Patent classifications
C04B2235/3284
Binder for injection moulding compositions
A binder for an injection moulding composition including: from 40 to 55 volume percent of a polymeric base, from 35 to 45 volume percent of a mixture of waxes or a mixture of wax and palm oil, and at least 5 volume percent of at least one surfactant, wherein the polymeric base is formed of copolymers of ethylene and methacrylic or acrylic acid, copolymers of ethylene and propylene and/or maleic anhydride-grafted polypropylene, and polymers soluble in isopropyl alcohol, propyl alcohol and/or turpentine, and chosen from the group including a cellulose acetate butyrate, a polyvinyl butyral and a copolyamide, the respective quantities of the binder components being such that their sum is equal to 100 volume percent of the binder.
Manganese Ferrite Nanoparticles for Use as MRI Contrast Agents and Magnetohypothermia Agents
The present disclosure is directed to methods of Quantum Spin Engineering of spinel superparamagnetic ferrite nanoparticles (SMFNs) for MRI contrast agents and for magnetohyperthermia agents. Using the methods herein, the magnetic properties of the SMFNs can be controlled by changing the amount of 3d-transition element cations having unpaired electrons in the 3d orbital that occupy the octahedral sites of the spinel crystal form, to form mixed spinels, while anions in the spinels can be utilized to magnetically couple the cations utilizing intra-crystalline angles determined by ion sizes and crystal structure, and further tuning of other critical parameters is provided. The mixed spinels disclosed herein provide enhanced MRI contrast agents and improved magnetohyperthermia agents with lower toxicity and safety concerns, while the production methods disclosed herein have lower cost.
METHOD FOR MANUFACTURING MULTILAYER VARISTOR AND MULTILAYER VARISTOR
A method for manufacturing a multilayer varistor includes: a first step including providing a multilayer stack in which a plurality of green sheet layers, each containing a Zn oxide powder as a main component and a Pr oxide powder as a sub-component, and a plurality of internal electrode paste layers, each containing a Pd powder, are alternately stacked; and a second step including forming a sintered compact, including an internal electrode inside, by baking the multilayer stack. The second step includes: a first sub-step including baking the multilayer stack by setting an oxygen concentration in an atmosphere at 1000 ppm by volume or less while increasing a temperature from 500° C. to 800° C.; and a second sub-step including baking, after the first sub-step, the multilayer stack by setting the oxygen concentration in the atmosphere at 1000 ppm by volume or more while increasing the temperature to a maximum allowable temperature.
Silicate glass, method for preparing silicate glass-ceramics by using the silicate glass, and method for preparing nano lithium disilicate glass-ceramics by using the silicate glass
Provided is a silicate glass, a method for preparing a silicate glass-ceramics by using the silicate glass, and a method for preparing a lithium disilicate glass-ceramics by using the silicate glass, and more particularly, to a method for preparing a glass-ceramics that has a nanosize of 0.2 to 0.5 μm and contains lithium disilicate and silicate crystalline phases. A nano lithium disilicate glass-ceramics containing a SiO.sub.2 crystalline phase includes: a glass composition including 70 to 85 wt % SiO.sub.2, 10 to 13 wt % Li.sub.2O, 3 to 7 wt % P.sub.2O.sub.5 working as a nuclei formation agent, 0 to 5 wt % Al.sub.2O.sub.3 for increasing a glass transition temperature and a softening point and enhancing chemical durability of glass, 0 to 2 wt % ZrO.sub.2, 0.5 to 3 wt % CaO for increasing a thermal expansion coefficient of the glass, 0.5 to 3 wt % Na.sub.2O, 0.5 to 3 wt % K.sub.2O, and 1 to 2 wt % colorants, and 0 to 2.0 wt % mixture of MgO, ZnO, F, and La.sub.2O.sub.3.
Dielectric ceramic composition and multilayer ceramic capacitor comprising same
A dielectric ceramic composition and a multilayer ceramic capacitor including the same are provided, the dielectric ceramic composition includes a BaTiO.sub.3-based base material main component and a subcomponent, wherein the subcomponent includes zinc oxide (ZnO) as a first subcomponent, and the content of the ZnO is 0.1 mol % or more and less than 0.4 mol % with respect to 100 mol % of the base material main component.
Laminated ceramic sintered body board for electronic device, electronic device, chip resistor, and method for manufacturing chip resistor
A laminated ceramic sintered body board for an electronic device includes a ceramic sintered body board and a flattening film that is provided on an upper surface of the ceramic sintered body board and contains a thermally conductive filler, and the flattening film contains a thermally conductive filler.
LAMINATED CERAMIC SINTERED BODY BOARD FOR ELECTRONIC DEVICE, ELECTRONIC DEVICE, CHIP RESISTOR, AND METHOD FOR MANUFACTURING CHIP RESISTOR
A laminated ceramic sintered body board for an electronic device includes a ceramic sintered body board and a flattening film that is provided on an upper surface of the ceramic sintered body board and contains a thermally conductive filler, and the flattening film contains a thermally conductive filler.
Mn—Zn—O sputtering target and production method therefor
Provided are a Mn—Zn—O sputtering target that can be used for DC sputtering and a production method therefor. The Mn—Zn—O sputtering target has a chemical composition containing Mn, Zn, O, and an element X (X is one or two elements selected from the group consisting of W and Mo). A surface to be sputtered of the target has an arithmetic mean roughness Ra of 1.5 μm or less or a maximum height Ry of 10 μm or less.
OXIDE SINTERED BODY, SPUTTERING TARGET AND OXIDE SEMICONDUCTOR FILM
An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.
SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME
A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.