(i) a step of disposing a powder that includes an absorber absorbing light of a wavelength included in a laser beam to be irradiated and silicon dioxide as a main component; (ii) a step of sintering or melting and solidifying the powder by irradiating the powder with a laser beam; and (iii) a step of heat-treating a shaped object formed by repeating the steps (i) and (ii) at 1470° C. or more and less than 1730° C.

[Problem]

To support the metal without segregation on the zirconia mill blank for dental cutting and machining which has been adjusted to a hardness that enables to cut and machine by calcining at a low temperature.

[Solution]

A zirconia mill blank for dental cutting and machining is prepared by A preparing method of a zirconia mill blank for dental cutting and machining, comprising an impregnation step of impregnating a porous zirconia molded body with an impregnating solution containing at least one metal ion and at least one precipitant, and a deposition step of decomposing the precipitant in the porous zirconia molded body to deposit a metal compound.

A method for producing a ceramic complex includes: preparing a raw material mixture that contains 5% by mass or more and 40% by mass or less of first rare earth aluminate fluorescent material particles containing an activating element and a first rare earth element different from the activating element, 0.1% by mass or more and 32% by mass or less of oxide particles containing a second rare earth element, and the balance of aluminum oxide particles, relative to 100% by mass of the total amount of the first rare earth aluminate fluorescent material particles, the oxide particles, and the aluminum oxide particles; preparing a molded body of the raw material mixture; and obtaining a sintered body by calcining the molded body in a temperature range of 1,550° C. or higher and 1,800° C. or lower.

A (GaMe).sub.2O.sub.3 ternary alloy material, its preparation method and application in a solar-blind ultraviolet photodetector are provided. The (GaMe).sub.2O.sub.3 ternary alloy material of the present invention is formed by solid solution of Ga.sub.2O.sub.3 and Me.sub.2O.sub.3 in a molar ratio of 99:1 to 50:50, wherein the Me is any one of Lu, Sc, or Y. The (GaMe).sub.2O.sub.3 ternary alloy material of the present invention can be used to prepare the active layer of a solar-blind ultraviolet photodetector. In the present invention, the band gap of Me.sub.2O.sub.3 is higher than that of Ga.sub.2O.sub.3, and Ga.sup.3+ ions in Ga.sub.2O.sub.3 are partially replaced by Me.sup.3+ ions to obtain a higher band gap (GaMe).sub.2O.sub.3 ternary alloy material to reduce the dark current of the device and promote the blue shift of the cut-off wavelength to within 280 nm.

The object of the present invention is to provide a large-sized gallium nitride-based sintered body having a small oxygen amount and high strength, a large-sized gallium nitride-based sintered body having a small oxygen amount and containing a dopant, to obtain a highly crystalline gallium nitride thin film which has become a n-type or p-type semiconductor by a dopant, and methods for producing them.

A gallium nitride-based sintered body, which has an oxygen content of at most 1 atm % and an average particle size (D50) of at least 1 μm and at most 150 μm.

[Problem]

A technique for imparting high translucency which is similar to an enamel of a natural tooth to a zirconia sintered body, has been required.

[Solution]

To provide a zirconia mill blank for dental cutting and machining, containing, an yttrium compound and an indium compound as stabilizers, wherein, an amount of the yttrium compound is within a range of 3.0 mol % to 6.0 mol % in terms of oxide, an amount of the indium compound is within a range of 0.2 mol % to 3.0 mol % in terms of oxide, and a total amount of the yttrium compound and the indium compound is within a range of 5.5 mol % to 7.0 mol % in terms of oxide.

Focus is on zinc oxide itself, which is a base material for a zinc oxide varistor (laminated varistor), wherein specified quantities of additives are added to a zinc oxide powder having a crystallite size of 20 to 50 nm, grain diameter of 15 to 60 nm found using the specific surface area BET method, untamped density of 0.38 to 0.50 g/cm.sup.3, and tap density of 0.50 to 1.00 g/cm.sup.3. This allows securing of uniformity, high compactness, and high electrical conductivity of a zinc oxide sintered body, and provision of a zinc oxide varistor having high surge resistance.

A ceramic electronic component includes: a body including dielectric layers and internal electrodes; and external electrodes disposed on the body and connected to the internal electrodes, wherein the dielectric layer includes a plurality of dielectric crystal grains, and at least one of the plurality of dielectric crystal grains has a core-double shell structure, the double shell includes a first shell surrounding at least a portion of the core and a second shell surrounding at least a portion of the first shell, the first shell includes a first element, one or more of Sn, Sb, Ge, Si, Ga, In, or Zr, and the second shell includes a second element, one or more of Ca or Sr.

Disclosed are a dielectric ceramic includes a plurality of crystal grain bulks including a ceramic, and a grain boundary between the plurality of crystal grain bulks, wherein a dopant is segregated in the grain boundary.

The inventive concept relates to a complex for detecting gas responsive to gas to be tested. The complex for the detecting the gas contains a nanostructure made of an oxide semiconductor, and a Terbium (Tb) additive supported on the nanostructure.