Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

Provided is a dielectric thin film including a metal oxide. The metal oxide includes bismuth, sodium, barium, and titanium, at least a part of the metal oxide is a tetragonal crystal having a perovskite structure, and a (100) plane of at least a part of the tetragonal crystal is oriented in a normal direction do of a surface of the dielectric thin film 3.

There are provided: a sintered material having an excellent wear resistance even under a high speed cutting condition; a tool using the sintered material; and a method of producing the sintered material. The sintered material includes: a first particle group including a particle having a cubic rock-salt structure represented by Al.sub.(1-x)Cr.sub.xN (formula (1)) (where x satisfies 0.2≦x≦0.8); and a second particle group including a particle of at least one first compound selected from a group consisting of oxide and oxynitride of aluminum, zirconium, yttrium, magnesium, and hafnium.

Disclosed herein are compounds, methods, and tools which comprise tungsten borides and mixed transition metal borides.

Provided are a corrosion-resistant member in which, in a case where the corrosion-resistant member is used as a member for an electrostatic chuck, an adsorption force of the electrostatic chuck can be made to be strong when an electric field is applied and a residual adsorption force of the electrostatic chuck can be made to be weak when the application of the electric field is stopped; a member for an electrostatic chuck; and a process for producing a corrosion-resistant member. The corrosion-resistant member includes an oxide which includes samarium and aluminum and has a perovskite type structure. The member for an electrostatic chuck includes the corrosion-resistant member according to the present invention. The process for producing a corrosion-resistant member according to the present invention includes: a step of mixing aluminum oxide powder and samarium oxide powder with a solvent to prepare a slurry including the aluminum oxide powder and the samarium oxide powder; a step of drying the slurry to prepare a mixed powder including the aluminum powder and the samarium oxide powder, and molding the mixed powder to prepare a green body; and a step of calcinating the green body to prepare a sintered body.

A method of producing barium titanate that includes making a slurry by dispersing barium titanate powder in a solvent such as ethanol. Then, in a high-pressure vessel, substituting supercritical fluid including carbon dioxide gas, for example, for the solvent in the slurry. Then, separating the barium titanate powder from the supercritical fluid by gasifying the supercritical fluid. Then, performing a heat treatment on the separated barium titanate powders to produce the barium titanate.

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

A method of growing a FE material thin film using physical vapor deposition by pulsed laser deposition or RF sputtering is disclosed. The method involves creating a target to be used for the pulsed laser deposition in order to create a KBNNO thin film. The resultant KBNNO thin film is able to be used in photovoltaic cells.

Disclosed is an MgO target for sputtering, which can accelerate a film formation rate even when MgO is used as a target for sputtering in the formation of an MgO film. The MgO target for sputtering, which includes MgO and an electroconductive material as main components, and in which the electroconductive material is capable of imparting orientation to a MgO film when the MgO film containing the electroconductive material is formed by a DC sputtering.

A manganese oxide contains M1, optionally M2, Mn and O. M1 is selected from the group consisting of In, Sc, Y, Dy, Ho, Er, Tm, Yb and Lu. M2 is different from M1, and M2 is selected from the group consisting of Bi, In, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. These ceramic materials are hexagonal in structure, and provide superior materials for gas separation and oxygen storage.