C04B2235/786

PIEZOELECTRIC SINGLE CRYSTAL-POLYCRYSTALLINE CERAMIC COMPOSITE, PREPARATION METHOD THEREFOR, AND PIEZOELECTRIC AND DIELECTRIC APPLICATION COMPONENTS USING SAME
20230247908 · 2023-08-03 ·

Provided is a piezoelectric single crystal-polycrystal ceramic composite, a method of manufacturing the same, and piezoelectric and dielectric application components using the piezoelectric single crystal-polycrystal ceramic composite. The piezoelectric single crystal-polycrystal ceramic composite shows that complexation is carried out by the optimization of a ratio between grain size distributions of a piezoelectric single crystal and polycrystal ceramic grains, and a volume ratio of the contained piezoelectric single crystal so that mass production simultaneously with excellent piezoelectric characteristics of the piezoelectric single crystal can be realized, and the cost of production can be reduced, so the piezoelectric single crystal-polycrystal ceramic composite can be applied to piezoelectric and dielectric application components, like ultrasonic transducers, piezoelectric actuators, piezoelectric sensors, dielectric capacitors, electric field-generating transducers, and electric field and vibration-generating transducers, using the piezoelectric single crystal-polycrystal ceramic composite, and the piezoelectric single crystal-polycrystal ceramic composite can enhance piezoelectric characteristics and competitiveness in prices.

Silicon carbide/graphite composite and articles and assemblies comprising same

A silicon carbide-graphite composite is described, including (i) interior bulk graphite material and (ii) exterior silicon carbide matrix material, wherein the interior bulk graphite material and exterior silicon carbide matrix material inter-penetrate one another at an interfacial region therebetween, and wherein graphite is present in inclusions in the exterior silicon carbide matrix material. Such material may be formed by contacting a precursor graphite article with silicon monoxide (SiO) gas under chemical reaction conditions that are effective to convert an exterior portion of the precursor graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween. Such silicon carbide-graphite composite is usefully employed in applications such as implant hard masks in manufacturing solar cells or other optical, optoelectronic, photonic, semiconductor and microelectronic products, as well as in ion implantation system materials, components, and assemblies, such as beam line assemblies, beam steering lenses, ionization chamber liners, beam stops, and ion source chambers.

CRACK SELF-HEALING FUNCTIONALLY GRADIENT MATERIAL FOR CERAMIC CUTTING TOOLS AND PREPARATION METHOD THEREOF

A crack self-healing functionally gradient material for ceramic cutting tools and a preparation method thereof. The material for ceramic cutting tools has a symmetrical gradient structure, and based on the percentage by mass, components of each layer include 50%-80% of Ti(C.sub.7,N.sub.3), 25%-5% of (W.sub.7,Ti.sub.3)C and 20%-0% of TiSi.sub.2; contents of components of layers that are symmetrical relative to a central layer are the same and a thickness is symmetrically distributed; a content of Ti(C.sub.7,N.sub.3) gradually increases from the surface layer to the central layer, contents of (W.sub.7,Ti.sub.3)C and Ti Si.sub.2 gradually decrease by 5% from the surface layer to the central layer, and the contents of Ni and Mo gradually increase from the surface layer to the central layer.

Substrate for mounting a light-emitting element and circuit board for mounting a light-emitting element that includes it, and light-emitting element module
11769864 · 2023-09-26 · ·

A substrate for mounting a light-emitting element according to the present disclosure contains a crystal particle of aluminum oxide and is composed of an alumina-based ceramic that contains 97% by mass or more of Al as a value of an Al.sub.2O.sub.3 equivalent among 100% by mass of all components thereof. An average value of an equivalent circle diameter of the crystal particle is 1.1 μm or greater and 1.8 μm or less and a standard deviation of an equivalent circle diameter thereof is 0.6 μm or greater and 1.4 μm or less.

Method for making YBCO superconductor

A method of producing polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y (Y-358) whereby powders of yttrium (III) oxide, a barium (II) salt, and copper (II) oxide are pelletized, calcined at 850 to 950° C. for 8 to 16 hours, ball milled under controlled conditions, pelletized again and sintered in an oxygen atmosphere at 900 to 1000° C. for up to 72 hours. The polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y thus produced is in the form of elongated crystals having an average length of 2 to 10 μm and an average width of 1 to 2 μm, and embedded with spherical nanoparticles of yttrium deficient Y.sub.3Ba.sub.5Cu.sub.8O.sub.y having an average diameter of 5 to 20 nm. The spherical nanoparticles are present as agglomerates having flower-like morphology with an average particles size of 30 to 60 nm. The ball milled polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y prepared under controlled conditions shows significant enhancement of superconducting and flux pinning properties.

SINTERED BODY AND PRODUCTION METHOD THEREFOR

A sintered body includes zirconia, iron, cobalt and titanium, in which a total iron and cobalt content is more than 0.1 mass % and less than 3 mass % and a titanium content is more than 3 mass %.

Alumina sintered body and manufacturing method therefor
11760694 · 2023-09-19 · ·

The present invention relates to an alumina sintered body and a manufacturing method therefor; for example, the present invention relates to an alumina sintered body that is suitably utilized for a member or similar used in a plasma processing device, an etcher for semiconductor/liquid crystal display device manufacturing, a CVD device, or similar, or that is suitably utilized for a substrate or similar of a plasma-resistant member which is to be coated, as well as a manufacturing method for said alumina sintered body.

LITHIUM COMPOSITE OXIDE SINTERED BODY PLATE
20220029148 · 2022-01-27 · ·

Provided is a lithium complex oxide sintered plate for use in a positive electrode of a lithium secondary battery. The lithium complex oxide sintered plate has a structure in which a plurality of primary grains having a layered rock-salt structure are bonded, and has a porosity of 3 to 40%, a mean pore diameter of 15 μm or less, an open porosity of 70% or more, and a thickness of 15 to 200 μm. The plurality of primary grains has a primary grain diameter, i.e., a mean diameter of the primary grains, of 20 μm or less and a mean tilt angle of more than 0° to 30° or less. The mean tilt angle is a mean value of the angles defined by the (003) planes of the primary grains and the plate face of the lithium complex oxide sintered plate.

BATCH MIXTURES CONTAINING PRE-REACTED INORGANIC PARTICLES AND METHODS OF MANUFACTURE OF CERAMIC BODIES THEREFROM

A batch mixture comprising pre-reacted pseudobrookite particles consisting essentially of aluminum titanate and magnesium dititanate, a reactive alumina source, a reactive titania source, and a reactive silica source. Other batch mixtures and methods of manufacturing honeycomb extrudates and porous honeycomb bodies using the batch mixture are disclosed.

SILICON CARBIDE/GRAPHITE COMPOSITE AND ARTICLES AND ASSEMBLIES COMPRISING SAME

A silicon carbide-graphite composite is described, including (i) interior bulk graphite material and (ii) exterior silicon carbide matrix material, wherein the interior bulk graphite material and exterior silicon carbide matrix material inter-penetrate one another at an interfacial region therebetween, and wherein graphite is present in inclusions in the exterior silicon carbide matrix material. Such material may be formed by contacting a precursor graphite article with silicon monoxide (SiO) gas under chemical reaction conditions that are effective to convert an exterior portion of the precursor graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween. Such silicon carbide-graphite composite is usefully employed in applications such as implant hard masks in manufacturing solar cells or other optical, optoelectronic, photonic, semiconductor and microelectronic products, as well as in ion implantation system materials, components, and assemblies, such as beam line assemblies, beam steering lenses, ionization chamber liners, beam stops, and ion source chambers.