A ferrite composition comprises a main component and a subcomponent. The main component includes 32.0 to 46.4 mol % of iron oxide in terms of Fe.sub.2O.sub.3, 4.4 to 14.0 mol % of copper oxide in terms of CuO, and 8.4 to 56.9 mol % of zinc oxide in terms of ZnO. The subcomponent includes 0.53 to 11.00 parts by weight of a silicon compound in terms of SiO.sub.2, 0.1 to 12.8 parts by weight of a tin compound in terms of SnO.sub.2, and 0.5 to 7.0 parts by weight of a bismuth compound in terms of Bi.sub.2O.sub.3, with respect to 100 parts by weight of the main component.

Provided are an oxide semiconductor excellent in transparency, mobility, and weatherability, etc., and a semiconductor device having the oxide semiconductor, a p-type semiconductor being realizable in the oxide semiconductor. The oxide semiconductor consists of a composite oxide, which has a crystal structure including a pyrochlore structure, containing at least one or more kinds of elements selected from Nb and Ta, and containing Sn element, and its holes become charge carriers by the condition that Sn.sup.4+/(Sn.sup.2++Sn.sup.4+) which is a ratio of Sn.sup.4+ to a total amount of Sn in the composite oxide is 0.124≤Sn.sup.4+/(Sn.sup.2++Sn.sup.4+)≤0.148.

A target for sputtering which enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell. A oxide sintered body includes an indium oxide and a cerium oxide, and one or more oxide of titanium, zirconium, hafnium, molybdenum and tungsten. The cerium content is 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce), and the content of cerium is equal to or lower than 9% by atom, as an atomicity ratio of Ce/(In+Ce). The oxide sintered body has an In.sub.2O.sub.3 phase of a bixbyite structure has a CeO.sub.2 phase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 μm.

Isopipes (13) for making glass sheets using a fusion process are provided. The isopipes are made from alumina materials which have low levels of the elements of group IVB of the periodic chart, i.e., Ti, Zr, and Hf, as well as low levels of Sn. In this way, the alumina isopipes can be used with glasses that contain tin (e.g., as a fining agent or as the result of the use of tin electrodes for electrical heating of molten glass) without generating unacceptable levels of tin-containing defects in the glass sheets, specifically, at the sheets' fusion lines. The alumina isopipes disclosed herein are especially beneficial when used with tin-containing glasses that exhibit low tin solubility, e.g., glasses that have (RO+R.sub.2O)/Al.sub.2O.sub.3 ratios between 0.9 and 1.1, where, in mole percent on an oxide basis, (RO+R.sub.2O) is the sum of the concentrations of the glass' alkaline earth and alkali metal oxides and Al.sub.2O.sub.3 is the glass' alumina concentration.

Process for preparing a porous monolith comprising between 10% and 100% by weight of a semiconductor relative to the total weight of the porous monolith, which process comprises the following steps: a) a first aqueous suspension containing polymer particles is prepared; b) a second aqueous suspension containing particles of least one inorganic semiconductor is prepared; c) the two aqueous suspensions prepared in steps a) and b) are mixed in order to obtain a paste; d) a heat treatment of the paste obtained in step c) is carried out in order to obtain the monolith with multimodal porosity.

An oxide semiconductor film contains In, Ga, and Sn at respective atomic ratios of 0.01≤Ga/(In+Ga+Sn)≤0.30 . . . (1), 0.01≤Sn/(In+Ga+Sn)≤0.40 . . . (2), and 0.55≤In/(In+Ga+Sn)≤0.98 . . . (3), and a rare-earth element X at an atomic ratio of 0.03≤X/(In+Ga+Sn+X)≤0.25 . . . (4).

Colloidal perovskite nanoplatelets can provide a material platform, with tunability extending from the deep UV, across the visible, into the near-IR. The high degree of spectral tunability can be achieved through variation of the cation, metal, and halide composition as well as nanoplatelet thickness.

A sputtering target including a sintered body: the sintered body including: indium oxide doped with Ga or indium oxide doped with Al, and a positive tetravalent metal in an amount of exceeding 100 at. ppm and 1100 at. ppm or less relative to the total of Ga and indium, or Al and indium, the crystal structure of the sintered body substantially including a bixbyite structure of indium oxide.

Provided is a piezoelectric material that is free of lead and potassium, has satisfactory insulation property and piezoelectricity, and has a high Curie temperature. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): General formula (1) (Na.sub.xM.sub.1-y)(Zr.sub.z(Nb.sub.1-wTa.sub.w).sub.y(Ti.sub.1-vSn.sub.v).sub.(1-y-z))O.sub.3 where M represents at least any one of Ba, Sr, and Ca, and relationships of 0.80≦x≦0.95, 0.85≦y≦0.95, 0<z≦0.03, 0≦v<0.2, 0≦w<0.2, and 0.05≦1−y−z≦0.15 are satisfied.

A sputtering target having a one-piece top coat comprising a mixture of oxides of zinc, tin, and optionally gallium, characterized in that said one-piece top coat has a length of at least 80 cm; a method for forming such a sputtering target and the use of such a target for forming films.