Patent classifications
C04B2235/3409
Mold for Glass Forming and Methods for Forming Glass Using a Mold
The present disclosure relates to a mold for glass forming, wherein the mold comprises a ceramic material, and wherein the ceramic material comprises aluminum nitride and hexagonal boron nitride, and wherein the ceramic material comprises from 50 to 80% by weight of aluminum nitride and from 20 to 50% by weight of hexagonal boron nitride, based on the total weight of the ceramic material. The present disclosure further relates to a process for using such molds to form curved glass plates.
Modified NiTa2O6-based Microwave Dielectric Ceramic Material Co-sintered at Low Temperature and Its Preparation Method
The invention belongs to the field of electronic ceramics and its manufacturing, in particular to the modified NiTa.sub.2O.sub.6-based microwave dielectric ceramic material co-sintered at low temperature and its preparation method. Based on the low melting point characteristics of CuO and B.sub.2O.sub.3, and the radius of Cu.sup.2+ ions is similar to that of Ni.sup.2+ and Ta.sup.5+ ions, the chemical general formula of the invention is designed as xCuO-(1-x)NiO-[7.42y+(xy/14.33)]B.sub.2O.sub.3—Ta.sub.2O.sub.5, and the molar content of each component is adjusted from raw materials. The main crystalline phase of NiTa.sub.2O.sub.6 is synthesized at a lower pre-sintering temperature, and NiTa.sub.2O.sub.6-based ceramic material with low-temperature sintering characteristics and excellent microwave dielectric properties are directly synthesized at one time, which broadened the application range in LTCC field.
Multilayer Component and Process for Producing Multilayer Component
A multilayer component and a mathod for producing a multilayer component are disclosed. In an embodiment the multilayer component includes a ceramic main element being a varistor ceramic and at least one metal structure, wherein the metal structure is cosintered, and wherein the main element is doped with a material of the metal structure in such a way that a diffusion of the material from the metal structure into the main element during a sintering operation is reduced.
Ferrite sintered magnet, ferrite particle, bonded magnet and rotating electric machine
This ferrite sintered magnet comprises ferrite phases having a magnetoplumbite type crystal structure. This magnet comprises an element R, an element M, Fe, Co, B, Mn and Cr, the element R is at least one element selected from rare earth elements including Y, the element M is at least one element selected from the group consisting of Ca, Sr and Ba, with Ca being an essential element, and when an atomic composition of metallic elements is represented by R.sub.1-xM.sub.xFe.sub.m-yCo.sub.y, x, y and m satisfy formulae:
0.2≤x≤0.8 (1)
0.1≤y≤0.65 (2)
3≤m<14 (3). Additionally, a content of B is 0.1 to 0.4% by mass in terms of B.sub.2O.sub.3, a content of Mn is 0.15 to 1.02% by mass in terms of MnO, and a content of Cr is 0.02 to 2.01% by mass in terms of Cr.sub.2O.sub.3.
PIEZOELECTRIC DEVICE HAVING AT LEAST ONE PIEZOELECTRIC ELEMENT
Aspects of the present disclosure relate to a piezoelectric device having at least one piezoelectric element, which has a support plane oriented to a force introduction element, wherein in the event of a thermal loading of the piezoelectric device in the support plane, expansion differences between the piezoelectric element and the force introduction element occur. To compensate for shear loadings, at least one transition element is arranged between the piezoelectric element and the force introduction element, the E-module of which is smaller than the E-module of the piezoelectric element in the support plane.
FERRITE SINTERED MAGNET
Provided is a ferrite sintered magnet including: magnetoplumbite type ferrite crystal grains; and a two-grain boundary interposed between the ferrite crystal grains. The two-grain boundary contains Ca and La, and an atomic ratio Ca/La at the two-grain boundary is 0.3 to 3.0.
Processing of non-oxide ceramics from sol-gel methods
A general procedure applied to a variety of sol-gel precursors and solvent systems for preparing and controlling homogeneous dispersions of very small particles within each other. Fine homogenous dispersions processed at elevated temperatures and controlled atmospheres make a ceramic powder to be consolidated into a component by standard commercial means: sinter, hot press, hot isostatic pressing (HIP), hot/cold extrusion, spark plasma sinter (SPS), etc.
Method of filling a substrate having a selected plurality of channels with a granular material
The method is for use with a substrate having a plurality of parallel channels extending therethrough. In the method, the steps comprise: filling a selected plurality of the channels with a granular material; and consolidating the granular material through heat. The selected plurality of channels is selected to produce a wall that separates the substrate into: a first portion having a first plurality of the parallel channels extending therethrough; and a second portion having a second plurality of the parallel channels extending therethrough.
Complex composite particles and methods
A complex composite particle is made of a coal dust and binder composite that is pyrolyzed. Constituent portions of the composite react together causing the particles to increase in density and reduce in size during pyrolyzation, yielding a particle suitable for use as a proppant or in a composite structure.
HIGH TEMPERATURE HIGH PRESSURE SEAL FOR DOWNHOLE CHEMICAL INJECTION APPLICATIONS
An injection system comprises a fluid control member and a reciprocating member; wherein the fluid control member is configured to form a carbon composite-to-metal seal with the reciprocating member in response to application of a compressive force; the carbon composite comprising carbon and a binder containing one or more of the following: SiO.sub.2; Si; B; B.sub.2O.sub.3; a filler metal; or an alloy of the filler metal, and the filler metal comprising one or more of the following: aluminum; copper; titanium; nickel; tungsten; chromium; iron; manganese; zirconium; hafnium; vanadium; niobium; molybdenum; tin; bismuth; antimony; lead; cadmium; or selenium.