (13) has a peak intensity ratio G/D of not less than 1.0 between the G-band and D-band of carbon as measured by Raman spectroscopy.

Provided is a silicon carbide-tantalum carbide composite having excellent durability. A silicon carbide-tantalum carbide composite (1) includes: a body (10) whose surface layer is at least partly formed of a first silicon carbide layer (12); a tantalum carbide layer (20); and a second silicon carbide layer (13). The tantalum carbide layer (20) is disposed over the first silicon carbide layer (12). The second silicon carbide layer (13) is interposed between the tantalum carbide layer (20) and the first silicon carbide layer (12). The second silicon carbide layer (13) has a C/Si composition ratio of not less than 1.2 as measured by X-ray photoelectron spectroscopy. The second silicon carbide layer (13) has a peak intensity ratio G/D of not less than 1.0 between the G-band and D-band of carbon as measured by Raman spectroscopy.

The present invention relates to a chemical vapor deposition chamber article. The present invention further relates to a method of processing an article of a chemical vapor deposition chamber for manufacturing semiconductor components, as well as chemical vapor deposition chamber article obtained through such a method. In a first aspect of the invention, there is provided, a chemical vapor deposition chamber article such as a wafer carrier, for manufacturing semiconductor components, said chamber article having a body and a surface comprised of silicon carbide, characterized in that said surface is provided with a protective layer at least on parts of said surface which are subject to parasitic deposition during said manufacturing of said semiconductor components in said chamber, and wherein said protective layer comprises an oxidized surface.

The present invention relates to a chemical vapor deposition chamber article. The present invention further relates to a method of processing an article of a chemical vapor deposition chamber for manufacturing semiconductor components, as well as chemical vapor deposition chamber article obtained through such a method. In a first aspect of the invention, there is provided, a chemical vapor deposition chamber article such as a wafer carrier, for manufacturing semiconductor components, said chamber article having a body and a surface comprised of silicon carbide, characterized in that said surface is provided with a protective layer at least on parts of said surface which are subject to parasitic deposition during said manufacturing of said semiconductor components in said chamber, and wherein said protective layer comprises an oxidized surface.

A method of repairing an article including cleaning a repair area, wherein the repair area comprises a ceramic matrix composite; and depositing a ceramic material in the cleaned repair area using laser assisted chemical vapor deposition. Also disclosed is a repaired ceramic composite produced by this method.

A method of repairing an article including cleaning a repair area, wherein the repair area comprises a ceramic matrix composite; and depositing a ceramic material in the cleaned repair area using laser assisted chemical vapor deposition. Also disclosed is a repaired ceramic composite produced by this method.

A surface-coated cutting tool according to the present invention includes a tool body and a hard coating layer including a complex carbonitride layer containing a small amount of chlorine and (Ti.sub.(1-x)Zr.sub.xyHf.sub.x(1-y))(N.sub.(1-z)C.sub.z) (0.10≤x≤0.90, 0<y≤1.0, 0.08<z<0.60), a ZrHf and C content ratios in cycles, a cycle distance between a maximum ZrHf content point and an adjacent minimum ZrHf content point and a cycle distance between a maximum C content point and an adjacent minimum C content point are 5 to 100 nm, an average value of content ratio differences Δx and Δz is 0.02 or more, a distance between the maximum ZrHf content point and the maximum C content point is ⅕ or less of the distance between a maximum content point and a minimum content point of adjacent ZrHf components, and a composition fluctuation structure is 10% or more.

A surface-coated cutting tool according to the present invention includes a tool body and a hard coating layer including a complex carbonitride layer containing a small amount of chlorine and (Ti.sub.(1-x)Zr.sub.xyHf.sub.x(1-y))(N.sub.(1-z)C.sub.z) (0.10≤x≤0.90, 0<y≤1.0, 0.08<z<0.60), a ZrHf and C content ratios in cycles, a cycle distance between a maximum ZrHf content point and an adjacent minimum ZrHf content point and a cycle distance between a maximum C content point and an adjacent minimum C content point are 5 to 100 nm, an average value of content ratio differences Δx and Δz is 0.02 or more, a distance between the maximum ZrHf content point and the maximum C content point is ⅕ or less of the distance between a maximum content point and a minimum content point of adjacent ZrHf components, and a composition fluctuation structure is 10% or more.

The invention relates to a part made of silicon-based ceramic material or silicon-based ceramic matrix composite (CMC) material comprising an environmental barrier coating (EBC), said coating (12, 13) comprising a bonding layer (12) deposited on the surface of the ceramic material or ceramic matrix composite (CMC), said bonding layer (12) being topped by one or more layers together forming a multifunctional barrier structure (13), characterised in that the bonding layer (12) has at its interface with the multifunctional structure a polycrystalline silica layer (12) or sub-layer (12b).