Provided is a fluorite-based material thin film including an orthorhombic crystal structure having a symmetric segment and a non-symmetric segment; and at least two domains having different polarization directions. At least one of, the symmetric segment is not present at a wall between the domains, or at least two symmetric segments are consecutive. Also provided is a semiconductor device including the fluorite-based material thin film having an orthorhombic crystal structure. A polarization direction of the fluorite-based material thin film is configured to be changed by a structural transition between the symmetric segment and the non-symmetric segment.

A dielectric composition includes one of BaTiO.sub.3, (Ba,Ca) (Ti,Ca)O.sub.3, (Ba,Ca) (Ti,Zr)O.sub.3, Ba(Ti,Zr)O.sub.3 and (Ba,Ca) (Ti,Sn)O.sub.3, as a main component, a first subcomponent including a rare earth element, and a second subcomponent including at least one of a variable valence acceptor element and a fixed valence acceptor element. When a sum of contents of the rare earth element is defined as DT and a sum of contents of the variable valence acceptor element and the fixed valence acceptor element is defined as AT, (DT/AT)/(Ba+Ca) satisfies more than 0.5 and less than 6.0. In addition, a multilayer electronic component including the dielectric composition is provided.

The inventive concept relates to a complex for detecting gas responsive to gas to be tested. The complex for the detecting the gas contains a nanostructure made of an oxide semiconductor, and a Terbium (Tb) additive supported on the nanostructure.

A method of manufacturing a sputtering target includes the steps of providing a backing structure, providing target material comprising ceramic target material for spraying, subsequently thermal spraying the target material over the backing structure thus providing a target product where at least 40% in mass, for example at least 50% in mass, of the target material including a ceramic target material, and subsequently performing hot isostatic pressing on the target product thus increasing the density of the target material.

Disclosed herein are embodiments of an enhanced resonant frequency hexagonal ferrite material, such as Y-phase hexagonal ferrite material, and methods of manufacturing. In some embodiments, sodium or potassium can be added into the crystal structure of the hexagonal ferrite material in order to achieve improved resonant frequencies in the range of 500 MHz to 1 GHz useful for radiofrequency applications.

A piezoelectric ceramic composition is represented by a composition formula A.sub.xBO.sub.3 and includes potassium sodium niobate containing K and Na that account for 80% or more of an amount of A-site elements and containing Nb that accounts for 70% or more of an amount of B-site elements. The piezoelectric ceramic composition contains Ta and Fe at a B-site.

The invention relates to a scintillation material of rare earth orthosilicate doped with a strong electron-affinitive element and its preparation method and application thereof. The chemical formula of the scintillation material of rare earth orthosilicate doped with the strong electron-affinitive element is: RE.sub.2(1−x−y+δ/2)Ce.sub.2xM.sub.(2y−δ)Si.sub.(1−δ)M.sub.δO.sub.5. In the formula, RE is rare earth ions and M is strong electron-affinitive doping elements; the value of x is 0<x≤0.05, the value of y is 0<y≤0.015, and the value of δ is 0≤δ≤10−4; and M is selected from at least one of tungsten, lead, molybdenum, tellurium, antimony, bismuth, mercury, silver, nickel, indium, thallium, niobium, titanium, tantalum, tin, cadmium, technetium, zirconium, rhenium, and gallium Ga.

A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.

In a piezoelectric ceramic composition including potassium sodium niobate, a transition temperature at which a phase transition between an orthorhombic crystal structure and a tetragonal crystal structure occurs lies in a temperature range of −20° C. or higher and 60° C. or lower. In the piezoelectric ceramic composition, αt/αO is 0.72 or more, where αO represents a coefficient of linear expansion determined when a crystal structure is orthorhombic in the temperature range, and αt represents a coefficient of linear expansion determined when a crystal structure is tetragonal in the temperature range.

An oxide sintered body includes a bixbyite phase represented by In.sub.2O.sub.3, and a garnet phase represented by Y.sub.3In.sub.2Ga.sub.3O.sub.12.