Patent classifications
C04B41/4558
METHOD FOR MANUFACTURING AN OSSEOINTEGRATIVE SURGICAL IMPLANT
Embodiments of the present invention provide an osseointegrative implant and related tools, components and fabrication techniques for surgical bone fixation and dental restoration purposes. In one embodiment an all-ceramic single-stage threaded or press-fit implant is provided having finely detailed surface features formed by ceramic injection molding and/or spark plasma sintering of a powder compact or green body comprising finely powdered zirconia. In another embodiment a two-stage threaded implant is provided having an exterior shell or body formed substantially entirely of ceramic and/or CNT-reinforced ceramic composite material. The implant may include one or more frictionally anisotropic bone-engaging surfaces. In another embodiment a densely sintered ceramic implant is provided wherein, prior to sintering, the porous debound green body is exposed to ions and/or particles of silver, gold, titanium, zirconia, YSZ, ?-tricalcium phosphate, hydroxyapatite, carbon, carbon nanotubes, and/or other particles which remain lodged in the implant surface after sintering. Optionally, at least the supragingival portions of an all-ceramic implant are configured to have high translucence in the visible light range. Optionally, at least the bone-engaging portions of an all-ceramic implant are coated with a fused layer of titanium oxide.
METHOD FOR MANUFACTURING AN OSSEOINTEGRATIVE SURGICAL IMPLANT
Embodiments of the present invention provide an osseointegrative implant and related tools, components and fabrication techniques for surgical bone fixation and dental restoration purposes. In one embodiment an all-ceramic single-stage threaded or press-fit implant is provided having finely detailed surface features formed by ceramic injection molding and/or spark plasma sintering of a powder compact or green body comprising finely powdered zirconia. In another embodiment a two-stage threaded implant is provided having an exterior shell or body formed substantially entirely of ceramic and/or CNT-reinforced ceramic composite material. The implant may include one or more frictionally anisotropic bone-engaging surfaces. In another embodiment a densely sintered ceramic implant is provided wherein, prior to sintering, the porous debound green body is exposed to ions and/or particles of silver, gold, titanium, zirconia, YSZ, ?-tricalcium phosphate, hydroxyapatite, carbon, carbon nanotubes, and/or other particles which remain lodged in the implant surface after sintering. Optionally, at least the supragingival portions of an all-ceramic implant are configured to have high translucence in the visible light range. Optionally, at least the bone-engaging portions of an all-ceramic implant are coated with a fused layer of titanium oxide.
SILICON-BASED MATERIALS CONTAINING BORON
A ceramic component is provided that includes a silicon-based layer comprising a silicon-containing material (e.g., a silicon metal and/or a silicide) and a boron-doped refractory compound, such as about 0.001% to about 85% by volume of the boron-doped refractory compound (e.g., about 1% to about 60% by volume of the boron-doped refractory compound). A coated component is also provided that includes a CMC component defining a surface; a bond coating directly on the surface of the CMC component, with the bond coating comprises a silicon-containing material and a boron-doped refractory compound (e.g., about 0.1% to about 25% of the boron-doped refractory compound); a thermally grown oxide layer on the bond coating; and an environmental barrier coating on the thermally grown oxide layer.
SILICON-BASED MATERIALS CONTAINING BORON
A ceramic component is provided that includes a silicon-based layer comprising a silicon-containing material (e.g., a silicon metal and/or a silicide) and a boron-doped refractory compound, such as about 0.001% to about 85% by volume of the boron-doped refractory compound (e.g., about 1% to about 60% by volume of the boron-doped refractory compound). A coated component is also provided that includes a CMC component defining a surface; a bond coating directly on the surface of the CMC component, with the bond coating comprises a silicon-containing material and a boron-doped refractory compound (e.g., about 0.1% to about 25% of the boron-doped refractory compound); a thermally grown oxide layer on the bond coating; and an environmental barrier coating on the thermally grown oxide layer.
SILICON-BASED MATERIALS CONTAINING INDIUM AND METHODS OF FORMING THE SAME
A ceramic component is generally provided that includes a silicon-based layer comprising a silicon-containing material (e.g., a silicon metal and/or a silicide) and about 0.001% to about 85% of an In-containing compound. For example, the silicon-based layer can be a bond coating directly on the surface of the substrate. Alternatively or additionally, the silicon-based layer can be an outer layer defining a surface of the substrate, with an environmental barrier coating on the surface of the substrate. Gas turbine engines are also generally provided that include such a ceramic component.
SILICON-BASED MATERIALS CONTAINING INDIUM AND METHODS OF FORMING THE SAME
A ceramic component is generally provided that includes a silicon-based layer comprising a silicon-containing material (e.g., a silicon metal and/or a silicide) and about 0.001% to about 85% of an In-containing compound. For example, the silicon-based layer can be a bond coating directly on the surface of the substrate. Alternatively or additionally, the silicon-based layer can be an outer layer defining a surface of the substrate, with an environmental barrier coating on the surface of the substrate. Gas turbine engines are also generally provided that include such a ceramic component.
SILICON COMPOSITIONS CONTAINING BORON AND METHODS OF FORMING THE SAME
A composition is generally provided that includes a silicon-containing material (e.g., silicon metal and/or a silicide) and a boron-doped refractory compound, such as about 0.001% to about 85% by volume of the boron-doped refractory compound (e.g., about 1% to about 60% by volume). In one embodiment, a bond coating on a surface of a ceramic component is generally provided with the bond coating including such a composition, with the silicon-containing material is silicon metal.
SILICON COMPOSITIONS CONTAINING BORON AND METHODS OF FORMING THE SAME
A composition is generally provided that includes a silicon-containing material (e.g., silicon metal and/or a silicide) and a boron-doped refractory compound, such as about 0.001% to about 85% by volume of the boron-doped refractory compound (e.g., about 1% to about 60% by volume). In one embodiment, a bond coating on a surface of a ceramic component is generally provided with the bond coating including such a composition, with the silicon-containing material is silicon metal.
SILICON COMPOSITIONS CONTAINING BORON AND METHODS OF FORMING THE SAME
A compound is provided that has the formula: Ln.sub.4-x-zB.sub.xD.sub.zM.sub.2-n-yA.sub.nB.sub.yO.sub.9, where Ln comprises La, Ce, Pr, Nd, Pm, Sm, or a mixture thereof; x is 0 to about 2; D is La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof, where: D is not equal to Ln; if D is La, Ce, Pr, Nd, Pm, Sm, or a mixture thereof, then z is 0 to less than 4; if D is Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof, then z is 0 to about 2; M comprises Ga, Al, or a combination thereof; A comprises Fe, In, or a combination thereof; n is 0 to about 1; y is 0 to about 1; and x+y is greater than 0. In one embodiment, a composition is generally provided that includes a silicon-containing material and such a boron-doped refractory compound.
SILICON COMPOSITIONS CONTAINING BORON AND METHODS OF FORMING THE SAME
A compound is provided that has the formula: Ln.sub.4-x-zB.sub.xD.sub.zM.sub.2-n-yA.sub.nB.sub.yO.sub.9, where Ln comprises La, Ce, Pr, Nd, Pm, Sm, or a mixture thereof; x is 0 to about 2; D is La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof, where: D is not equal to Ln; if D is La, Ce, Pr, Nd, Pm, Sm, or a mixture thereof, then z is 0 to less than 4; if D is Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof, then z is 0 to about 2; M comprises Ga, Al, or a combination thereof; A comprises Fe, In, or a combination thereof; n is 0 to about 1; y is 0 to about 1; and x+y is greater than 0. In one embodiment, a composition is generally provided that includes a silicon-containing material and such a boron-doped refractory compound.