Process for preparing a monolith with multimodal porosity

Abstract

Process for preparing a porous monolith comprising between 10% and 100% by weight of a semiconductor relative to the total weight of the porous monolith, which process comprises the following steps: a) a first aqueous suspension containing polymer particles is prepared; b) a second aqueous suspension containing particles of least one inorganic semiconductor is prepared; c) the two aqueous suspensions prepared in steps a) and b) are mixed in order to obtain a paste; d) a heat treatment of the paste obtained in step c) is carried out in order to obtain the monolith with multimodal porosity.

Claims

1. A process comprising preparing a porous monolith comprising between 10% and 100% by weight of a semiconductor relative to the total weight of the porous monolith, and comprising a mesoporous volume, the pore diameter of which is between 0.2 and 50 nm, of 0.05 to 1 ml/g, and a macroporous volume, the pore diameter of which is greater than 50 nm and less than or equal to 5000 nm, of between 0.01 and 1 ml/g, which process comprises the following: a) a first aqueous suspension containing polymer particles is prepared; b) a second aqueous suspension containing particles of least one inorganic semiconductor is prepared; c) the two aqueous suspensions prepared in a) and b) are mixed in order to obtain a paste; d) a heat treatment of the paste obtained in c) is carried out in order to obtain said porous monolith, said heat treatment being carried out under air at a temperature of 300 to 1000° C. for 1 to 72 h.

2. The process as claimed in claim 1, wherein a heat treatment under air of the paste obtained in c) is carried out by carrying out three temperature plateaus, a first plateau carried out at a temperature of 70 to 130° C. for 1 to 12 h, and a second plateau carried out at a temperature of 130° C. to 220° C. for 1 to 12 h, and a third plateau carried out at a temperature of 250 to 700° C. for 1 to 12 h.

3. The process as claimed in claim 1, wherein the aqueous suspension obtained in a) contains 20 to 500 g/l of polymer particles.

4. The process as claimed in claim 1, wherein the aqueous suspension obtained in b) contains 200 to 900 g/l of semiconductor particles.

5. The process as claimed in claim 1, wherein, in c), the weight ratio between the first aqueous suspension containing the polymer particles and the second aqueous suspension containing the semiconductor particles is 0.05 to 1.

6. The process as claimed in claim 1, wherein the polymer particles are in the form of spheres with a diameter of 0.1 to 5 μm.

7. The process as claimed in claim 1, wherein the polymer particles are made of polystyrene.

8. The process as claimed in claim 7, wherein the polystyrene polymer particles are prepared according to the following: i) a solution of ethanol and polyvinylpyrrolidone (PVP) is prepared, which solution is degassed under a nitrogen stream for at least one hour, the weight ratio of ethanol to PVP being 50 to 200; ii) the solution is heated to a temperature of 50 to 90° C.; iii) a reactive mixture of styrene and of a polymerization initiator is prepared, which mixture is degassed under nitrogen for at least one hour, the weight ratio of styrene to initiator being 30 to 300; iv) the reactive mixture obtained in iii) is added to the solution obtained in ii) at a temperature of 50 to 90° C., and the mixture obtained is stirred at a temperature of 50 to 90° C. for 1 hour to 48 hours; v) the suspension obtained in step iv) is washed at least twice with water; vi) the polymer particles are recovered by filtration or centrifugation.

9. The process as claimed in claim 1, wherein the inorganic semiconductor is in the form of a powder.

10. The process as claimed in claim 9, wherein the inorganic semiconductor powder comprises particles with a diameter of 5 to 200 nm.

11. The process as claimed in claim 1, wherein the semiconductor is a metal oxide.

12. The process as claimed in claim 11, wherein the metal of the inorganic semiconductor is an element of groups IB, IIB, IVA, VA, VIA, IVB, VB, VIB, VIIIB or IIIA or a mixture thereof.

13. The process as claimed in claim 12, wherein the semiconductor is Fe.sub.2O.sub.3, SnO, SnO.sub.2, TiO.sub.2, CoO, NiO, ZnO, Cu.sub.2O, CuO, Ce.sub.2O.sub.3, CeO.sub.2, In.sub.2O.sub.3, WO.sub.3, V.sub.2O.sub.5 or a mixture thereof.

14. The process as claimed in claim 1, wherein the semiconductor is doped with one or more metal elements, non-metal elements, or by a mixture of metal and non-metal elements.

15. The process as claimed in claim 14, wherein the semiconductor is doped with V, Ni, Cr, Mo, Fe, Sn, Mn, Co, Re, Nb, Sb, La, Ce, Ta, Ti, C, N, S, F, P or a mixture thereof.

Description

DETAILED DESCRIPTION OF THE INVENTION

Definition

(1) In the remaining text, the groups of chemical elements are given according to the CAS classification (CRC Handbook of Chemistry and Physics, published by CRC Press, editor-in-chief D. R. Lide, 81.sup.st edition, 2000-2001). For example, group VIII according to the CAS classification corresponds to metals of columns 8, 9 and 10 according to the new IUPAC classification.

(2) Description

(3) The invention relates to a process for preparing a monolith with multimodal porosity containing at least one inorganic semiconductor. The preparation process according to the invention uses polymer particles as pore-forming agent. The preparation process uses a powder of one or more precursors of a semiconductor in their oxide form. More particularly, the preparation process according to the invention comprises the following steps: a) a first aqueous suspension containing polymer particles is prepared; b) a second aqueous suspension containing particles of at least one inorganic semiconductor is prepared; c) the two aqueous suspensions prepared in steps a) and b) are mixed in order to obtain a paste; d) a heat treatment of the paste obtained in step c) is carried out in order to obtain the monolith with multimodal porosity.

(4) The steps of the preparation process are described in greater detail below.

(5) Step a) (Preparation of the First Aqueous Suspension)

(6) During step a) of the process for preparing the porous monolith according to the invention, preferably at ambient temperature, a first aqueous suspension containing polymer particles is prepared.

(7) The polymer particles are mainly in the form of spheres with a diameter of between 0.1 and 5 μm, preferably between 0.3 and 3 μm. The particles may be compounds of any polymer; preferably, the particles are composed of optionally modified polystyrene.

(8) The aqueous suspension contains polymer particles in an amount of from 20 to 500 g/l. The aqueous suspension has a pH of between 1 and 10, preferably between 2 and 8.

(9) The polymer particles may be commercially available or synthesized by any method known to those skilled in the art. When the polymer particles are synthesized and are composed of polystyrene, the following process may be carried out: i) a solution of ethanol and polyvinylpyrrolidone (PVP) is prepared, which solution is degassed under a nitrogen stream for at least one hour. The solution optionally contains water. The weight ratio of ethanol to PVP is between 50 and 200; ii) the solution is heated to a temperature of between 50 and 90° C.; iii) a reactive mixture of styrene and of a polymerization initiator is prepared, which mixture is degassed under nitrogen for at least one hour. The weight ratio of styrene to initiator is between 30 and 300. Preferably, the polymerization initiator is 2,2′-azobis(2-methylpropionitrile) (AIBN); iv) the reactive mixture obtained in step iii) is added to the solution obtained in step ii) at a temperature of between 50 and 90° C., with stirring. The reactive system is kept stirring at a temperature of between 50 and 90° C. for 1 hour to 48 hours; v) the suspension obtained is washed at least twice, preferably at least three times, with water, preferably with distilled water, then vi) the polymer particles are recovered by filtration or centrifugation.

(10) Step b) (Preparation of the Second Aqueous Suspension)

(11) During step b) of the process for preparing the porous monolith according to the invention, preferably at ambient temperature, a second aqueous suspension containing particles of at least one inorganic semiconductor is prepared.

(12) Advantageously, said semiconductor is in the form of powder advantageously comprising particles with a diameter of between 5 and 200 nm, preferably between 10 and 100 nm. The inorganic semiconductor is in an oxide form. The semiconductor may be commercially available or synthesized by any method known to those skilled in the art.

(13) The aqueous suspension has an acid pH, preferably of between 0 and 4. Any compound may be used as acid agent; preferably, the acid agent will be nitric acid or hydrochloric acid.

(14) Said aqueous suspension contains the semiconductor in an amount of from 200 to 900 g/l.

(15) According to one variant, said aqueous suspension may also contain, in any proportion, a metal alkoxide, preferably a titanium, silicon or aluminum alkoxide, alone or as a mixture.

(16) Step c) (Mixing of the Suspensions)

(17) During step c) of the process for preparing the porous monolith according to the invention, preferably at ambient temperature, the two aqueous suspensions prepared in steps a) and b) are mixed in order to obtain a paste.

(18) The two suspensions are mixed and then poured into a mold of the shape desired for the final monolith.

(19) The weight ratio between the suspensions containing the polymer particles and containing the semiconductor particles is between 0.05 and 1, preferably between 0.1 and 0.7.

(20) Step d) (Heat Treatment)

(21) During step d) of the process for preparing the porous monolith according to the invention, a heat treatment of the paste obtained in step c) is carried out in order to obtain the porous monolith, said heat treatment being carried out under air at a temperature of between 300 and 1000° C. for 1 to 72 h.

(22) Preferably, the heat treatment under air is carried out in several plateaus, a first plateau carried out at a temperature of between 70 and 130° for 1 to 12 h, and a second plateau carried out at a temperature of between 130° C. and 220° for 1 to 12 h, and a third plateau carried out at a temperature of between 250 and 700° C. for 1 to 12 h. The recourse to three temperature plateaus allows a progressive nature of the heat treatment, avoiding the formation of cracks on the material, while at the same time ensuring good mechanical strength of said material.

(23) The specific heat treatment of the preparation process according to the invention makes it possible to precisely control the final porosity of the monolith by combustion of the polymer particles, then releasing a porosity calibrated by the size of said particles.

(24) The monolith prepared according to the invention contains 10% to 100% by weight of inorganic semiconductor relative to the total weight of porous monolith, preferably from 20% to 100% by weight. The bandgap of the inorganic semiconductors is generally between 0.1 and 4.0 eV. Preferably, the semiconductor is a metal oxide.

(25) According to one variant, the metal of the inorganic semiconductor can be chosen from one or more elements of groups IB, IIB, IVA, VA, VIA, IVB, VB, VIB, VIIIB or IIIA. Preferably, a semiconductor is chosen from Fe.sub.2O.sub.3, SnO, SnO.sub.2, TiO.sub.2, CoO, NiO, ZnO, Cu.sub.2O, CuO, Ce.sub.2O.sub.3, CeO.sub.2, In.sub.2O.sub.3, WO.sub.3, V.sub.2O.sub.5, alone or as a mixture.

(26) The semiconductor can optionally be doped with one or more elements chosen from metal elements, such as for example elements V, Ni, Cr, Mo, Fe, Sn, Mn, Co, Re, Nb, Sb, La, Ce, Ta or Ti, non-metal elements, such as for example C, N, S, F or P, or by a mixture of metal and non-metal elements.

(27) The porous monolith obtained according to the invention has a mesoporous volume, the pore diameter of which is between 0.2 and 50 nm, of between 0.05 and 1 ml/g, preferably between 0.1 and 0.5 ml/g.

(28) The porous monolith obtained according to the invention has a macroporous volume, the pore diameter of which is greater than 50 nm and less than or equal to 5000 nm, preferably greater than 50 nm and less than or equal to 2000 nm, of between 0.01 and 1 ml/g, preferably between 0.05 and 0.5 ml/g.

(29) Without being limiting in nature, the monolith with multimodal porosity prepared according to the invention may advantageously be used in photocatalysis for the production of dihydrogen by dissociation of water.

(30) The following examples illustrate the invention without limiting the scope thereof.

EXAMPLES

Example 1: Monolith A (not in Accordance with the Invention)

(31) A powder of TiO.sub.2 (P25 Degussa, mean particle size 21 nm, Aldrich™) is introduced at ambient temperature into a nitric acid solution at pH=1.5 with stirring, so as to obtain a TiO.sub.2 particle concentration of 750 g/l.

(32) The suspension obtained is poured into a Petri dish 5 cm in diameter and 1 cm high.

(33) A heat treatment is then carried out at 120° C. for 1 h, then 180° C. for 2 h, then 500° C. for 3 h with a temperature increase slope of 0.1° C./min.

(34) A monolith A, based on TiO.sub.2, with a pore population centered about 23 nm and a total pore volume of 0.38 ml/g is finally obtained.

Example 2: Monolith (not in Accordance with the Invention)

(35) A powder of CeO.sub.2 (mean particle size <25 nm, Aldrich™) is introduced at ambient temperature into a nitric acid solution at pH=1.5 with stirring, so as to obtain a CeO.sub.2 particle concentration of 750 g/l.

(36) The suspension obtained is poured into a Petri dish 5 cm in diameter and 1 cm high.

(37) A heat treatment is then carried out at 120° C. for 1 h, then 180° C. for 2 h, then 500° C. for 3 h with a temperature increase slope at 0.1° C./min.

(38) A monolith B, based on CeO.sub.2, with a pore population centered about 31 nm and a total pore volume of 0.45 ml/g is finally obtained.

Example 3: Monolith C (in Accordance with the Invention)

(39) 50 ml of ethanol (absolute, Aldrich™) and 500 mg of PVP (K90, Aldrich™) are mixed in a 250 ml three-necked round-bottomed flask equipped with a magnetic stirrer. The mixture is degassed under a nitrogen stream with stirring for approximately 1 hour at ambient temperature.

(40) Furthermore, 5.5 ml of styrene (purity >99%, Aldrich™) and 75 mg of AIBN (purity 98%, Aldrich™) are mixed in a 25 ml Erlenmeyer flask. The mixture is degassed under a nitrogen stream without stirring for approximately 1 hour at ambient temperature.

(41) The content of the round-bottomed flask is brought to 85° C., then the styrene/AIBN mixture is added with a syringe. The stirring and heating are maintained for 24 h.

(42) The mixture is then washed three times by centrifugation with distilled water and, finally, an amount of water is added to the polystyrene particles obtained in order to have a concentration of 165 g/l in the suspension.

(43) By scanning microscopy analysis, the mean diameter of the spherical polystyrene particles is measured at 1850 nm.

(44) A second suspension is prepared by mixing 10 g of TiO.sub.2 (P25 Degussa, mean particle size 21 nm, Aldrich™) with 13.3 ml of an aqueous solution of nitric acid at pH=1.5 at ambient temperature, so as to obtain a suspension with a TiO.sub.2 concentration of 750 g/l.

(45) The TiO.sub.2 suspension is mixed with 2.5 g of the polystyrene particle suspension, then the mixture is poured into a Petri dish 5 cm in diameter and 1 cm high.

(46) A heat treatment is then carried out at 120° C. for 1 h, then 180° C. for 2 h, then 500° C. for 3 h with a temperature increase slope of 0.1° C./min.

(47) Finally, a monolith C, based on TiO.sub.2, is obtained with a pore population centered about 27 nm and a pore population centered about 1100 nm and a mesoporous volume of 0.38 ml/g and a macroporous volume of 0.29 ml/g, i.e. a total pore volume of 0.67 ml/g.

Example 4: Monolith D (in Accordance with the Invention)

(48) 40 ml of ethanol (absolute, Aldrich™), 10 ml of distilled water and 500 mg of PVP (K90, Aldrich™) are mixed in a 250 ml three-necked round-bottomed flask equipped with a magnetic stirrer. The mixture is degassed under a nitrogen stream with stirring for approximately 1 hour at ambient temperature.

(49) Furthermore, 5.5 ml of styrene (purity >99%, Aldrich™) and 75 mg of AIBN (purity 98%, Aldrich™) are mixed in a 25 ml Erlenmeyer flask. The mixture is degassed under a nitrogen stream without stirring for approximately 1 hour at ambient temperature.

(50) The content of the round-bottomed flask is brought to 75° C., then the styrene/AIBN mixture is added with a syringe. The stirring and the heating are maintained for 24 h.

(51) The mixture is then washed three times by centrifugation with distilled water, and finally an amount of water is added to the polystyrene particles obtained in order to have a concentration of 165 g/l in the suspension.

(52) By scanning microscopy analysis, the average diameter of the spherical polystyrene particles is measured at 640 nm.

(53) A second suspension is prepared by mixing 10 g of TiO.sub.2 (P25 Degussa, mean particle size 21 nm, Aldrich™) with 13.3 ml of an aqueous solution of nitric acid at pH=1.5 at ambient temperature, so as to obtain a suspension with a TiO.sub.2 concentration of 750 g/l.

(54) The TiO.sub.2 suspension is mixed with 8.47 g of the polystyrene particle suspension, then the mixture is poured into a Petri dish 5 cm in diameter and 1 cm high.

(55) A heat treatment is then carried out at 120° C. for 1 h, then 180° C. for 2 h, then 500° C. for 3 h with a temperature increase slope of 0.1° C./min.

(56) Finally, a monolith D, based on TiO.sub.2, is obtained with a pore population centered about 28 nm and a pore population centered about 280 nm and a mesoporous volume of 0.45 ml/g and a macroporous volume of 0.37 ml/g, i.e. a total pore volume of 0.82 ml/g.

Example 5: Monolith E (in Accordance with the Invention)

(57) 40 ml of ethanol (absolute, Aldrich™), 10 ml of distilled water and 500 mg of PVP (K90, Aldrich™) are mixed in a 250 ml three-necked round-bottomed flask equipped with a magnetic stirrer. The mixture is degassed under a nitrogen stream with stirring for approximately 1 hour at ambient temperature.

(58) Furthermore, 5.5 ml of styrene (purity >99%, Aldrich™) and 75 mg of AIBN (purity 98%, Aldrich™) are mixed in a 25 ml Erlenmeyer flask. The mixture is degassed under a nitrogen stream without stirring for approximately 1 hour at ambient temperature.

(59) The content of the round-bottomed flask is brought to 75° C., then the styrene/AIBN mixture is added with a syringe. The stirring and the heating are maintained for 24 h.

(60) The mixture is then washed three times by centrifugation with distilled water, and finally an amount of water is added to the polystyrene particles obtained in order to have a concentration of 165 g/l in the suspension.

(61) By scanning microscopy analysis, the average diameter of the spherical polystyrene particles is measured at 640 nm.

(62) A second suspension is prepared by mixing 10 g of CeO.sub.2 (mean particle size <25 nm, Aldrich™) with 13.3 ml of an aqueous solution of nitric acid at pH=1.5 at ambient temperature, so as obtain a suspension with a CeO.sub.2 concentration of 750 g/l.

(63) The CeO.sub.2 suspension is mixed with 8.52 g of the polystyrene particle suspension, then the mixture is poured into a Petri dish 5 cm in diameter and 1 cm high.

(64) A heat treatment is then carried out at 120° C. for 1 h, then 180° C. for 2 h, then 500° C. for 3 h with a temperature increase slope of 0.1° C./min.

(65) Finally, a monolith E, based on CeO.sub.2, is obtained with a pore population centered about 32 nm and a pore population centered about 290 nm and a mesoporous volume of 0.3 ml/g and a macroporous volume of 0.45 ml/g, i.e. a total pore volume of 0.76 ml/g.

Example 6: Use of the Solids for the Photocatalytic Production of Dihydrogen by Dissociation of Water in the Gas Phase

(66) The monoliths A, B, C, D and E are subjected to a test of photocatalytic production of dihydrogen by dissociation of water in the gas phase in a continuous flow-through bed steel reactor equipped with an optical window made of quartz and with a frit opposite the optical window, on which the solid is deposited.

(67) The monoliths are placed on the frit, their diameter being equal to the diameter of the reactor. The surface irradiated for all the photocatalysts is 8.042477×10.sup.−04 m.sup.2. The tests are carried out at ambient temperature under atmospheric pressure. An argon flow rate of 3 ml/min crosses a water saturator before being distributed in the reactor. The reduction of dihydrogen gas produced resulting from the photocatalytic reduction of the water entrained in the saturator is monitored by an analysis of the effluent every 4 minutes by micro gas chromatography. The UV-visible irradiation source is supplied by a Xe—Hg lamp (Asahi™, MAX302™). The irradiation power is always maintained at 80 W/m.sup.2 for a wavelength range of between 315 and 400 nm. The duration of the test is 20 hours.

(68) The photocatalytic activities are expressed in μmol of dihydrogen produced per hour and per gram of solid. They are average activities over the whole of the duration of the tests. The results are reported in table 1 (below).

(69) TABLE-US-00001 TABLE 1 performance levels of the monoliths in terms of average activity for the production of dihydrogen from a mixture of argon and H.sub.2O in the gas phase Average H.sub.2 activity Photocatalyst (μmol/h/g.sub.TiO2) Monolith A (not in TiO.sub.2 0.21 accordance) Monolith B (not CeO.sub.2 0.13 in accordance) Monolith C (in TiO.sub.2 0.62 accordance) Monolith D (in TiO.sub.2 1.12 accordance) Monolith E (in CeO.sub.2 0.86 accordance)

(70) The activity values show that the solids prepared according to the invention systematically exhibit the best performance levels when they are used in photocatalytic production of dihydrogen by dissociation of water.