A composite ceramic including: a lithium garnet major phase; and a grain growth inhibitor minor phase, as defined herein. Also disclosed is a method of making composite ceramic, pellets and tapes thereof, a solid electrolyte, and an electrochemical device including the solid electrolyte, as defined herein.

A piezoelectric material contains: a first component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; a second component which is a crystal other than a rhombohedral crystal in a single composition, has a Curie temperature Tc2 higher than Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; and a third component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc3 equal to or higher than Tc2, and is a lead-free-system composite oxide that has a perovskite-type structure and is different from the first component. When a molar ratio of the third component to the sum of the first component and the third component is α and α×Tc3+(1−α)×Tc1 is Tc4, |Tc4−Tc2| is 50° C. or lower.

A method of forming a solid, dense, hermetic lithium-ion electrolyte membrane comprises combing an amorphous, glassy, or low melting temperature solid reactant with a refractory oxide reactant to form a mixture, casting the mixture to form a green body, and sintering the green body to form a solid membrane. The resulting electrolyte membranes can be incorporated into lithium-ion batteries.

The invention relates to a refractory product, a batch for producing the product, a method for producing the product, and a use of the refractory product.

Provided are: a MnZn-based ferrite which allows to have a low magnetic core loss and to suppress a time-dependent change of magnetic property under a high-temperature environment by a control of ambient oxygen concentration and an increase of the magnetic core loss, and a method for manufacturing the same. The MnZn-based ferrite is characterized in that Fe ranges from 53.25 mol % or more to 54.00 mol % or less on the basis of Fe.sub.2O.sub.3, Zn ranges from 2.50 mol % or more to 8.50 mol % or less on the basis of ZnO and Mn is the remainder on the basis of MnO, Si ranges from more than 0.001 mass % to less than 0.02 mass % on the basis of SiO.sub.2, Ca ranges from more than 0.04 mass % to less than 0.4 mass % on the basis of CaCO.sub.3, Co is less than 0.5 mass % on the basis of Co.sub.3O.sub.4, Bi is less than 0.05 mass % on the basis of Bi.sub.2O.sub.3, Ta is less than 0.05 mass % on the basis of Ta.sub.2O.sub.5, Nb is less than 0.05 mass % on the basis of Nb.sub.2O.sub.5, Ti is less than 0.3 mass % on the basis of TiO.sub.2, and Sn is less than 0.3 mass % on the basis of SnO.sub.2, and note that the converted total amount of Ta.sub.2O.sub.5 and Nb.sub.2O.sub.5 is less than 0.05 mass % and the converted total amount of TiO.sub.2 and SnO.sub.2 is less than 0.3 mass %.

A sintered Ni ferrite body having a composition comprising, calculated as oxide, 47.0-48.3% by mol of Fe.sub.2O.sub.3, 14.5% or more and less than 25% by mol of ZnO, 8.2-10.0% by mol of CuO, and more than 0.6% and 2.5% or less by mol of CoO, the balance being NiO and inevitable impurities, and having an average crystal grain size of more than 2.5 μm and less than 5.5 μm.

The aim of the present invention lies in providing a dielectric composition which has a relatively high dielectric constant of 800 or greater, and which has relatively low dielectric loss of 4% or less when a DC bias of at least 8 V/ym is applied, and also in providing a dielectric element employing said dielectric composition, an electronic component, and a laminated electronic component. A dielectric composition having a main component represented by (Bi.sub.aNa.sub.bSr.sub.cBa.sub.d) (α.sub.xTi.sub.1-x) O.sub.3, characterized in that a is at least one selected from Zr and Sn; and a, b, c, d and x satisfy the following: 0.140≦a≦0.390, 0.140≦b≦0.390, 0.200≦c≦0.700, 0.020≦d≦0.240, 0.020≦x≦0.240 and 0.950<a+b+c+d≦1.050.

The present disclosure relates to a method for obtaining lead-free piezoelectric materials, including: Step S100, adjusting the T/O phase boundary of a first lead-free piezoelectric material: for the first lead-free piezoelectric material, adjusting the T/O phase boundary between the tetragonal phase T and the orthorhombic phase O to be near the room temperature by doping; Step S200, further adjusting the C/T phase boundary and the O/R phase boundary: further adjusting the C/T phase boundary between the cubic paraelectric phase C and the tetragonal phase T, and the O/R phase boundary between the orthorhombic phase O and the rhombohedral phase R by doping, so as to enable the C/T phase boundary and the O/R phase boundary to approach the T/O phase boundary; and Step S300, obtaining second lead-free piezoelectric materials: obtaining multiple second lead-free piezoelectric materials with different piezoelectric constants d.sub.33 and different Curie temperatures T.sub.C in the process.

The present disclosure relates to a precursor solution for the preparation of a ceramic of the BZT-αBXT type, where X is selected from Ca, Sn, Mn, and Nb, and α is a molar fraction selected in the range between 0.10 and 0.90, said solution comprising: 1) at least one barium precursor compound; 2) a precursor compound selected from the group consisting of at least one calcium compound, at least one tin compound, at least one manganese compound, and at least one niobium compound; 3) at least one anhydrous precursor compound of zirconium; 4) at least one anhydrous precursor compound of titanium; 5) a solvent selected from the group consisting of a polyol and mixtures of a polyol and a secondary solvent selected from the group consisting of alcohols, carboxylic acids, ketones, and mixtures thereof; and 6) a chelating agent, as well as method of using the same.

[Object] To provide a sputtering target for producing an oxide semiconductor thin film having high properties, which serves as a substitute for IGZO, and a method of producing the same.

[Solving Means] In order to achieve the above-mentioned object, a sputtering target according to an embodiment of the present invention includes: an oxide sintered body including indium, tin, and germanium, in which an atom ratio of germanium with respect to a total of indium, tin, and germanium is 0.07 or more and 0.40 or less, and an atom ratio of tin with respect to the total of indium, tin, and germanium is 0.04 or more and 0.60 or less. As a result, it is possible to achieve transistor characteristics of having mobility of 10 cm.sup.2/Vs or more.