C04B41/4558

METHOD FOR MANUFACTURING AN OSSEOINTEGRATIVE SURGICAL IMPLANT
20240382291 · 2024-11-21 ·

Embodiments of the present invention provide an osseointegrative implant and related tools, components and fabrication techniques for surgical bone fixation and dental restoration purposes. In one embodiment an all-ceramic single-stage threaded or press-fit implant is provided having finely detailed surface features formed by ceramic injection molding and/or spark plasma sintering of a powder compact or green body comprising finely powdered zirconia. In another embodiment a two-stage threaded implant is provided having an exterior shell or body formed substantially entirely of ceramic and/or CNT-reinforced ceramic composite material. The implant may include one or more frictionally anisotropic bone-engaging surfaces. In another embodiment a densely sintered ceramic implant is provided wherein, prior to sintering, the porous debound green body is exposed to ions and/or particles of silver, gold, titanium, zirconia, YSZ, ?-tricalcium phosphate, hydroxyapatite, carbon, carbon nanotubes, and/or other particles which remain lodged in the implant surface after sintering. Optionally, at least the supragingival portions of an all-ceramic implant are configured to have high translucence in the visible light range. Optionally, at least the bone-engaging portions of an all-ceramic implant are coated with a fused layer of titanium oxide.

METHOD FOR MANUFACTURING AN OSSEOINTEGRATIVE SURGICAL IMPLANT
20240382291 · 2024-11-21 ·

Embodiments of the present invention provide an osseointegrative implant and related tools, components and fabrication techniques for surgical bone fixation and dental restoration purposes. In one embodiment an all-ceramic single-stage threaded or press-fit implant is provided having finely detailed surface features formed by ceramic injection molding and/or spark plasma sintering of a powder compact or green body comprising finely powdered zirconia. In another embodiment a two-stage threaded implant is provided having an exterior shell or body formed substantially entirely of ceramic and/or CNT-reinforced ceramic composite material. The implant may include one or more frictionally anisotropic bone-engaging surfaces. In another embodiment a densely sintered ceramic implant is provided wherein, prior to sintering, the porous debound green body is exposed to ions and/or particles of silver, gold, titanium, zirconia, YSZ, ?-tricalcium phosphate, hydroxyapatite, carbon, carbon nanotubes, and/or other particles which remain lodged in the implant surface after sintering. Optionally, at least the supragingival portions of an all-ceramic implant are configured to have high translucence in the visible light range. Optionally, at least the bone-engaging portions of an all-ceramic implant are coated with a fused layer of titanium oxide.

SILICON-BASED MATERIALS CONTAINING BORON
20180079689 · 2018-03-22 ·

A ceramic component is provided that includes a silicon-based layer comprising a silicon-containing material (e.g., a silicon metal and/or a silicide) and a boron-doped refractory compound, such as about 0.001% to about 85% by volume of the boron-doped refractory compound (e.g., about 1% to about 60% by volume of the boron-doped refractory compound). A coated component is also provided that includes a CMC component defining a surface; a bond coating directly on the surface of the CMC component, with the bond coating comprises a silicon-containing material and a boron-doped refractory compound (e.g., about 0.1% to about 25% of the boron-doped refractory compound); a thermally grown oxide layer on the bond coating; and an environmental barrier coating on the thermally grown oxide layer.

SILICON-BASED MATERIALS CONTAINING BORON
20180079689 · 2018-03-22 ·

A ceramic component is provided that includes a silicon-based layer comprising a silicon-containing material (e.g., a silicon metal and/or a silicide) and a boron-doped refractory compound, such as about 0.001% to about 85% by volume of the boron-doped refractory compound (e.g., about 1% to about 60% by volume of the boron-doped refractory compound). A coated component is also provided that includes a CMC component defining a surface; a bond coating directly on the surface of the CMC component, with the bond coating comprises a silicon-containing material and a boron-doped refractory compound (e.g., about 0.1% to about 25% of the boron-doped refractory compound); a thermally grown oxide layer on the bond coating; and an environmental barrier coating on the thermally grown oxide layer.

SILICON-BASED MATERIALS CONTAINING INDIUM AND METHODS OF FORMING THE SAME
20180079688 · 2018-03-22 ·

A ceramic component is generally provided that includes a silicon-based layer comprising a silicon-containing material (e.g., a silicon metal and/or a silicide) and about 0.001% to about 85% of an In-containing compound. For example, the silicon-based layer can be a bond coating directly on the surface of the substrate. Alternatively or additionally, the silicon-based layer can be an outer layer defining a surface of the substrate, with an environmental barrier coating on the surface of the substrate. Gas turbine engines are also generally provided that include such a ceramic component.

SILICON-BASED MATERIALS CONTAINING INDIUM AND METHODS OF FORMING THE SAME
20180079688 · 2018-03-22 ·

A ceramic component is generally provided that includes a silicon-based layer comprising a silicon-containing material (e.g., a silicon metal and/or a silicide) and about 0.001% to about 85% of an In-containing compound. For example, the silicon-based layer can be a bond coating directly on the surface of the substrate. Alternatively or additionally, the silicon-based layer can be an outer layer defining a surface of the substrate, with an environmental barrier coating on the surface of the substrate. Gas turbine engines are also generally provided that include such a ceramic component.

SILICON COMPOSITIONS CONTAINING BORON AND METHODS OF FORMING THE SAME
20180079687 · 2018-03-22 ·

A composition is generally provided that includes a silicon-containing material (e.g., silicon metal and/or a silicide) and a boron-doped refractory compound, such as about 0.001% to about 85% by volume of the boron-doped refractory compound (e.g., about 1% to about 60% by volume). In one embodiment, a bond coating on a surface of a ceramic component is generally provided with the bond coating including such a composition, with the silicon-containing material is silicon metal.

SILICON COMPOSITIONS CONTAINING BORON AND METHODS OF FORMING THE SAME
20180079687 · 2018-03-22 ·

A composition is generally provided that includes a silicon-containing material (e.g., silicon metal and/or a silicide) and a boron-doped refractory compound, such as about 0.001% to about 85% by volume of the boron-doped refractory compound (e.g., about 1% to about 60% by volume). In one embodiment, a bond coating on a surface of a ceramic component is generally provided with the bond coating including such a composition, with the silicon-containing material is silicon metal.

SILICON COMPOSITIONS CONTAINING BORON AND METHODS OF FORMING THE SAME
20180079649 · 2018-03-22 ·

A compound is provided that has the formula: Ln.sub.4-x-zB.sub.xD.sub.zM.sub.2-n-yA.sub.nB.sub.yO.sub.9, where Ln comprises La, Ce, Pr, Nd, Pm, Sm, or a mixture thereof; x is 0 to about 2; D is La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof, where: D is not equal to Ln; if D is La, Ce, Pr, Nd, Pm, Sm, or a mixture thereof, then z is 0 to less than 4; if D is Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof, then z is 0 to about 2; M comprises Ga, Al, or a combination thereof; A comprises Fe, In, or a combination thereof; n is 0 to about 1; y is 0 to about 1; and x+y is greater than 0. In one embodiment, a composition is generally provided that includes a silicon-containing material and such a boron-doped refractory compound.

SILICON COMPOSITIONS CONTAINING BORON AND METHODS OF FORMING THE SAME
20180079649 · 2018-03-22 ·

A compound is provided that has the formula: Ln.sub.4-x-zB.sub.xD.sub.zM.sub.2-n-yA.sub.nB.sub.yO.sub.9, where Ln comprises La, Ce, Pr, Nd, Pm, Sm, or a mixture thereof; x is 0 to about 2; D is La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof, where: D is not equal to Ln; if D is La, Ce, Pr, Nd, Pm, Sm, or a mixture thereof, then z is 0 to less than 4; if D is Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof, then z is 0 to about 2; M comprises Ga, Al, or a combination thereof; A comprises Fe, In, or a combination thereof; n is 0 to about 1; y is 0 to about 1; and x+y is greater than 0. In one embodiment, a composition is generally provided that includes a silicon-containing material and such a boron-doped refractory compound.