A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below,

0.80In/(In+Y+Ga)0.96(1),

0.02Y/(In+Y+Ga)0.10(2), and

0.02Ga/(In+Y+Ga)0.10(3), and Al element at an atomic ratio as defined in a formula (4) below,

0.005Al/(In+Y+Ga+Al)0.07(4),

where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.

The present invention relates to a method for identifying a solid solution ceramic material of a plurality of perovskite compounds which exhibits an electric field induced strain derived from a reversible phase transition, as well as a method for making such ceramic materials and ceramic materials obtainable therefrom. In particular, the present invention is directed to a method of identifying a solid solution ceramic material of at least three perovskite compounds which exhibits an electric field induced strain derived from a reversible phase transition; said method comprising the steps of: i) determining a molar ratio of at least one tetragonal perovskite compound to at least one non-tetragonal perovskite compound which, when combined to form a solid solution, provides a ceramic material comprising a major portion of a tetragonal phase having an axial ratio c/a of greater than 1.005 to 1.04; and ii) determining a molar ratio of at least one additional non-tetragonal perovskite compound to the combination of perovskite compounds from step i) at the determined molar ratio which, when combined to form a solid solution, provides a ceramic material comprising a major portion of a pseudo-cubic phase having an axial ratio c/a of from 0.995 to 1.005 and/or a rhombohedral angle of 900.5 degrees.

A sintered oxide includes an In.sub.2O.sub.3 crystal, and a crystal A whose diffraction peak is in an incidence angle (2) range defined by (A) to (F) below as measured by X-ray (CuK ray) diffraction measurement: 31.0 to 34.0 degrees . . . (A); 36.0 to 39.0 degrees . . . (B); 50.0 to 54.0 degrees . . . (C); 53.0 to 57.0 degrees . . . (D); 9.0 to 11.0 degrees . . . (E); and 19.0 to 21.0 degrees . . . (F).

Provided is a metallic impurity-free graphite material utilizing Joule heat generation with well-balanced resistances at room temperature and at high temperatures. The graphite material has a specific resistance at 25 C. (.sub.25) of 10.0 .Math.m or more and 12.0 .Math.m or less; a specific resistance at 1600 C. (.sub.1600) of 9.5 .Math.m or more and 11.0 .Math.m or less; a ratio (.sub.1600/.sub.25) of specific resistance at 1600 C. to that at 25 C. of 0.85 or more and 1.00 or less; a temperature at which the minimum specific resistance (.sub.min) appears of 500 C. or higher and 800 C. or lower; a ratio (.sub.min/.sub.25) of the minimum specific resistance to the specific resistance at 25 C. of 0.70 or more and 0.80 or less; and a bulk density of 1.69 g/cm.sup.3 or more and 1.80 g/cm.sup.3 or less.

A Zr-based composite ceramic material, a preparation method thereof and a shell or a decoration are provided. The Zr-based composite ceramic material includes a zirconia matrix and a cubic Sr.sub.xNbO.sub.3 stable phase dispersed within the zirconia matrix, where 0.7x0.95.

The present invention relates to a bismuth-based solid solution ceramic material, as well as a process for preparing the ceramic material and uses thereof, particularly in an actuator component employed, for example, in a droplet deposition apparatus. In particular, the present invention relates to a ceramic material having a general chemical formula (I): (I): x(Bi.sub.0.5Na.sub.0.5)TiO.sub.3-y(Bi.sub.0.5K.sub.0.5)TiO.sub.3-z.sub.1SrHfO.sub.3-z.sub.2SrZrO.sub.3, wherein x+y+Z.sub.1+Z.sub.2=1; y, (z.sub.1+z.sub.2)0; x0. In embodiments, the present invention also relates to a ceramic material having a general chemical formula (II): x(Bi0.5Na0.5)TiO3-y(Bi0.5K0.5)TiO3-y(Bi0.5K0.5)TiO3-ZiSrHfO3-z2SrZrO3, wherein x+y +z-i+z2=1; x, y, fa+z2)0; as well as a ceramic material of general formula (III): y(Bi.sub.0.5K.sub.0.5)TiO.sub.3-z.sub.1SrHfO.sub.3-z.sub.2SrZrO.sub.3, wherein y+z.sub.1,+z.sub.2=1; y, (z.sub.1+z.sub.2)0.

A chalcogen-containing compound of the following chemical formula which exhibits an excellent thermoelectric performance index (ZT) through an increase in power factor and a decrease in thermal conductivity, a method for preparing the same, and a thermoelectric element including the same: M.sub.yV.sub.1-ySn.sub.xSb.sub.2Te.sub.x+3, wherein V is vacancy, M is at least one alkali metal, x6, and 0<y0.4.

Provided are a corrosion-resistant member; a member for an electrostatic chuck; and a process for producing the corrosion-resistant member. The corrosion-resistant member includes an oxide which includes samarium and aluminum and has a perovskite type structure. The member for an electrostatic chuck includes the corrosion-resistant member. The process for producing a corrosion-resistant member includes: mixing aluminum oxide powder and samarium oxide powder with a solvent to prepare a slurry including the aluminum oxide powder and the samarium oxide powder; drying the slurry to prepare a mixed powder including the aluminum powder and the samarium oxide powder, and molding the mixed powder to prepare a green body; and calcinating the green body to prepare a sintered body.

Provided is a metallic impurity-free graphite material utilizing Joule heat generation with well-balanced resistances at room temperature and at high temperatures. The graphite material has a specific resistance at 25 C. (.sub.25) of 10.0 .Math.m or more and 12.0 .Math.m or less; a specific resistance at 1600 C. (.sub.1600) of 9.5 .Math.m or more and 11.0 .Math.m or less; a ratio (.sub.1600/.sub.25) of specific resistance at 1600 C. to that at 25 C. of 0.85 or more and 1.00 or less; a temperature at which the minimum specific resistance (.sub.min) appears of 500 C. or higher and 800 C. or lower; a ratio (.sub.min/.sub.25) of the minimum specific resistance to the specific resistance at 25 C. of 0.70 or more and 0.80 or less; and a bulk density of 1.69 g/cm.sup.3 or more and 1.80 g/cm.sup.3 or less.

A method for manufacturing a magnesium-based thermoelectric conversion material of the present invention includes a raw material-forming step of forming a raw material for sintering by adding silicon oxide in an amount within a range equal to or greater than 0.5 mol % and equal to or smaller than 13.0 mol % to a magnesium-based compound, and a sintering step of heating the raw material for sintering at a temperature within a range equal to or higher than 750 C. and equal to or lower than 950 C. while applying pressure equal to or higher than 10 MPa to the raw material for sintering so as to form a sintered substance.