C04B2235/447

Ternary inorganic compound crystal and preparation method and application thereof

Provided is a ternary inorganic compound crystal having a molecular formula of Ca.sub.8Al.sub.12P.sub.2O.sub.31, and a preparation method thereof comprising the following steps: weighing calcium salts, aluminum salts and phosphate respectively according to the molar ratio of calcium, aluminum and phosphorus in the molecular formula Ca.sub.8Al.sub.12P.sub.2O.sub.31; calcining at 15501570 C., cooling, and grinding to obtain the ternary inorganic compound crystal. Also provided is an application of the ternary inorganic compound in gelling materials and molecular sieves, nonlinear optical crystals, and photochromic materials.

VARISTOR COMPOSITION AND MULTILAYER VARISTOR
20180099910 · 2018-04-12 ·

A varistor composition free of Sb comprising: (a) ZnO; (b) BBiZnPr glass, or BBiZnLa glass, or a mixture thereof; (c) a cobalt compound, a chromium compound, a nickel compound, a manganese compound, or mixtures thereof; (d) SnO.sub.2; and (e) an aluminum compound, a silver compound, or a mixture thereof. By adjusting the ratio between the components, the varistor composition may be made into a multilayer varistor with inner electrodes having a low concentration of noble metals at a sintering temperature less than 1200 C. The multilayer varistor made from the varistor composition has good maximum surge current, good ESD withstand ability, and low fabrication cost.

Castable refractory composition
09938193 · 2018-04-10 · ·

A castable refractory composition may include from 5% to 95% by weight of alumina, aluminosilicate, or mixtures thereof; from 0.5% to 1.5% by weight alkaline earth metal oxide and/or hydroxide, and 0.1% to 5% by weight of silica having a surface area of at least about 10 m.sup.2/g. The refractory composition may include no more than 0.5% by weight of cementitious binder. The refractory composition may release less than 25 cm.sup.3 of hydrogen gas per kilogram of castable refractory composition upon addition of water. The refractory compositions may set on addition of water.

Method for recycling coal liquefaction residue

Disclosed is a method for recycling a coal liquefaction residue. The method includes S1, drying a coal liquefaction residue and pulverizing to obtain a pulverized coal liquefaction residue; S2, subjecting the pulverized coal liquefaction residue to a solvothermal extraction in an autoclave to obtain an extract liquid and a residue; S3, distilling the extract liquid and recovering an organic solvent to obtain a solid extract.

LITHIUM STUFFED GARNET SETTER PLATES FOR SOLID ELECTROLYTE FABRICATION
20180094858 · 2018-04-05 ·

Setter plates are fabricated from Li-stuffed garnet materials having the same, or substantially similar, compositions as a garnet Li-stuffed solid electrolyte. The Li-stuffed garnet setter plates, set forth herein, reduce the evaporation of Li during a sintering treatment step and/or reduce the loss of Li caused by diffusion out of the sintering electrolyte. Li-stuffed garnet setter plates, set forth herein, maintain compositional control over the solid electrolyte during sintering when, upon heating, lithium is prone to diffuse out of the solid electrolyte.

Production method of rare earth oxysulfide, ceramic scintillator and its production method, scintillator array, and radiation detector
09896623 · 2018-02-20 · ·

A production method of rare earth oxysulfide comprising a step of mixing a rare earth compound with sulfuric acid and/or sulfate in such a proportion that sulfate ions are 0.75-1.75 mol to 1 mol of a rare earth element, thereby preparing a reaction solution to obtain a product; a step of calcining the product to obtain calcined powder; and a step of reducing the calcined powder to obtain rare earth oxysulfide.

LITHIUM STUFFED GARNET SETTER PLATES FOR SOLID ELECTROLYTE FABRICATION
20180045465 · 2018-02-15 ·

Setter plates are fabricated from Li-stuffed garnet materials having the same, or substantially similar, compositions as a garnet Li-stuffed solid electrolyte. The Li-stuffed garnet setter plates, set forth herein, reduce the evaporation of Li during a sintering treatment step and/or reduce the loss of Li caused by diffusion out of the sintering electrolyte. Li-stuffed garnet setter plates, set forth herein, maintain compositional control over the solid electrolyte during sintering when, upon heating, lithium is prone to diffuse out of the solid electrolyte.

MELTED PRODUCT WITH A HIGH ZIRCONIUM CONTENT
20180037509 · 2018-02-08 ·

A fused-cast refractory product including, as mass percentages on the basis of the oxides and for a total of 100% of the oxides: ZrO.sub.2+HfO.sub.2: remainder to 100%, with HfO.sub.25%; SiO.sub.2: 1.5% to 7.5%; Al.sub.2O.sub.3: 1.0% to 3.0%; CaO+SrO: 1.2% to 3.0%; Y.sub.2O.sub.3: 1.5% to 3.0%; Na.sub.2O+K.sub.2O: <0.15%; B.sub.2O.sub.3: <1.0%; P.sub.2O.sub.5: <0.15%; Fe.sub.2O.sub.3+TiO.sub.2: <0.55%; oxide species other than ZrO.sub.2, HfO.sub.2, SiO.sub.2, Al.sub.2O.sub.3, Na.sub.2O, K.sub.2O, B.sub.2O.sub.3, CaO, SrO, Y.sub.2O.sub.3, P.sub.2O.sub.5, Fe.sub.2O.sub.3 and TiO.sub.2: <1.5%.

DIELECTRIC COMPOSITION AND ELECTRONIC COMPONENT
20180040424 · 2018-02-08 · ·

A dielectric composition is provided. The dielectric composition includes a tungsten bronze type complex oxide expressed by a chemical formula (K.sub.1-xNa.sub.x)Sr.sub.2Nb.sub.5O.sub.15 as a main component, x satisfying 0x0.50, wherein the dielectric composition includes a secondary phase of at least one or more selected from: MgO.SiO.sub.2; BaO.2MgO.2SiO.sub.2; and 2MgO.B.sub.2O.sub.3; or the dielectric composition includes a tungsten bronze type complex oxide expressed by a chemical formula (K.sub.1-xNa.sub.x)Sr.sub.2Nb.sub.5O.sub.15 as a main component, x satisfying 0x0.40, wherein the dielectric composition includes: MgO; BaO; B.sub.2O.sub.3; SiO.sub.2; and P.sub.2O.sub.5 as a first accessory component in a total content of 2.5 mol to 20.0 mol per 100 mol of the main component.

ITO ceramic sputtering targets with reduced In2O3 contents and method of producing it

The embodiments of the invention cover a ceramic sputtering target comprising at least 85 wt. % of an (In.sub.4Sn.sub.3O.sub.12 phase, wherein the ceramic sputtering target has a density of greater than 7.0 g/cm.sup.3. A method of forming an ITO ceramic sputtering target is also described by combining 53 to 65 wt. % of In.sub.2O.sub.3 and 35 to 47 wt. % of SnO.sub.2 to form a first In.sub.2O.sub.3/SnO.sub.2 mixture; mixing and milling the In.sub.2O.sub.3/SnO.sub.2 mixture in the presence of water and a dispersing agent until a first slurry is formed, wherein the average particle size of the first slurry is between 0.3-0.7 m and wherein the specific surface area is between 4-8.5 m.sup.2/g; drying the first slurry to form a powder; heat treating the powder at 1300 to 1500 C. to form a compound having an In.sub.4Sn.sub.3O.sub.12 phase; adding additional In.sub.2O.sub.3 and SnO.sub.2 to the compound having the In.sub.4Sn.sub.3O.sub.12 phase thereby forming an InSnO-based mixture having an atomic In/Sn ratio of 1.33; forming the ITO ceramic sputtering target.