An article includes a ceramic-based substrate and a barrier layer on the ceramic-based substrate. The barrier layer includes a matrix of barium-magnesium alumino-silicate or SiO.sub.2, a dispersion of silicon oxycarbide particles in the matrix, and a dispersion of particles, of the other of barium-magnesium alumino-silicate or SiO.sub.2, in the matrix.

A ferrite sintered magnet 100 comprises M-type ferrite crystal grains 4 having a hexagonal structure, two-crystal grain boundaries 6a formed between two of the M-type ferrite crystal grains 4, and multiple-crystal grain boundaries 6b surrounded by three or more of the M-type ferrite crystal grains 4. This ferrite sintered magnet 100 contains at least Fe, Ca, B, and Si, and contains B in an amount of 0.005 to 0.9 mass % in terms of B.sub.2O.sub.3, the two-crystal grain boundaries 6a and the multiple-crystal grain boundaries 6b contain Si and Ca, and in a cross-section parallel to a c-axis of the ferrite sintered magnet, when the number of multiple-crystal grain boundaries 6b having a maximum length of 0.49 to 5 μm per cross-sectional area of 76 μm.sup.2 is N, N is 7 or less.

A dry backfill for producing a basic molded heavy-clay refractory product, to such a product and a method for producing the same, to a lining of an industrial furnace, and to an industrial furnace.

A multilayer coil component that includes a multilayer body in which a plurality of insulating layers are stacked in a stacking direction and a coil inside the multilayer body, and outer electrodes that are on surfaces of the multilayer body and are electrically connected to the coil. The insulating layers include a spinel-structure ferrite phase and a ZnFe(BO.sub.3)O-type crystalline phase.

A multilayer coil component includes a multilayer body in which a plurality of insulating layers are stacked in a stacking direction and a coil inside, and outer electrodes on surfaces of the multilayer body and electrically connected to the coil. The insulating layers have a magnetic phase having spinel structure containing at least Fe, Ni, Zn, and Cu and a non-magnetic phase containing at least Si. When grain sizes D50 and D90 of crystal grains constituting the magnetic phase are respectively defined as equivalent-area circle diameters of 50% and 90% on a cumulative sum basis in a cumulative distribution of equivalent-area circle diameters of the crystal grains, the grain size D50 is from 50 nm to 750 nm, and the grain size D90 is from 200 nm to 1500 nm.

A member for a plasma processing device of the present disclosure is a member for a plasma processing device made of ceramics and having a shape of a cylindrical body with a through hole in an axial direction. The ceramics is mainly composed of aluminum oxide, and has a plurality of crystal grains and a grain boundary phase that is present between the crystal grains. An inner peripheral surface of the cylindrical body has an arithmetic average roughness Ra of 1 μm or more and 3 μm or less, and an arithmetic height Rmax of 30 μm or more and 130 μm or less.

Provided is a dielectric ceramic composition including a first component and a second component, wherein the first component comprises an oxide of Ca of 0.00 mol % to 35.85 mol % an oxide of Sr of 0.00 mol % to 47.12 mol %, an oxide of Ba of 0.00 mol % to 51.22 mol %, an oxide of Ti of 0.00 mol % to 17.36 mol %, an oxide of Zr of 0.00 mol % to 17.36 mol %, an oxide of Sn of 0.00 mol % to 2.60 mol %, an oxide of Nb of 0.00 mol % to 35.32 mol %, an oxide of Ta of 0.00 mol % to 35.32 mol %, and an oxide of V of 0.00 mol % to 2.65 mol %, and the second component includes at least (a) an oxide of Mn of 0.005% by mass to 3.500% by mass and (b) an oxide of Cu and/or an oxide of Ru.

A multi-layer ceramic capacitor includes: a first region including a polycrystal including, as a main component, crystal grains free from intragranular pores; a second region that includes a polycrystal including, as a main component, crystal grains including intragranular pores and includes a higher content of silicon than a content of silicon in the first region; a capacitance forming unit including ceramic layers laminated along a first direction, and internal electrodes disposed between the ceramic layers; and a protective portion including a cover that covers the capacitance forming unit and constitutes a main surface facing in the first direction, a side margin constituting a side surface facing in a second direction orthogonal to the first direction, and a ridge constituting a connection portion, the connection portion connecting the main surface and the side surface to each other. The ceramic layers include the first region. The ridge includes the second region.

A dielectric composition includes dielectric particles and first segregations. The dielectric particles each include a perovskite compound represented by ABO.sub.3 as a main component. The first segregations each include Ba, Ti, Si, Ni, and O.

A ceramic electronic device includes a multilayer structure in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked, a main component of the plurality of dielectric layers being a ceramic having a perovskite structure expressed by a general formula ABO.sub.3. At least one of crystal grains of the plurality of dielectric layers has a core-shell structure. A dispersion of atomic displacement amounts between B site atoms and oxygen atoms of a shell of the core-shell structure is larger than a dispersion of atomic displacement amounts between B site atoms and oxygen atoms of a core of the core-shell structure.