Provided is a fluorite-based material thin film including an orthorhombic crystal structure having a symmetric segment and a non-symmetric segment; and at least two domains having different polarization directions. At least one of, the symmetric segment is not present at a wall between the domains, or at least two symmetric segments are consecutive. Also provided is a semiconductor device including the fluorite-based material thin film having an orthorhombic crystal structure. A polarization direction of the fluorite-based material thin film is configured to be changed by a structural transition between the symmetric segment and the non-symmetric segment.

A ferrite sintered magnet has a ferrite phase having a magnetoplumbite-type crystal structure, and contains at least a metal element A, a metal element R, Fe, Co, Zn, and B. The element A is at least one kind of element selected from the group consisting of Sr, Ba, Ca, and Pb, and essentially includes Ca. The element R is at least one kind of element selected from the group consisting of Bi and rare-earth elements including Y, and essentially includes La. Atomic ratios of the metal elements satisfy the following expressions.

A.sub.1-rR.sub.rFe.sub.xCo.sub.yZn.sub.z  (1)

0.40≤r≤0.70  (2)

8.20≤x≤9.34  (3)

0.05<y≤0.50  (4)

0<z≤0.20  (5)

The content of Si is 0 to 0.60% by mass in terms of SiO.sub.2, and the content of B is 0.01 to 0.70% by mass in terms of B.sub.2O.sub.3.

The invention relates to a scintillation material of rare earth orthosilicate doped with a strong electron-affinitive element and its preparation method and application thereof. The chemical formula of the scintillation material of rare earth orthosilicate doped with the strong electron-affinitive element is: RE.sub.2(1−x−y+δ/2)Ce.sub.2xM.sub.(2y−δ)Si.sub.(1−δ)M.sub.δO.sub.5. In the formula, RE is rare earth ions and M is strong electron-affinitive doping elements; the value of x is 0<x≤0.05, the value of y is 0<y≤0.015, and the value of δ is 0≤δ≤10−4; and M is selected from at least one of tungsten, lead, molybdenum, tellurium, antimony, bismuth, mercury, silver, nickel, indium, thallium, niobium, titanium, tantalum, tin, cadmium, technetium, zirconium, rhenium, and gallium Ga.

Provided is a piezoelectric single crystal-polycrystal ceramic composite, a method of manufacturing the same, and piezoelectric and dielectric application components using the piezoelectric single crystal-polycrystal ceramic composite. The piezoelectric single crystal-polycrystal ceramic composite shows that complexation is carried out by the optimization of a ratio between grain size distributions of a piezoelectric single crystal and polycrystal ceramic grains, and a volume ratio of the contained piezoelectric single crystal so that mass production simultaneously with excellent piezoelectric characteristics of the piezoelectric single crystal can be realized, and the cost of production can be reduced, so the piezoelectric single crystal-polycrystal ceramic composite can be applied to piezoelectric and dielectric application components, like ultrasonic transducers, piezoelectric actuators, piezoelectric sensors, dielectric capacitors, electric field-generating transducers, and electric field and vibration-generating transducers, using the piezoelectric single crystal-polycrystal ceramic composite, and the piezoelectric single crystal-polycrystal ceramic composite can enhance piezoelectric characteristics and competitiveness in prices.

A high permittivity antiferroelectric composition and a manufacturing method thereof aim to provide an antiferroelectric, which has a Pb.sub.xLa.sub.1-x([Zr.sub.1-YSn.sub.Y].sub.ZTi.sub.1-Z) composition, is sintered at low temperatures, and has a high density and a high permittivity.

Methods of manufacturing a ceramic honeycomb body having a honeycomb structure with a matrix of intersecting walls, and a skin disposed on an outer peripheral portion of the matrix where the skin has a first average porosity and the interior portion of the matrix has a second average porosity that is greater than the first average porosity. The methods include coating at least the skin with a fluid formulation containing a sintering aid and subsequently firing the honeycomb structure. In certain embodiments, a glass layer is formed in the skin or in regions of the walls directly adjacent to the skin. In certain embodiments, the coating is applied to a green honeycomb structure, and in other embodiments the coating is applied to a ceramic honeycomb structure. Other honeycomb bodies and methods are described.

A composition includes at least one Pb/Ni/Nb - Pb/Mg/W - Pb/Zr/Ti mixed oxide. A piezoelectric device may be made by providing at least two layers comprising the composition and coated with an outer electrode material; providing a plurality of layers comprising the composition and coated with an inner electrode material; combining or stacking a plurality of layers coated with inner electrode materials between two outer electrodes; and sintering or co-firing the inner electrode materials and outer electrode materials at a temperature at or below about 1000° C.

The invention relates to a scintillation material of rare earth orthosilicate doped with a strong electron-affinitive element and its preparation method and application thereof. The chemical formula of the scintillation material of rare earth orthosilicate doped with the strong electron-affinitive element is: RE.sub.2(1−x−y+δ/2)Ce.sub.2xM.sub.(2y−δ)Si.sub.(1−δ)M.sub.δO.sub.5. In the formula, RE is rare earth ions and M is strong electron-affinitive doping elements; the value of x is 0<x≤0.05, the value of y is 0<y≤0.015, and the value of δ is 0≤δ≤10−4; and M is selected from at least one of tungsten, lead, molybdenum, tellurium, antimony, bismuth, mercury, silver, nickel, indium, thallium, niobium, titanium, tantalum, tin, cadmium, technetium, zirconium, rhenium, and gallium Ga.

Disclosed is a solid state electrolyte comprising a compound of Formula 1
Li.sub.7−a*α−(b−4)*β−xM.sup.a.sub.αLa.sub.3Hf.sub.2−βM.sup.b.sub.βO.sub.12−x−δX.sub.x  (1)
wherein M.sup.a is a cationic element having a valence of a+; M.sup.b is a cationic element having a valence of b+; and X is an anion having a valence of −1, wherein, when M.sup.a includes H, 0≤α≤5, otherwise 0≤α≤0.75, and wherein 0≤β≤1.5, 0≤x≤1.5, and (a*α+(b−4)β+x)>0, 0≤δ≤1.

This ferrite magnet has a ferrite phase having a magnetoplumbite structure, and an orthoferrite phase, and is characterized in that the composition ratios of the total of each metal element A, R, Fe and Me is represented by expression (1) A.sub.1-xR.sub.x(Fe.sub.12-yMe.sub.y).sub.z, (in expression (1), A is at least one element selected from Sr, Ba, Ca and Pb; R is at least one element selected from the rare-earth elements (including Y) and Bi, and includes at least La, and Me is Co, or Co and Zn) and in that the content (m) of the orthoferrite phase is 0<m<28.0 in mol %. The invention makes it possible to achieve a ferrite magnet with increased Br.