A silicon carbide-graphite composite is described, including (i) interior bulk graphite material and (ii) exterior silicon carbide matrix material, wherein the interior bulk graphite material and exterior silicon carbide matrix material inter-penetrate one another at an interfacial region therebetween, and wherein graphite is present in inclusions in the exterior silicon carbide matrix material. Such material may be formed by contacting a precursor graphite article with silicon monoxide (SiO) gas under chemical reaction conditions that are effective to convert an exterior portion of the precursor graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween. Such silicon carbide-graphite composite is usefully employed in applications such as implant hard masks in manufacturing solar cells or other optical, optoelectronic, photonic, semiconductor and microelectronic products, as well as in ion implantation system materials, components, and assemblies, such as beam line assemblies, beam steering lenses, ionization chamber liners, beam stops, and ion source chambers.

A silicon carbide-graphite composite is described, including (i) interior bulk graphite material and (ii) exterior silicon carbide matrix material, wherein the interior bulk graphite material and exterior silicon carbide matrix material inter-penetrate one another at an interfacial region therebetween, and wherein graphite is present in inclusions in the exterior silicon carbide matrix material. Such material may be formed by contacting a precursor graphite article with silicon monoxide (SiO) gas under chemical reaction conditions that are effective to convert an exterior portion of the precursor graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween. Such silicon carbide-graphite composite is usefully employed in applications such as implant hard masks in manufacturing solar cells or other optical, optoelectronic, photonic, semiconductor and microelectronic products, as well as in ion implantation system materials, components, and assemblies, such as beam line assemblies, beam steering lenses, ionization chamber liners, beam stops, and ion source chambers.

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

A method of altering a surface of a ceramic matrix composite to aid in nodule removal is described. A fiber preform comprising a framework of ceramic fibers is heated to a temperature at or above a melting temperature of silicon. During the heating, the fiber preform is infiltrated with a molten material comprising silicon. After the infiltration, the fiber preform is cooled, and the infiltrated fiber preform is exposed to a gas comprising nitrogen during cooling. Silicon nitride may be formed by a reaction of free (unreacted) silicon at or near the surface of the infiltrated fiber preform with the nitrogen. Thus, a ceramic matrix composite having a surface configured for easy nodule removal is formed. Any silicon nodules formed on the surface during cooling may be removed without machining or heat treatment.

A method of altering a surface of a ceramic matrix composite to aid in nodule removal is described. A fiber preform comprising a framework of ceramic fibers is heated to a temperature at or above a melting temperature of silicon. During the heating, the fiber preform is infiltrated with a molten material comprising silicon. After the infiltration, the fiber preform is cooled, and the infiltrated fiber preform is exposed to a gas comprising nitrogen during cooling. Silicon nitride may be formed by a reaction of free (unreacted) silicon at or near the surface of the infiltrated fiber preform with the nitrogen. Thus, a ceramic matrix composite having a surface configured for easy nodule removal is formed. Any silicon nodules formed on the surface during cooling may be removed without machining or heat treatment.

A silicon carbide-graphite composite is described, including (i) interior bulk graphite material and (ii) exterior silicon carbide matrix material, wherein the interior bulk graphite material and exterior silicon carbide matrix material inter-penetrate one another at an interfacial region therebetween, and wherein graphite is present in inclusions in the exterior silicon carbide matrix material. Such material may be formed by contacting a precursor graphite article with silicon monoxide (SiO) gas under chemical reaction conditions that are effective to convert an exterior portion of the precursor graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween. Such silicon carbide-graphite composite is usefully employed in applications such as implant hard masks in manufacturing solar cells or other optical, optoelectronic, photonic, semiconductor and microelectronic products, as well as in ion implantation system materials, components, and assemblies, such as beam line assemblies, beam steering lenses, ionization chamber liners, beam stops, and ion source chambers.

A silicon carbide-graphite composite is described, including (i) interior bulk graphite material and (ii) exterior silicon carbide matrix material, wherein the interior bulk graphite material and exterior silicon carbide matrix material inter-penetrate one another at an interfacial region therebetween, and wherein graphite is present in inclusions in the exterior silicon carbide matrix material. Such material may be formed by contacting a precursor graphite article with silicon monoxide (SiO) gas under chemical reaction conditions that are effective to convert an exterior portion of the precursor graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween. Such silicon carbide-graphite composite is usefully employed in applications such as implant hard masks in manufacturing solar cells or other optical, optoelectronic, photonic, semiconductor and microelectronic products, as well as in ion implantation system materials, components, and assemblies, such as beam line assemblies, beam steering lenses, ionization chamber liners, beam stops, and ion source chambers.

A method of preparing a ceramic matrix composite (CMC) article is disclosed. The method includes depositing a first layer of a coating composition directly onto a surface of a silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite substrate, with the coating composition comprising a rare earth silicate and a sintering aid. The method also includes heating the first layer to sinter the coating composition to form an environmental barrier coating (EBC) adjacent the SiC/SiC composite and a transition layer integrally bonded to and between the substrate and the EBC. CMC articles prepared according to the method, including coated turbomachine components, are also disclosed.

A method of preparing a ceramic matrix composite (CMC) article is disclosed. The method includes depositing a first layer of a coating composition directly onto a surface of a silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite substrate, with the coating composition comprising a rare earth silicate and a sintering aid. The method also includes heating the first layer to sinter the coating composition to form an environmental barrier coating (EBC) adjacent the SiC/SiC composite and a transition layer integrally bonded to and between the substrate and the EBC. CMC articles prepared according to the method, including coated turbomachine components, are also disclosed.