The present disclosure relates to a tantalum carbide-coated carbon material and a method for manufacturing the same, and an aspect of the present disclosure provides a tantalum carbide-coated carbon material including: a carbon substrate; and a tantalum carbide coating layer formed on the carbon substrate by a CVD method, wherein microcracks included in the tantalum carbide coating layer have a maximum width of 1.5 μm to 2.6 μm.

Disclosed is a multi-phase abradable coating including a ceramic matrix and a dislocator phase.

Disclosed is a multi-phase abradable coating including a ceramic matrix and a dislocator phase.

The present disclosure relates to a tantalum carbide coating material, and more specifically, to a tantalum carbide coating material comprising: a carbon substrate; and a tantalum carbide coating formed on the carbon substrate, wherein a thermal expansion coefficient difference between the carbon substrate and the tantalum carbide coating is 1.0×10.sup.−6/° C. or more.

Coated components, along with methods of their formation, are provided. The coated component includes a ceramic substrate having a surface; an intermediate layer on the surface of the ceramic substrate; and an environmental barrier coating on the intermediate layer. The intermediate layer includes a carbon-sink material that inhibits accumulation of free carbon from a carbon-containing species within the intermediate layer, the ceramic substrate, or both.

Coated components, along with methods of their formation, are provided. The coated component includes a ceramic substrate having a surface; an intermediate layer on the surface of the ceramic substrate; and an environmental barrier coating on the intermediate layer. The intermediate layer includes a carbon-sink material that inhibits accumulation of free carbon from a carbon-containing species within the intermediate layer, the ceramic substrate, or both.

A method includes forming a crystallized metal carbide undercoat on a surface of a carbon-carbon composite substrate. The method further includes forming an overcoat on a surface of the undercoat. The overcoat includes a plurality of crystallized ultra-high melting point overcoat layers. Each overcoat layer is sequentially formed by applying a mixture to a surface of an underlying layer and heating the mixture. The mixture includes a plurality of ultra-high melting point refractory ceramic particles and a pre-ceramic polymer. The mixture is heated to a heat treatment temperature to pyrolyze the pre-ceramic polymer and form the overcoat layer in an inert atmosphere or under vacuum. As a result, the overcoat layer includes a crystallized ultra-high melting point polymer-derived ceramic matrix that includes the plurality of ultra-high melting point refractory ceramic particles.

A method includes forming a crystallized metal carbide undercoat on a surface of a carbon-carbon composite substrate. The method further includes forming an overcoat on a surface of the undercoat. The overcoat includes a plurality of crystallized ultra-high melting point overcoat layers. Each overcoat layer is sequentially formed by applying a mixture to a surface of an underlying layer and heating the mixture. The mixture includes a plurality of ultra-high melting point refractory ceramic particles and a pre-ceramic polymer. The mixture is heated to a heat treatment temperature to pyrolyze the pre-ceramic polymer and form the overcoat layer in an inert atmosphere or under vacuum. As a result, the overcoat layer includes a crystallized ultra-high melting point polymer-derived ceramic matrix that includes the plurality of ultra-high melting point refractory ceramic particles.

A method of manufacturing a material including tantalum carbide (TaC) with a particularly low impurity content, and a TaC material formed by the method are provided. The method includes preparing a base material, and forming a TaC coating layer on a surface of the base material at a temperature of 1,600° C. to 2,500° C.

A method of manufacturing a material including tantalum carbide (TaC) with a particularly low impurity content, and a TaC material formed by the method are provided. The method includes preparing a base material, and forming a TaC coating layer on a surface of the base material at a temperature of 1,600° C. to 2,500° C.