Patent classifications
C04B2235/786
OXIDE SINTERED BODY AND SPUTTERING TARGET
An oxide sintered body has metal elements of In, Ga, Zn, and Sn and contains Ga.sub.2In.sub.6Sn.sub.2O.sub.16, ZnGa.sub.2O.sub.4, and InGaZnO.sub.4. The contents of In, Ga, Zn, and Sn in the oxide sintered body satisfy the relations [Ga]37 atomic %, [Sn]15 atomic %, and [Ga]/([In]+[Zn])0.7, where [In], [Ga], [Zn], and [Sn] represent ratios (atomic %) of In, Ga, Zn, and Sn with respect to all metal elements contained in the oxide sintered body, respectively.
Polycrystalline Ceramic Solid and Method for Producing a Polycrystalline Ceramic Solid
A polycrystalline ceramic solid and a method for producing a polycrystalline ceramic solid are disclosed. In an embodiment a polycrystalline ceramic solid includes a main phase with a composition of the general formula: (1-y)Pb.sub.a(Mg.sub.bNb.sub.c)O.sub.3-e+yPb.sub.aTi.sub.dO.sub.3 with 0.055y0.065, 0.95a1.02, 0.29b0.36, 0.63c0.69, 0.9d1.1, and 0e0.1, and optionally one or more secondary phases, wherein, in each section through the solid, a proportion of the secondary phases relative to any given cross-sectional area through the solid is less than or equal to 0.5 percent, or wherein the solid is free of the secondary phases.
ABRASIVE ARTICLE INCLUDING SHAPED ABRASIVE PARTICLES
- Todd M. COTTER ,
- Francois WAGNER ,
- Rene G. DEMERS ,
- Richard J. Klok ,
- Alexandra Marazano ,
- Adam D. Lior ,
- James A. SALVATORE ,
- Sujatha K. IYENGAR ,
- David F. Louapre ,
- Sidath S. Wijesooriya ,
- Ronald Christopher MOTTA ,
- Gary A. GUERTIN ,
- Michael D. KAVANAUGH ,
- Doruk O. Yener ,
- Jennifer H. Czerepinski ,
- Jun JIA ,
- Frederic JOSSEAUX ,
- Ralph Bauer ,
- Frank J. Csillag ,
- Yang ZHONG ,
- James P. STEWART ,
- Mark P. DOMBROWSKI ,
- Sandhya JAYARAMAN RUKMANI ,
- Amandine Martin ,
- Stephen E. Fox ,
- Nilanjan Sarangi ,
- Dean S. MATSUMOTO
Various shaped abrasive particles are disclosed. Each shaped abrasive particle includes a body having at least one major surface and a side surface extending from the major surface.
Aluminum-silicon-carbide composite and method of manufacturing same
Provided are an aluminum-silicon-carbide composite having high thermal conductivity, low thermal expansion, and low specific gravity and a method for producing the composite. Provided is an aluminum-silicon-carbide composite formed by impregnating a porous silicon carbide molded body with an aluminum alloy. The ratio of silicon carbide in the composite is 60 vol % or more, and the composite contains 60-75 mass % of silicon carbide having a particle diameter of 80 m or more and 800 m or less, 20-30 mass % of silicon carbide having a particle diameter of 8 m or more and less than 80 m, and 5-10 mass % of silicon carbide having a particle diameter of less than 8 m.
Shower plate, semiconductor manufacturing apparatus, and method for manufacturing shower plate
A shower plate according to the present disclosure includes a ceramic sintered body, the ceramic sintered body comprising a first surface, a second surface facing the first surface, and a through hole positioned between the first surface and the second surface. An inner surface of the through hole includes a protruding crystal grain which protrudes more than an exposed part of a grain boundary phase existing between crystal grains. In addition, a semiconductor manufacturing apparatus according to the present disclosure includes the shower plate mentioned above.
Polycrystalline SiC substrate and method for manufacturing same
A support substrate 2 is a polycrystalline SiC substrate formed of polycrystalline SiC. Assuming that one of the two sides of the polycrystalline SiC substrate is a first side and that the other side is a second side, a substrate grain size change rate of the polycrystalline SiC substrate, which is a value obtained by dividing a difference between the average value of crystal grain sizes of the polycrystalline SiC on the first side and the average value of crystal grain sizes of the polycrystalline SiC on the second side by a thickness of the polycrystalline SiC substrate, is 0.43% or less. A radius of curvature of the polycrystalline SiC substrate is 142 m or more.
MnZn ferrite core and its production method
A method for producing a MnZn ferrite core used at a frequency of 1 MHz or more and an exciting magnetic flux density of 75 mT or less, the MnZn ferrite comprising 53-56% by mol of Fe (calculated as Fe.sub.2O.sub.3), and 3-9% by mol of Zn (calculated as ZnO), the balance being Mn (calculated as MnO), as main components, and 0.05-0.4 parts by mass of Co (calculated as Co.sub.3O.sub.4) as a sub-component, per 100 parts by mass in total of the main components (calculated as the oxides); comprising a step of molding a raw material powder for the MnZn ferrite to obtain a green body; a step of sintering the green body and cooling it to a temperature of lower than 150 C. to obtain a sintered body of MnZn ferrite; and a step of conducting a heat treatment comprising heating the sintered body of MnZn ferrite to a temperature meeting Condition 1 of 200 C. or higher, and Condition 2 of (Tc90) C. to (Tc+100) C., wherein Tc is a Curie temperature ( C.) calculated from the percentages by mol of Fe.sub.2O.sub.3 and ZnO contained in the main components of the MnZn ferrite, keeping the sintered body at the above temperature for a predetermined period of time, and then cooling the sintered body from the keeping temperature at a speed of 50 C./hour or less.
Method for producing alumina sintered body
A method for producing an alumina sintered body, including: a step of applying an alkaline earth metal compound onto a surface of an alumina raw material which is an unsintered alumina compact or an alumina sintered body; and a step of subjecting the alumina raw material to which the alkaline earth metal compound has been applied to heat treatment at a temperature of 1200 C. or more for 5 minutes or more and 300 minutes or less.
Compositions and methods for thermoelectric ceramics
In one aspect, the disclosure relates to thermoelectric ceramic oxide compositions comprising a CaMnO.sub.3 ceramic. In a further aspect, the disclosed thermoelectric ceramic oxide compositions can dramatically increase the energy conversion efficiency of thermoelectric through a combination of modifying the chemistry of precursor materials, and simultaneously introducing a metal oxide liquid phase during sintering. In a further aspect, the present disclosure pertains to thermoelectric ceramic oxide compositions comprising a metal doped CaMnO.sub.3 having with a metal oxide grain boundary phase; wherein the metal is selected from group 13, group 14, group 15, group 16, or a rare earth element. In a still further aspect, the disclosure relates to methods for making the thermoelectric ceramic oxide materials. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.
THERMALLY CONDUCTIVE COMPOSITE DIELECTRIC MATERIALS
Composites with high thermal conductivities and high loadings of hexagonal boron nitride particles in an organic polymer matrix are provided. Also provided are thermally conductive, electrically insulating coatings for magnet wires made from the composites and thermally conductive, electrically insulating infills for windings made from the composites.