Patent classifications
C04B41/4558
HEAT RESISTANT STRUCTURE OF FLYING BODY AND MANUFACTURING METHOD OF HEAT RESISTANT STRUCTURE OF FLYING BODY
The heat resistant structure of the flying body is provided with a tip part and a body part. The tip part is arranged in a front end of the flying body with respect to a direction of travel of the flying body. The body part is arranged in a back direction from the tip part with respect to the direction of travel of the flying body. The tip part is provided with a surface member, a base part, and an insulation member. The surface member is arranged on an outer surface of the tip part and has a melting point higher than a desired temperature. The base part couples the surface member to the body part. The insulation member is arranged between the surface member and the base part., and thermally insulates the base part from the surface member.
HEAT RESISTANT STRUCTURE OF FLYING BODY AND MANUFACTURING METHOD OF HEAT RESISTANT STRUCTURE OF FLYING BODY
The heat resistant structure of the flying body is provided with a tip part and a body part. The tip part is arranged in a front end of the flying body with respect to a direction of travel of the flying body. The body part is arranged in a back direction from the tip part with respect to the direction of travel of the flying body. The tip part is provided with a surface member, a base part, and an insulation member. The surface member is arranged on an outer surface of the tip part and has a melting point higher than a desired temperature. The base part couples the surface member to the body part. The insulation member is arranged between the surface member and the base part., and thermally insulates the base part from the surface member.
Device and method for reinforcing weathered stone relics by using low temperature plasma to activate calcium hydroxide in carbon dioxide atmosphere
The invention provides a device and a method for reinforcing weathered stone relics by using low temperature plasma to activate calcium hydroxide in a carbon dioxide atmosphere. Based on the low temperature plasma physics and the principles of the relics conservation, the invention applies the technology of low temperature plasma to relics conservation, and especially to the reinforcement of weathered stone relics by activating calcium hydroxide. According to the application, using low temperature plasma source loaded with carbon dioxide to active calcium hydroxide can realize the carbonation and precipitation of calcium hydroxide within 1 min-2 min, and reinforce the weathered stone relics. The application has the advantages of safety, high efficiency, non-damage, and no side effects.
INTERMEDIATE COATING FOR HIGH TEMPERATURE ENVIRONMENTS
An article includes a substrate, an intermediate coating on the substrate, and an environmental barrier coating (EBC) on the intermediate coating. The substrate includes a ceramic, ceramic matrix composite (CMC), or superalloy. The EBC includes a rare earth disilicate. When the intermediate coating is at an initial state, such as prior to exposure to an oxidating environment, the intermediate coating includes a bond coat on the substrate and a reactive layer on the bond coat. The bond coat includes silicon, while the reactive layer includes a rare earth monosilicate or rare earth oxide. In response to oxidation of a portion of the silicon of the bond coat to form silicon dioxide, a portion of the rare earth monosilicate or rare earth oxide of the reactive layer is configured to react with at least a portion of the silicon dioxide to form a converted layer that includes a rare earth disilicate.
SLURRY-BASED REACTION BONDED ENVIRONMENTAL BARRIER COATINGS
A method may include oxidizing a surface of a silicon-containing substrate to form a layer including silica on the surface of the silicon-containing substrate. The method also may include depositing, from a slurry including at least one rare earth oxide, a layer including the at least one rare earth oxide on the layer including silicon. The method additionally may include heating at least the layer including silica and the layer including the at least one rare earth oxide to cause the silica and the at least one rare earth oxide to react and form a layer including at least one rare earth silicate.
SLURRY-BASED REACTION BONDED ENVIRONMENTAL BARRIER COATINGS
A method may include oxidizing a surface of a silicon-containing substrate to form a layer including silica on the surface of the silicon-containing substrate. The method also may include depositing, from a slurry including at least one rare earth oxide, a layer including the at least one rare earth oxide on the layer including silicon. The method additionally may include heating at least the layer including silica and the layer including the at least one rare earth oxide to cause the silica and the at least one rare earth oxide to react and form a layer including at least one rare earth silicate.
Method for producing a surface layer on a ceramic matrix composite
A method is provided in which a resin coating is applied to a surface of a preform. The resin coating includes a carbonaceous resin and a particulate. The preform is added to a tooling. The preform, which is positioned in the tooling, is cured. The tooling is removed. The resin coating on the surface of the preform is pyrolyzed to form a resin carbon-char layer on the surface of the preform. The preform and the resin carbon-char layer are infiltrated with silicon to form a ceramic matrix composite (CMC) component including a layer of silicon carbide. During the infiltration, the silicon reacts with carbon in the resin carbon-char layer to form the layer of silicon carbide on the preform.
Method for producing a surface layer on a ceramic matrix composite
A method is provided in which a resin coating is applied to a surface of a preform. The resin coating includes a carbonaceous resin and a particulate. The preform is added to a tooling. The preform, which is positioned in the tooling, is cured. The tooling is removed. The resin coating on the surface of the preform is pyrolyzed to form a resin carbon-char layer on the surface of the preform. The preform and the resin carbon-char layer are infiltrated with silicon to form a ceramic matrix composite (CMC) component including a layer of silicon carbide. During the infiltration, the silicon reacts with carbon in the resin carbon-char layer to form the layer of silicon carbide on the preform.
A CHEMICAL VAPOR DEPOSITION CHAMBER ARTICLE
The present invention relates to a chemical vapor deposition chamber article. The present invention further relates to a method of processing an article of a chemical vapor deposition chamber for manufacturing semiconductor components, as well as chemical vapor deposition chamber article obtained through such a method. In a first aspect of the invention, there is provided, a chemical vapor deposition chamber article such as a wafer carrier, for manufacturing semiconductor components, said chamber article having a body and a surface comprised of silicon carbide, characterized in that said surface is provided with a protective layer at least on parts of said surface which are subject to parasitic deposition during said manufacturing of said semiconductor components in said chamber, and wherein said protective layer comprises an oxidized surface.
A CHEMICAL VAPOR DEPOSITION CHAMBER ARTICLE
The present invention relates to a chemical vapor deposition chamber article. The present invention further relates to a method of processing an article of a chemical vapor deposition chamber for manufacturing semiconductor components, as well as chemical vapor deposition chamber article obtained through such a method. In a first aspect of the invention, there is provided, a chemical vapor deposition chamber article such as a wafer carrier, for manufacturing semiconductor components, said chamber article having a body and a surface comprised of silicon carbide, characterized in that said surface is provided with a protective layer at least on parts of said surface which are subject to parasitic deposition during said manufacturing of said semiconductor components in said chamber, and wherein said protective layer comprises an oxidized surface.