C04B2237/128

Methods of fabricating a polycrystalline diamond compact

Embodiments relate to polycrystalline diamond compacts (PDCs) and methods of manufacturing such PDCs in which an at least partially leached polycrystalline diamond (PCD) table is infiltrated with a low viscosity cobalt-based alloy infiltrant. In an embodiment, a method includes forming a PCD table in the presence of a metal-solvent catalyst in a first high-pressure/high-temperature (HPHT) process. The method includes at least partially leaching the PCD table to remove at least a portion of the metal-solvent catalyst therefrom to form an at least partially leached PCD table. The method includes subjecting the at least partially leached PCD table and a substrate to a second HPHT process effective to at least partially infiltrate the at least partially leached PCD table with a cobalt-based alloy infiltrant having a composition at or near a eutectic composition of the cobalt-based alloy infiltrant.

CERAMIC/ALUMINUM JOINED BODY, INSULATING CIRCUIT BOARD, POWER MODULE, LED MODULE, AND THERMOELECTRIC MODULE
20180346387 · 2018-12-06 ·

A joined body according to the invention is a ceramic/aluminum joined body including: a ceramic member; and an aluminum member made of aluminum or an aluminum alloy, in which the ceramic member and the aluminum member are joined to each other, the ceramic member is formed of silicon nitride containing magnesium, and a joining layer in which magnesium is contained in an aluminum-silicon-oxygen-nitrogen compound is formed at a joining interface between the ceramic member and the aluminum member.

Gas turbine engine CMC airfoil assembly
10125620 · 2018-11-13 · ·

A gas turbine engine airfoil assembly includes an airfoil and an attachment structure respectively bonded to opposing sides of a platform. At least one of the airfoil, the platform and the attachment structure are constructed from a ceramic matrix composite.

METHOD FOR JOINING SILICON CARBIDE COMPONENTS TO ONE ANOTHER

A method for fabricating assemblies that includes providing a first component that further includes silicon carbide and that has an upper portion and a tapered lower portion; providing a second component that further includes silicon carbide and that has an upper portion that is adapted to receive the tapered lower portion of the first component; providing a predetermined amount of multiphase AlSi braze foil; grinding the AlSi braze foil into a powder; mixing a predetermined amount of braze paste binder with the AlSi powder to form a slurry; uniformly applying the slurry to the tapered lower portion of the first component; uniformly applying the slurry to the upper portion of the second component and inserting the tapered lower portion of the first component into the upper portion of the second component; and heating the applied slurry to a temperature of 725 C. to 1450 C. for a predetermined period of time.

HEAT-SINK-ATTACHED POWER-MODULE SUBSTRATE AND POWER MODULE
20180301391 · 2018-10-18 ·

Provided is a heat-sink-attached power-module substrate, in which a metal layer and first layers are formed from aluminum sheets having a purity of 99.99 mass % or greater and a heat sink and second layers are formed from aluminum sheets having a purity lower than that of the metal layer and the first layers: when a thickness is t1 (mm), a joined-surface area is A1 (mm2), yield strength at 25 C. is 11 (N/mm2), yield strength at 200 C. is 12 (N/mm2) in the second layers; a thickness is t2 (mm), a joined-surface area is A2 (mm2), yield strength at 25 C. is 21 (N/mm2), and yield strength at 200 C. is 22 (N/mm2) in the heat sink.

Method for joining ceramic to metal, and sealing structure thereof

A method for joining a metal component to a ceramic component is presented. The method includes disposing a metallic barrier layer on a metallized portion of the ceramic component, and joining the metal component to the metallized portion of the ceramic component through the metallic barrier layer. The metallic barrier layer comprises nickel and a melting point depressant. The metallic barrier layer is disposed by a screen printing process, followed by sintering the layer at a temperature less than about 1000 degrees Celsius. A sealing structure including a joint between a ceramic component and a metal component is also presented.

Power-module substrate unit and power module

A power-module substrate unit having at least one power-module substrate including one ceramic substrate, a circuit layer formed on one surface of the ceramic substrate, and a metal layer formed on another surface of the ceramic substrate, and a heat sink on which the metal layer of the power-module substrate is bonded, in which the metal layer is made of an aluminum plate having purity of 99.99 mass % or higher; the heat sink is made of an aluminum plate having purity of 99.90 mass % or lower; and the circuit layer has a stacking structure of a first layer made of an aluminum plate having the purity of 99.99 mass % or higher and being bonded to the ceramic substrate and a second layer made of the aluminum plate having the purity lower than 99.90 mass % and being bonded on a surface of the first layer.

Manufacturing method of power-module substrate
10057993 · 2018-08-21 · ·

A manufacturing method of power-module substrate (10), the power-module substrate (10) being obtained by joining a circuit layer (12) made of copper to one surface of a ceramic substrate (11) and joining a heat-radiation layer (13) made of aluminum to the other surface of the ceramic substrate (11), including: a circuit layer bonding step in which the circuit layer (12) is brazed on the ceramic substrate (11), a surface treatment step after the circuit layer bonding step in which a thickness of an oxide film on the other surface of the ceramic substrate (11) is made 3.2 nm or less at least at a peripheral part of an intended bonding area between the ceramic substrate (11) and the heat-radiation layer (13), and a heat-radiation layer bonding step in which the heat-radiation layer (13) is brazed on the other surface of the ceramic substrate (11) after the surface treatment step.

Semiconductor processing equipment with high temperature resistant nickel alloy joints and methods for making same

A method for the joining of ceramic pieces includes applying a layer of titanium on a first ceramic piece and applying a layer of titanium on a second ceramic piece; applying a layer of nickel on each of the layers of titanium on the first ceramic piece and the second ceramic piece; applying a layer of nickel phosphorous to each of the layers of nickel on the first ceramic piece and the second ceramic piece; assembling the first ceramic piece and the second ceramic piece with the layers of titanium, nickel, and nickel phosphorous therebetween; pressing the layer of nickel phosphorous of the first ceramic piece against the layer of nickel phosphorous of the second ceramic piece; heating the first ceramic piece and the second ceramic piece to a joining temperature in a vacuum; and cooling the first ceramic piece and the second ceramic piece. A hermetic seal is formed between the first ceramic piece and the second ceramic piece.

Heat-sink-attached power module substrate, heat-sink-attached power module, and method for producing heat-sink-attached power module substrate

A heat-sink-attached-power module substrate (1) has a configuration such that either one of a metal layer (13) and a heat sink (31) is composed of aluminum or an aluminum alloy, and the other one of them is composed of copper or a copper alloy, the metal layer (13) and the heat sink (31) are bonded together by solid phase diffusion bonding, an intermetallic compound layer formed of copper and aluminum is formed in a bonding interface between the metal layer (13) and the heat sink (31), and an oxide is dispersed in an interface between the intermetallic compound layer and either one of the metal layer (13) composed of copper or a copper alloy and heat sink (31) composed of copper or a copper alloy in a layered form along the interface.