A cutting table for a cutting element, including: a diamond phase; a tungsten carbide phase; a cobalt-tungsten metallic phase; and an intermetallic phase comprising Co.sub.3WC.sub.x, where 0≤x≤1. Also disclosed is a method of manufacturing a cutting element, the method including: sintering diamond and tungsten carbide particles in the presence of Co and W to about 1520° C. or greater under pressure of about 57 kbar or greater to form a hard metal-diamond composite compact and solubilize carbon and tungsten within the compact; cooling the cutting element at about 1° C./sec or greater; and subsequent to cooling the cutting element, heat-treating the cutting element to precipitate carbon and tungsten in the compact as an intermetallic phase.

A method for making a ceramic matrix composite component includes densifying a fibrous preform of the component with a ceramic matrix to form an intermediate component; infiltrating a hole in the intermediate component with an infiltrate material comprising a solid and a metallic alloy whose reaction forms a carbide, silicide, boride or combination thereof, heating the infiltrate material to a temperature in excess of a melting point of the metallic alloy; and sequentially cooling regions of the hole starting from an interior end of the hole to the outer surface of the intermediate component to form a solidified through-thickness reinforcement element. The hole extends in a through-thickness direction and is open to an exterior surface of the intermediate component.

A multilayer electronic component includes a body including a dielectric layer and an internal electrode; and an external electrode disposed on the body and connected to the internal electrode, wherein the dielectric layer includes first and second grains, wherein the first grain has a core-shell structure including a shell having an atomic ratio of 2*Sn/(Ba+Ti+Sn) or 2*Hf/(Ba+Ti+Hf) to be 1.0% or more and 5.0% or less, and a core having an atomic ratio of 2*Sn/(Ba+Ti+Sn) and 2*Hf/(Ba+Ti+Hf) to be less than 1.0%, and the second grain has an atomic ratio of 2*Sn/(Ba+Ti+Sn) and 2*Hf/(Ba+Ti+Hf) to be less than 1.0%, and wherein an area occupied by the first grain in an entire area of the first and second grains is 28.3-82.3%.

An automated preparation method of a SiC.sub.f/SiC composite flame tube, comprising the following steps: preparing an interface layer for a SiC fiber by a chemical vapor infiltration process, and obtaining the SiC fiber with a continuous interface layer; laying a unidirectional tape on the SiC fiber with the continuous interface layer and winding the SiC fiber with the continuous interface layer to form and obtaining a preform of a net size molding according to a fiber volume and a fiber orientation obtained in a simulation calculation; and adopting a reactive melt infiltration process and the chemical vapor infiltration process successively for a densification and obtaining a high-density SiC.sub.f/SiC composite flame tube in a full intelligent way. The SiC.sub.f/SiC composite flame tube prepared by the present disclosure not only has a high temperature resistance, but also has a low thermal expansion coefficient, high thermal conductivity and high thermal shock resistance.

An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide (Y.sub.2O.sub.3), 10 to 100 ppm by weight of titanium (Ti), and the balance being aluminum nitride (AlN). Accordingly, a volume resistance value and thermal conductivity at a high temperature are improved, and the generation of impurities during a semiconductor manufacturing process can be suppressed.

Provided are 5-layered MXene materials having the formulas M.sub.5X.sub.4T.sub.x; (M′aM″b)X.sub.4T.sub.x (where a+b=5); and (M′.sub.aM″.sub.b).sub.5X.sub.4T.sub.x (where a+b=1). Also provided are related methods, compositions, and applications.

This disclosure relates to a polycrystalline cubic boron nitride, PCBN, material that includes a binder matrix material containing nitride compounds. The nitride compounds are selected from HfN, VN, and/or NbN.

A SiC powder containing 70% by mass or more of a β-SiC, wherein in a volume-based cumulative particle size distribution measured by a laser diffraction method, a D50 is 8 to 35 μm and a D10 is 5 μm or more.

A cutting element comprises a supporting substrate, and a cutting table attached to an end of the supporting substrate. The cutting table comprises inter-bonded diamond particles, and a thermally stable material within interstitial spaces between the inter-bonded diamond particles. The thermally stable material comprises a carbide precipitate having the general chemical formula, A.sub.3XZ.sub.n-1, where A comprises one or more of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U; X comprises one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P; Z comprises C; and n is greater than or equal to 0 and less than or equal to 0.75. A method of forming a cutting element, an earth-boring tool, a supporting substrate, and a method of forming a supporting substrate are also described.

This disclosure relates to a polycrystalline cubic boron nitride, PCBN, composite material comprising cubic boron nitride, cBN, particles and a binder matrix material in which the cBN particles are dispersed. The binder matrix material comprises one or more superalloys.