Provided is a dielectric ceramic composition including a first component and a second component, wherein the first component comprises an oxide of Ca of 0.00 mol % to 35.85 mol % an oxide of Sr of 0.00 mol % to 47.12 mol %, an oxide of Ba of 0.00 mol % to 51.22 mol %, an oxide of Ti of 0.00 mol % to 17.36 mol %, an oxide of Zr of 0.00 mol % to 17.36 mol %, an oxide of Sn of 0.00 mol % to 2.60 mol %, an oxide of Nb of 0.00 mol % to 35.32 mol %, an oxide of Ta of 0.00 mol % to 35.32 mol %, and an oxide of V of 0.00 mol % to 2.65 mol %, and the second component includes at least (a) an oxide of Mn of 0.005% by mass to 3.500% by mass and (b) an oxide of Cu and/or an oxide of Ru.

The present invention relates to a conductive porous ceramic substrate and a method of manufacturing the same, and more particularly to a conductive porous ceramic substrate, in which a porous ceramic substrate used as a chuck or stage for fixing a thin semiconductor wafer substrate or display substrate through vacuum adsorption is imparted with antistatic performance so as to prevent the generation of static electricity, and a method of manufacturing the same.

A zirconia powder in which when a stabilizer is Y.sub.2O.sub.3, a content thereof is 1.4 mol % or more and less than 2.0 mol %; when the stabilizer is Er.sub.2O.sub.3, a content thereof is 1.4 mol % or more and 1.8 mol % or less; when the stabilizer is Yb.sub.2O.sub.3, a content thereof is 1.4 mol % or more and 1.8 mol % or less; and when the stabilizer is CaO, a content thereof is 3.5 mol % or more and 4.5 mol % or less; and in a range of 10 nm or more and 200 nm or less in a pore distribution, a peak top diameter of a pore volume distribution is 20 nm or more and 120 nm or less, a pore volume is 0.2 ml/g or more and less than 0.5 ml/g, and a pore distribution width is 30 nm or more and 170 nm or less.

A zirconia powder containing a stabilizer, and having a specific surface area of 20 m.sup.2/g or more and 60 m.sup.2/g or less and a particle diameter D.sub.50 of 0.1 μm or more and 0.7 μm or less, in which in a range of 10 nm or more and 200 nm or less in a pore distribution based on a mercury intrusion method, a peak top diameter in a pore volume distribution is 20 nm or more and 85 nm or less, a pore volume is 0.2 ml/g or more and less than 0.5 ml/g, and a pore distribution width is 40 nm or more and 105 nm or less.

A center flare tip assembly (16) and plenum flare tip assembly (18) with arms (20), having the outside of the center flare tip assembly (16), both inside and outside of the tips (18), the outside of the arms (20), and/or adjacent features of the flare tip (12) are covered with a high emissivity thermal layer (14) with an emissivity greater than 0.85. This reduces flare metal temperatures by thirty percent (30%) or greater, and increases flare life by two (2) to five (5) times current life.

A multilayer electronic component includes a body including a dielectric layer and an internal electrode; and an external electrode disposed on the body and connected to the internal electrode, wherein the dielectric layer includes first and second grains, wherein the first grain has a core-shell structure including a shell having an atomic ratio of 2*Sn/(Ba+Ti+Sn) or 2*Hf/(Ba+Ti+Hf) to be 1.0% or more and 5.0% or less, and a core having an atomic ratio of 2*Sn/(Ba+Ti+Sn) and 2*Hf/(Ba+Ti+Hf) to be less than 1.0%, and the second grain has an atomic ratio of 2*Sn/(Ba+Ti+Sn) and 2*Hf/(Ba+Ti+Hf) to be less than 1.0%, and wherein an area occupied by the first grain in an entire area of the first and second grains is 28.3-82.3%.

A grain-oriented M-type hexagonal ferrite has the formula MeFe.sub.12O.sub.19, and a dopant effective to provide planar magnetic anisotropy and magnetization in a c-plane, or a cone anisotropy, in the hexagonal crystallographic structure wherein Me is Sr.sup.+, Ba.sup.2+ or Pb.sup.2+, and wherein greater than 30%, preferably greater than 80%, of c-axes of the ferrite grains are aligned perpendicular to the c-plane.

Paste compositions for additive manufacturing and methods for the same are provided. The paste composition may include an organic vehicle, and one or more powders dispersed in the organic vehicle. The organic vehicle may include a solvent, a polymeric binder, a thixotropic additive, and a dispersant. The organic vehicle may be configured to provide the paste composition with a suitable viscosity. The organic vehicle may also be configured to provide a stable paste composition for a predetermined period of time.

Embodiments relate to an improved hydroflux assisted densification process that introduces a transport phase (formed by the introduction of water during the process to suppress melting temperatures) for sintering, the transport phase being a non-aqueous solution. The process can facilitate sintering at low temperature ranges (at or below 300° C.) to yield densification>90% without the need for additional post-processing steps that otherwise would be needed if conventional processes were used. Control of the pressures and water content used during the process can enhance densification mechanisms related to dissolution-reprecipitation, allowing for a greater range of compositional spectra of materials that can be densified, a reduction of the amount of transport phase needed, a reduction of impurities and an improvement of properties in the densified material. Certain hydrated acetate powders can be used to generate a hydroxide mixture flux that is better for the low-temperature densification process.

A dielectric ceramic composition includes a barium titanate (BaTiO.sub.3)-based base material main ingredient and an accessory ingredient, the accessory ingredient including dysprosium (Dy) and praseodymium (Pr) as first accessory ingredients. A content of the Pr satisfies 0.233 mol≤Pr≤0.699 mol, based on 100 mol of the barium titanate base material main ingredient.