A method for forming an optical window. In one example, the method includes depositing a layer of eutectic bonding material onto a first surface of a first section of window material, positioning a second surface of a second section of window material onto the layer of eutectic bonding material such that the first surface is disposed opposite the second surface, and heating the eutectic bonding material to a temperature above a eutectic temperature of the eutectic bonding material and below a melting temperature of the window material for a predetermined length of time to form an optical window. The window material of the first section and the second section may be transparent to infrared radiation and comprise aluminum.

A bonded ceramic component which is resistant to reactive halogen-containing plasmas, said component comprising ceramic portions which are bonded together by a bonding material which includes an oxyfluoride glass-ceramic-comprising transition area between interfaces of the ceramic portions, where the transition area includes from at least 0.1 volume % amorphous phase up to about 50 volume % amorphous phase.

A superhard polycrystalline construction (30) comprises a first region (34) comprising a body of thermally stable polycrystalline superhard material having an exposed surface forming a working surface (4), and a peripheral side edge (6), a second region (32) forming a substrate to the first region, and a third region (36) at least partially interposed between the first and second regions wherein the third region comprises a material more acid resistant than polycrystalline diamond material having a binder-catalyst phase comprising cobalt, and/or more acid resistant than cemented carbide material.

A sintered body comprises a first region which comprises a first material having a first effective coefficient of thermal expansion .sub.1, a second region which comprises a second material having a second effective coefficient of thermal expansion .sub.2, a transition region between the first region and the second region in which the effective coefficient of thermal expansion changes from the first effective coefficient of thermal expansion to the second effective coefficient of thermal expansion. The transition region has a sequence of layers with a mixture of at least the first material and the second material, with the mixing ratio of the layers varying in order to achieve a stepwise, in particular monotonic, change in the coefficient of thermal expansion.

To provide a power-module substrate and a manufacturing method thereof in which small voids are reduced at a bonded part and separation can be prevented. Bonding a metal plate of aluminum or aluminum alloy to at least one surface of a ceramic substrate by brazing, when a cross section of the metal plate is observed by a scanning electron microscope in a field of 3000 magnifications in a depth extent of 5 m from a bonded interface between the metal plate and the ceramic substrate in a width area of 200 m from a side edge of the metal plate, residual-continuous oxide existing continuously by 2 m or more along the bonded interface has total length of 70% or less with respect to a length of the field.

This invention relates to an assemblage of a semiconductor processing apparatus comprising a first aluminum nitride (AlN) component and a second aluminum nitride component, wherein the first and second aluminum nitride components are connected by a joint, said joint comprising a composite glass-ceramic comprising Y.sub.2O.sub.3Al.sub.2O.sub.3SiO.sub.2 (YAS) glass; and at least one of crystalline aluminosilicate and aluminum nitride.

A method for fabricating a biocompatible hermetic housing including electrical feedthroughs, the method comprises providing a ceramic sheet having an upper surface and a lower surface, forming at least one via hole in said ceramic sheet extending from said upper surface to said lower surface, inserting a conductive thick film paste into said via hole, laminating the ceramic sheet with paste filled via hole between an upper ceramic sheet and a lower ceramic sheet to form a laminated ceramic substrate, firing the laminated ceramic substrate to a temperature to sinter the laminated ceramic substrate and cause the paste filled via hole to form metalized via and cause the laminated ceramic substrate to form a hermetic seal around said metalized via, and removing the upper ceramic sheet and the lower ceramic sheet material from the fired laminated ceramic substrate to expose an upper and a lower surface of the metalized via.

A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising: a) a ceramic insulating substrate; and, b) a white corrosion-resistant non-porous outer layer associated with the ceramic insulating substrate, the white corrosion-resistant non-porous outer layer having a thickness of at least 50 m, a porosity of at most 1%, and a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer; and, c) an L* value of at least 90 as measured on a planar surface of the white corrosion-resistant non-porous outer layer. Methods of making are also disclosed.

A method for fabricating a biocompatible hermetic housing including electrical feedthroughs, the method comprises providing a ceramic sheet having an upper surface and a lower surface, forming at least one via hole in said ceramic sheet extending from said upper surface to said lower surface, inserting a conductive thick film paste into said via hole, laminating the ceramic sheet with paste filled via hole between an upper ceramic sheet and a lower ceramic sheet to form a laminated ceramic substrate, firing the laminated ceramic substrate to a temperature to sinter the laminated ceramic substrate and cause the paste filled via hole to form metalized via and cause the laminated ceramic substrate to form a hermetic seal around said metalized via, and removing the upper ceramic sheet and the lower ceramic sheet material from the fired laminated ceramic substrate to expose an upper and a lower surface of the metalized via.

A handle substrate of a composite substrate for a semiconductor is provided. The handle substrate is composed of polycrystalline alumina. The handle substrate includes an outer peripheral edge part with an average grain size of 20 to 55 m and a central part with an average grain size of 10 to 50 m. The average grain size of the outer peripheral edge part is 1.1 times or more and 3.0 times or less of that of the central part of the handle substrate.