C04B2235/3891

HIGH TEMPERATURE COATING FOR SILICON NITRIDE ARTICLES
20170327937 · 2017-11-16 ·

A coated article, comprising an article having at least one surface having disposed thereupon an oxidation resistant coating comprising at least two constituents to form a composition, a first constituent comprising at least one thermal expansion component comprising at least about 10% by volume to up to about 99% by volume of the composition, a second constituent comprising at least one oxygen scavenger comprising at least about 1% by volume to up to about 90% by volume of the composition.

Composite material, electrode film and method for producing the same, electrode terminal and method for producing the same, substrate and method for producing the same, and bonding material and method for producing substrate by bonding split parts together with bonding material

Provided are a composite material that has lower volume resistivity in comparison with SiC, SiC—Si, and the like, which are materials for forming constituent elements of an EHC, has low temperature dependence of volume resistivity, and thus is able to form a constituent element of a high-performance EHC; an electrode film, an electrode terminal, and a honeycomb substrate that are constituent elements of an EHC formed with such composite material, and a method for producing them. The composite material contains MoSi.sub.2 and at least one of Si or SiC, and is a material for forming a constituent element of an electrically heated catalytic converter. An electrode film 2, an electrode terminal 3, and a substrate 1 are produced from such composite material.

POLYCRYSTALLINE DIAMOND COMPACTS HAVING PARTING COMPOUND AND METHODS OF MAKING THE SAME
20170232521 · 2017-08-17 ·

Polycrystalline diamond compacts having parting compound within the interstitial volumes are disclosed herein. In one embodiment, a polycrystalline diamond compact includes a polycrystalline diamond body having a plurality of diamond grains bonded together in diamond-to-diamond bonds, interstitial volumes positioned between the adjacent diamond grains, and a parting compound positioned in at least a portion of the interstitial volumes of the polycrystalline diamond body.

SILICON CARBIDE POROUS BODY, HONEYCOMB STRUCTURE, ELECTRICALLY HEATED CATALYST, AND METHOD OF MANUFACTURING SILICON CARBIDE POROUS BODY

A silicon carbide porous body contains β-SiC particles, Si particles, and metal silicide particles. The maximum particle diameter of the β-SIC particles is not smaller than 15 μm. The content of the Si particles is not lower than 10 mass %. The maximum particle diameter of the Si particles is not larger than 40 μm. Further, an oxide coating film having a thickness not smaller than 0.01 μm and not larger than 5 μm is provided on surfaces of the Si particles.

HONEYCOMB STRUCTURE, AND ELECTRIC HEATING SUPPORT AND EXHAUST GAS TREATMENT DEVICE EACH USING THE HONEYCOMB STRUCTURE
20220305477 · 2022-09-29 · ·

A honeycomb structure according to at least one embodiment of the present invention includes: a honeycomb structure portion having: an outer peripheral wall; and a partition wall arranged inside the outer peripheral wall to define a plurality of cells each extending from a first end surface of the honeycomb structure portion to a second end surface thereof to form a flow path; and a pair of electrode portions arranged on an outer peripheral surface of the outer peripheral wall of the honeycomb structure portion. The electrode portions are each a porous body in which particles of silicon carbide are bound by a binding material, the silicon carbide contains α-type silicon carbide and β-type silicon carbide, and the silicon carbide has a D50 in a volume-based cumulative particle size distribution of 25 μm or less.

REFRACTORY METAL SILICIDE NANOPARTICLE CERAMICS

Particles of a refractory metal or a refractory-metal compound capable of decomposing or reacting into refractory-metal nanoparticles, elemental silicon, and an organic compound having a char yield of at least 60% by weight are combined to form a precursor mixture. The mixture is heating, forming a thermoset and/or metal nanoparticles. Further heating form a composition having nanoparticles of a refractory-metal silicide and a carbonaceous matrix. The composition is not in the form of a powder

New process for manufacturing a chromium alloyed molybdenum silicide portion of a heating element
20210403386 · 2021-12-30 · ·

A process of manufacturing a chromium alloyed molybdenum silicide portion of a heating element comprising the steps of: forming a mixture of a chromium powder and a silicon powder; reacting the mixture to a reaction product in an inert atmosphere at a temperature of at least 1100° C. but not more than 1580° C.; converting the reaction product to a powder comprising CrSi.sub.2; forming a powder ceramic composition by mixing the powder comprising CrSi.sub.2 with a MoSi.sub.2 powder and optionally with an extrusion aid; forming the portion of the heating element; and sintering the portion of the heating element in a temperature of from about 1450° C. to about 1700° C.; characterized in that the chromium powder and the silicon powder are provided separately to the mixture.

METHOD FOR MANUFACTURING CERAMIC ARTICLE AND CERAMIC ARTICLE

(i) a step of disposing a powder that includes an absorber absorbing light of a wavelength included in a laser beam to be irradiated and silicon dioxide as a main component; (ii) a step of sintering or melting and solidifying the powder by irradiating the powder with a laser beam; and (iii) a step of heat-treating a shaped object formed by repeating the steps (i) and (ii) at 1470° C. or more and less than 1730° C.

CONDUCTIVE CERAMIC HONEYCOMBS WITH RESISTIVE HEATING CAPABILITY AND METHODS OF MAKING THE SAME

electrically conductive honeycomb body that includes a porous honeycomb structure including a plurality of intersecting porous walls arranged to provide a matrix of cells, the porous walls including wall surfaces that define a plurality of channels extending from an inlet end to an outlet end of the structure. The porous walls include ceramic composite material that includes at least one carbide phase and at least one silicide phase, each carbide and silicide phase including one or more metals selected from the group consisting of Si, Mo, Ti, Zr and W.

Member for semiconductor manufacturing apparatus and method for producing the same
11205584 · 2021-12-21 · ·

A method for producing a member for a semiconductor manufacturing apparatus includes (a) a step of providing an electrostatic chuck, a supporting substrate, and a metal bonding material, the electrostatic chuck being made of a ceramic and having a form of a flat plate, the supporting substrate including a composite material having a difference in linear thermal expansion coefficient at 40 to 570° C. from the ceramic of 0.2×10.sup.−6/K or less in absolute value, and (b) a step of interposing the metal bonding material between a concave face of the supporting substrate and a face of the electrostatic chuck opposite to a wafer mounting face, and thermocompression bonding the supporting substrate and the electrostatic chuck at a predetermined temperature to deform the electrostatic chuck to the shape of the concave face.