Provided is a dielectric composition exhibiting a high specific dielectric constant and a high resistivity even when fired in a reducing atmosphere. The dielectric composition contains a composite oxide having a composition represented by (Sr.sub.xBa.sub.1-x).sub.yNb.sub.2O.sub.5+y, the crystal system of the composite oxide is tetragonal, and y in the composition formula is smaller than 1.

A carbon nanotube (CNT) sheet containing CNTs, arranged is a randomly oriented, uniformly distributed pattern, and having a basis weight of at least 1 gsm and a relative density of less than 1.5. The CNT sheet is manufactured by applying a CNT suspension in a continuous pool over a filter material to a depth sufficient to prevent puddling of the CNT suspension upon the surface of the filter material, and drawing the dispersing liquid through the filter material to provide a uniform CNT dispersion and form the CNT sheet. The CNT sheet is useful in making CNT composite laminates and structures having utility for electro-thermal heating, electromagnetic wave absorption, lightning strike dissipation, EMI shielding, thermal interface pads, energy storage, and heat dissipation.

Provided is a sputtering target, the sputtering target containing 0.05 at % or more of Bi and having a total content of metal oxides of from 10 vol % to 60 vol %, the balance containing at least Co and Pt.

Disclosed is a plastic semiconductor material and a preparation method thereof. The semiconductor material comprises an argentite-based compound represented by the following formula (I): Ag.sub.2-δX.sub.δS.sub.1-ηY.sub.η(I), in which 0≤δ<0.5, 0≤η<0.5, X is at least one of Cu, Au, Fe, Co, Ni, Zn, Ti, or V, and Y is at least one of N, P, As, Sb, Se, Te, O, Br, Cl, I, or F. The material can withstand certain deformations, similar to organic materials, and has excellent semiconductor properties with adjustable electrical properties, thereby enabling the preparation of high-performance flexible semiconductor devices.

Provided is a sputtering target with which it is possible to form a magnetic thin film having a high coercive force Hc.

The sputtering target is a sputtering target that contains metallic Co, metallic Pt, and an oxide, wherein the sputtering target contains no metallic Cr except inevitable impurities, the oxide is B.sub.2O.sub.3 and the sputtering target comprises 10 to 50 vol % of the oxide.

Provided is a sputtering target with which it is possible to form a magnetic thin film having a high coercive force Hc. The sputtering target is a sputtering target that contains metallic Co, metallic Pt, and an oxide, wherein the sputtering target contains no metallic Cr except inevitable impurities, the oxide has B.sub.2O.sub.3, and the sputtering target comprises 10 to 50 vol % of the oxide.

Optical additive manufacturing, including laser additive manufacturing systems, apparatus and methods using polymer derived ceramic build materials. Additive manufacturing build materials are made of polymer derived ceramic including SiOC, precures, cured materials, hard cured materials, and pyrolized materials. Polymer derived ceramic build materials are mixed with and used in conjunction with other build materials.

A thin film is provided that primarily comprises titanium oxide and includes Ti, Ag and O. The thin film contains 29.6 at % or more and 34.0 at % or less of Ti, 0.003 at % or more and 7.4 at % or less of Ag, and oxygen as the remainder thereof and has a ratio of oxygen to metals, O/(2Ti+0.5Ag), of 0.97 or more. The thin film has a high refractive index and a low extinction coefficient. In addition, the thin film has superior transmittance, minimally deteriorates in reflectance, and is useful as an interference film or a protective film for an optical information recording medium. The film may also be applied to a glass substrate to provide a heat reflective film, an antireflective film, or an interference filter. A method of producing the thin film is also disclosed.

Provided is a Mn—Ta—W—Cu—O-based sputtering target including, in the component composition, Mn, Ta, W, Cu, and O. The sputtering target has a relative density of at least 90%, and includes a crystal phase of Mn.sub.4Ta.sub.2O.sub.9. Also provided is a production method for the sputtering target.

Ceramic-metallic composites are disclosed along with the equipment and processes for their manufacture. The present invention improves the densities of these composites by eliminating porosity through the use of a unique furnace system that applies vacuum and positive gas pressure during specific stages of processing. In the fabrication of Al.sub.2O.sub.3—Al composites, each process commences with a preform initially composed of at least 5% by weight silicon dioxide, and the finished product includes aluminum oxide and aluminum, and possibly other substances.