Components having an environmental barrier coating and a sintered layer overlying the environmental barrier coating, the sintered layer defining an outer surface having a lower surface roughness than the environmental barrier coating. The sintered layer is formed from a slurry applied to and then sintered on the environmental barrier coating. The sintered layer comprises a primary material, at least one sintering aid dissolved in the primary material, and optionally a secondary material. The sintering aid contains at least one doping composition. The primary material is a rare earth disilicate or a rare earth monosilicate and is doped with the doping composition so as to be either a doped rare earth disilicate or a doped rare earth monosilicate. The optional secondary material is a reaction product of the primary material and any of the sintering aid not dissolved in the primary material.

Isopipes (13) for making glass sheets using a fusion process are provided. The isopipes are made from alumina materials which have low levels of the elements of group IVB of the periodic chart, i.e., Ti, Zr, and Hf, as well as low levels of Sn. In this way, the alumina isopipes can be used with glasses that contain tin (e.g., as a fining agent or as the result of the use of tin electrodes for electrical heating of molten glass) without generating unacceptable levels of tin-containing defects in the glass sheets, specifically, at the sheets' fusion lines. The alumina isopipes disclosed herein are especially beneficial when used with tin-containing glasses that exhibit low tin solubility, e.g., glasses that have (RO+R.sub.2O)/Al.sub.2O.sub.3 ratios between 0.9 and 1.1, where, in mole percent on an oxide basis, (RO+R.sub.2O) is the sum of the concentrations of the glass' alkaline earth and alkali metal oxides and Al.sub.2O.sub.3 is the glass' alumina concentration.

Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of bismuth can be added into specific sites in the crystal structure of the synthetic garnet in order to boost certain properties, such as the dielectric constant and magnetization. Accordingly, embodiments of the disclosed materials can be used in high frequency applications, such as in base station antennas.

Process for preparing a porous monolith comprising between 10% and 100% by weight of a semiconductor relative to the total weight of the porous monolith, which process comprises the following steps: a) a first aqueous suspension containing polymer particles is prepared; b) a second aqueous suspension containing particles of least one inorganic semiconductor is prepared; c) the two aqueous suspensions prepared in steps a) and b) are mixed in order to obtain a paste; d) a heat treatment of the paste obtained in step c) is carried out in order to obtain the monolith with multimodal porosity.

An oxide semiconductor film contains In, Ga, and Sn at respective atomic ratios of 0.01≤Ga/(In+Ga+Sn)≤0.30 . . . (1), 0.01≤Sn/(In+Ga+Sn)≤0.40 . . . (2), and 0.55≤In/(In+Ga+Sn)≤0.98 . . . (3), and a rare-earth element X at an atomic ratio of 0.03≤X/(In+Ga+Sn+X)≤0.25 . . . (4).

A manganese oxide contains M1, optionally M2, Mn and O. M1 is selected from the group consisting of In, Sc, Y, Dy, Ho, Er, Tm, Yb and Lu. M2 is different from M1, and M2 is selected from the group consisting of Bi, In, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. These ceramic materials are hexagonal in structure, and provide superior materials for gas separation and oxygen storage.

A sputtering target including a sintered body: the sintered body including: indium oxide doped with Ga or indium oxide doped with Al, and a positive tetravalent metal in an amount of exceeding 100 at. ppm and 1100 at. ppm or less relative to the total of Ga and indium, or Al and indium, the crystal structure of the sintered body substantially including a bixbyite structure of indium oxide.

In one embodiment, a method includes forming a powder having a composition with the formula: A.sub.hB.sub.iC.sub.jO.sub.12, where h is 3±l 0%, i is 2=10%, j is 3±10%, A includes one or more rare earth elements, B includes aluminum and/or gallium, and C includes aluminum and/or gallium. The method additionally includes consolidating the powder to form an optically transparent ceramic, and applying at least one thermodynamic process condition during the consolidating to reduce oxygen and/or thermodynamically reversible defects in the ceramic. In another embodiment, a scintillator includes (Gd.sub.3-a-cY.sub.a)x(Ga.sub.5-bAl.sub.b).sub.yO.sub.12D.sub.c, where a is from about 0.05-2, b is from about 1-3, x is from about 2.8-3.2, y is from about 4.8-5.2, c is from about 0.003-0.3, and D is a dopant, and where the scintillator is an optically transparent ceramic scintillator having physical characteristics of being formed from a ceramic powder consolidated in oxidizing atmospheres.

A sputtering target having a one-piece top coat comprising a mixture of oxides of zinc, tin, and optionally gallium, characterized in that said one-piece top coat has a length of at least 80 cm; a method for forming such a sputtering target and the use of such a target for forming films.

[Objective] To provide a ceramic emitter that exhibits high radiation intensity and excellent wavelength selectivity.

[Solution] A ceramic emitter includes a polycrystalline body that has a garnet structure represented by a compositional formula R.sub.3Al.sub.5O.sub.12 (R: rare-earth element) or R.sub.3Ga.sub.5O.sub.12 (R: rare-earth element) and has pores with a porosity of 20-40%. The pores have a portion where the pores are connected to one another but not linearly continuous, inside the polycrystalline body.