A method for forming an ultra-high temperature (UHT) composite structure includes dispensing a polymeric precursor with a spinneret biased at a first DC voltage; forming a plurality of nanofibers from the polymeric precursor; receiving the plurality of nanofibers with a collector biased at a second DC voltage different than the first DC voltage; and changing a direction of movement of the plurality of nanofibers between the spinneret and the collector with a plurality of magnets having a magnetic field by adjusting the magnetic field.

A ceramic electronic component includes a multilayer chip including a multilayer structure, which includes ceramic dielectric layers and internal electrode layers that are alternately stacked, and cover layers respectively disposed on top and bottom faces of the multilayer structure in a first direction in which the dielectric layers and the internal electrode layers are alternately stacked, wherein each of the cover layers includes a relatively high porous section and a first relatively less porous section having a pore ratio less than a pore ratio of the relatively high porous section, the relatively high porous section laterally spreading and spanning an entire length of the cover layer in a second direction orthogonal to the first direction, the pore ratio of the relatively high porous section being 1% or greater, the first relatively less porous section being interposed between the relatively high porous section and the multilayer structure.

A dielectric ceramic composition having good characteristic even under high electric field intensity, and particularly good IR characteristic and high temperature accelerated lifetime. The present invention is a dielectric ceramic composition comprising, a main component comprising a perovskite type compound shown by a compositional formula (Ba1-x-ySrxCay)m(Ti1-zZrz)O3, a first sub component comprising oxides of a rare earth element, a second sub component as a sintering agent, wherein said dielectric ceramic composition is a complete solid solution particle wherein the rare earth element is solid dissolved to entire dielectric particle, or a core-shell particle having high ratio of the diffusion phase, and comprises the dielectric particle having 5 to 20 atom % of the average concentration of the rare earth element in the diffusion phase, and having uniform concentration distribution of the rare earth element in the diffusion phase.

A method of treating a preceramic material includes providing a preceramic polycarbosilane or polycarbosiloxane material that includes a moiety Si—O-M, where Si is silicon, O is oxygen and M is at least one metal that includes at least one transition metal, and thermally converting the preceramic polycarbosilane or polycarbosiloxane that includes the moiety Si—O-M material into a ceramic material.

Electronic devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a barium-strontium-titanium-tungsten-silicon oxide.

To provide a zinc oxide-based varistor that exhibits adequate characteristics without using antimony. Disclosed is a sintered body for a varistor, including zinc oxide as a main component; 0.6 to 3.0 mol % of bismuth oxide in terms of bismuth (Bi); 0.2 to 1.4 mol % of cobalt oxide in terms of cobalt (Co); 0.1 to 1.5 mol % of chrome oxide in terms of chrome (Cr); and 0.1 to 1.5 mol % of manganese oxide in terms of manganese (Mn), wherein the contents of antimony (Sb), a rare earth element and tin (Sn) are not more than a level of impurities.

[Object] To provide a sputtering target for producing an oxide semiconductor thin film having high properties, which serves as a substitute for IGZO, and a method of producing the same.

[Solving Means] In order to achieve the above-mentioned object, a sputtering target according to an embodiment of the present invention includes: an oxide sintered body including indium, tin, and germanium, in which an atom ratio of germanium with respect to a total of indium, tin, and germanium is 0.07 or more and 0.40 or less, and an atom ratio of tin with respect to the total of indium, tin, and germanium is 0.04 or more and 0.60 or less. As a result, it is possible to achieve transistor characteristics of having mobility of 10 cm.sup.2/Vs or more.

A method for preparing a boron carbide material includes: providing raw materials of a boron material, a carbon material and a rare earth oxide, wherein an element molar ratio B:C of the boron material to the carbon material is in a range of 4:1 to 4:7, and the rare earth oxide is in an amount of 5 wt % or less based on a total weight of the raw materials, mixing and milling the raw materials to obtain a mixture, compressing the mixture into a tablet form by a tablet press, and sintering the compressed mixture by a laser, wherein the laser has a laser wavelength of 980 nm, a laser power in a range of 100 to 3000 W, and a laser irradiation time of 3 to 60 s.

A method for preparing an infrared radiation ceramic material includes mixing and ball milling raw materials of Fe.sub.2O.sub.3, MnO.sub.2 and CuO in a mass ratio to obtain a mixed powder; pressing the mixed powder; adjusting laser spot, laser power and laser sintering time of a laser; irradiating or sintering by a first laser the pressed mixed powder in a crucible for a high-temperature solid-phase reaction to obtain an AB.sub.2O.sub.4 type ferrite powder; obtaining a first mixture by mixing the AB.sub.2O.sub.4 type ferrite powder and a cordierite powder in a mass ratio; adding a sintering aid and a nucleating agent for ball milling; obtaining a second mixture by mixing the first mixture and a binder for aging; pressing the second mixture; and irradiating or sintering the pressed second mixture by a second laser to obtain the infrared radiation ceramic material.

A self-lubricating flexible carbon composite seal includes an annular body formed from a flexible carbon composite.